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Results: 1-25/31
Authors:
Mouillet, R
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: R. Mouillet et al., Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistorgrown on low-temperature AlN interlayer, JPN J A P 2, 40(5B), 2001, pp. L498-L501
Authors:
Terao, S
Iwaya, M
Nakamura, R
Kamiyama, S
Amano, H
Akasaki, I
Citation: S. Terao et al., Fracture of AlxGa1-xN/GaN heterostructure - Compositional and impurity dependence, JPN J A P 2, 40(3A), 2001, pp. L195-L197
Authors:
Monemar, B
Paskov, PP
Pozina, G
Paskova, T
Bergman, JP
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Authors:
Pozina, G
Bergman, JP
Monemar, B
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport, J CRYST GR, 230(3-4), 2001, pp. 473-476
Authors:
Kamiyama, S
Iwaya, M
Hayashi, N
Takeuchi, T
Amano, H
Akasaki, I
Watanabe, S
Kaneko, Y
Yamada, N
Citation: S. Kamiyama et al., Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure, J CRYST GR, 223(1-2), 2001, pp. 83-91
Authors:
Dragoe, N
Shimotani, H
Wang, J
Iwaya, M
de Bettencourt-Dias, A
Balch, AL
Kitazawa, K
Citation: N. Dragoe et al., First unsymmetrical bisfullerene, C-121: Evidence for the presence of bothhomofullerene and methanofullerene cages in one molecule, J AM CHEM S, 123(7), 2001, pp. 1294-1301
Authors:
Iwaya, M
Kasai, S
Okada, N
Nakamura, J
Hasegawa, H
Citation: M. Iwaya et al., Chemical and electrochemical nanofabrication processes for Schottky in-plane gate GaAs single and coupled quantum wire transistors, JPN J A P 1, 39(7B), 2000, pp. 4651-4652
Authors:
Kamiyama, S
Iwaya, M
Amano, H
Akasaki, I
Citation: S. Kamiyama et al., Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer, JPN J A P 1, 39(2A), 2000, pp. 390-392
Authors:
Hayashi, N
Kamiyama, S
Takeuchi, T
Iwaya, M
Amano, H
Akasaki, I
Watanabe, S
Kaneko, Y
Yamada, N
Citation: N. Hayashi et al., Electrical conductivity of low-temperature-deposited Al0.1Ga0.9N interlayer, JPN J A P 1, 39(12A), 2000, pp. 6493-6495
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes, JPN J A P 2, 39(5A), 2000, pp. L387-L389
Authors:
Dragoe, N
Iwaya, M
Shimotani, H
Kitazawa, K
Citation: N. Dragoe et al., The synthesis and characterization of 1 '-bromo-1,2-methano[60]-fullerene, J CHEM S P2, (9), 2000, pp. 1885-1888
Authors:
Iwaya, M
Terao, S
Hayashi, N
Kashima, T
Detchprohm, T
Amano, H
Akasaki, I
Hirano, A
Pernot, C
Citation: M. Iwaya et al., High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector, MRS I J N S, 5, 2000, pp. NIL_40-NIL_45
Authors:
Benamara, M
Liliental-Weber, Z
Mazur, JH
Swider, W
Washburn, J
Iwaya, M
Akasaki, I
Amano, H
Citation: M. Benamara et al., The role of the multi buffer layer technique on the structural quality of GaN, MRS I J N S, 5, 2000, pp. NIL_341-NIL_346
Authors:
Xiao, LX
Ozawa, M
Iwaya, M
Wang, J
Shimotani, H
Dragoe, N
Tanibayashi, S
Kitazawa, K
Citation: Lx. Xiao et al., Synthesis and electrochemical behavior of regioisomeric bismethanofullerene derivatives, FUL SCI TEC, 8(1-2), 2000, pp. 77-88
Authors:
Sato, T
Iwaya, M
Isomura, K
Ukai, T
Kamiyama, S
Amano, H
Akasaki, I
Citation: T. Sato et al., Theoretical analysis of optical transverse-mode control on GaN-based laserdiodes, IEICE TR EL, E83C(4), 2000, pp. 573-578
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, YW
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, YS
Yamada, N
Citation: T. Takeuchi et al., Nitride-based laser diodes using thick n-AlGaN layers, J ELEC MAT, 29(3), 2000, pp. 302-305
Authors:
Nitta, S
Kashima, T
Nakamura, R
Iwaya, M
Amano, H
Akasaki, I
Citation: S. Nitta et al., Mass transport of GaN and reduction of threading dislocations, SURF REV L, 7(5-6), 2000, pp. 561-564
Authors:
Iwaya, M
Terao, S
Hayashi, N
Kashima, T
Amano, H
Akasaki, I
Citation: M. Iwaya et al., Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer, APPL SURF S, 159, 2000, pp. 405-413
Authors:
Nonoyama, N
Iwaya, M
Suzuki, H
Citation: N. Nonoyama et al., Mechanistic duality of the side-chain substitution in electrophilic aromatic nitration. Unexpected large difference in deuterium isotope effect k(H)/k(D) between the side-chain nitration and nitrooxylation of deuterated p-xylenes, TETRAHEDR L, 41(2), 2000, pp. 229-233
Authors:
Pozina, G
Bergman, JP
Monemar, B
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport, APPL PHYS L, 77(11), 2000, pp. 1638-1640
Authors:
Oka, H
Iwaya, M
Harada, K
Suzuki, M
Ito, Y
Citation: H. Oka et al., Recycling foam countercurrent chromatography, ANALYT CHEM, 72(7), 2000, pp. 1490-1494
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Low-intensity ultraviolet photodetectors based on AlGaN, JPN J A P 2, 38(5A), 1999, pp. L487-L489
Authors:
Kashima, T
Nakamura, R
Iwaya, M
Katoh, H
Yamaguchi, S
Amano, H
Akasaki, I
Citation: T. Kashima et al., Microscopic investigation of Al0.43Ga0.57N on sapphire, JPN J A P 2, 38(12B), 1999, pp. L1515-L1518
Authors:
Amano, H
Iwaya, M
Katsuragawa, M
Takeuchi, T
Kato, H
Akasaki, I
Citation: H. Amano et al., Growth of GaN on highly mismatched substrate and its application to novel devices, DIAM RELAT, 8(2-5), 1999, pp. 302-304
Authors:
Amano, H
Iwaya, M
Hayashi, N
Kashima, T
Nitta, S
Wetzel, C
Akasaki, I
Citation: H. Amano et al., Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer, PHYS ST S-B, 216(1), 1999, pp. 683-689