Authors:
Galiev, GB
Mokerov, VG
Saraikin, VV
Slepnev, YV
Shagimuratov, GI
Imamov, RM
Pashaev, EM
Citation: Gb. Galiev et al., Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates, TECH PHYS, 46(4), 2001, pp. 411-416
Authors:
Afanas'ev, AM
Chuev, MA
Imamov, RM
Lomov, AA
Citation: Am. Afanas'Ev et al., Structure of the interfaces of the InxGa1-xAs quantum well from X-ray diffraction data, CRYSTALLO R, 46(5), 2001, pp. 707-716
Citation: Vv. Klechkovskaya et Rm. Imamov, Electron diffraction structure analysis - from Vainshtein to our days, CRYSTALLO R, 46(4), 2001, pp. 534-549
Authors:
Evstigneev, SV
Imamov, RM
Lomov, AA
Sadof'ev, YG
Khabarov, YV
Chuev, MA
Shipitsin, DS
Citation: Sv. Evstigneev et al., Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells, SEMICONDUCT, 34(6), 2000, pp. 693-699
Authors:
Afanas'ev, AM
Chuev, MA
Imamov, RM
Lomov, AA
Citation: Am. Afanas'Ev et al., Structural characteristics of multicomponent GaAs-InxGa1-xAs system from double-crystal X-ray diffractometry data, CRYSTALLO R, 45(4), 2000, pp. 655-660
Citation: Gb. Galiev et al., Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations, TECH PHYS, 44(7), 1999, pp. 801-803