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Results: 1-9 |
Results: 9
Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates
Authors: Galiev, GB Mokerov, VG Saraikin, VV Slepnev, YV Shagimuratov, GI Imamov, RM Pashaev, EM
Citation: Gb. Galiev et al., Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates, TECH PHYS, 46(4), 2001, pp. 411-416
Structure of the interfaces of the InxGa1-xAs quantum well from X-ray diffraction data
Authors: Afanas'ev, AM Chuev, MA Imamov, RM Lomov, AA
Citation: Am. Afanas'Ev et al., Structure of the interfaces of the InxGa1-xAs quantum well from X-ray diffraction data, CRYSTALLO R, 46(5), 2001, pp. 707-716
Electron diffraction structure analysis - from Vainshtein to our days
Authors: Klechkovskaya, VV Imamov, RM
Citation: Vv. Klechkovskaya et Rm. Imamov, Electron diffraction structure analysis - from Vainshtein to our days, CRYSTALLO R, 46(4), 2001, pp. 534-549
Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells
Authors: Evstigneev, SV Imamov, RM Lomov, AA Sadof'ev, YG Khabarov, YV Chuev, MA Shipitsin, DS
Citation: Sv. Evstigneev et al., Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells, SEMICONDUCT, 34(6), 2000, pp. 693-699
Structural characteristics of multicomponent GaAs-InxGa1-xAs system from double-crystal X-ray diffractometry data
Authors: Afanas'ev, AM Chuev, MA Imamov, RM Lomov, AA
Citation: Am. Afanas'Ev et al., Structural characteristics of multicomponent GaAs-InxGa1-xAs system from double-crystal X-ray diffractometry data, CRYSTALLO R, 45(4), 2000, pp. 655-660
Properties of (111)A and (111)B GaAs molecular-beam epitaxy
Authors: Galiev, GB Mokerov, VG Volkov, VY Imamov, RM Slepnev, YV Khabarov, YV
Citation: Gb. Galiev et al., Properties of (111)A and (111)B GaAs molecular-beam epitaxy, J COMMUN T, 44(11), 1999, pp. 1256-1261
Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations
Authors: Galiev, GB Mokerov, VG Slepnev, YV Khabarov, YV Lomov, AA Imamov, RM
Citation: Gb. Galiev et al., Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations, TECH PHYS, 44(7), 1999, pp. 801-803
Asymptotic diffuse X-ray scattering by silicon-doped GaAs single crystals
Authors: Lomov, AA Bushuev, VA Imamov, RM Bocchi, C Franzosi, P
Citation: Aa. Lomov et al., Asymptotic diffuse X-ray scattering by silicon-doped GaAs single crystals, CRYSTALLO R, 44(4), 1999, pp. 626-634
Determination of crystal structures by electron diffraction structure analysis
Authors: Man, LI Imamov, RM
Citation: Li. Man et Rm. Imamov, Determination of crystal structures by electron diffraction structure analysis, CRYSTALLO R, 43(6), 1998, pp. 940-944
Risultati: 1-9 |