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Results: 1-25/113
Authors:
JOYCE BA
JONES TS
BELK JG
Citation: Ba. Joyce et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SCANNING-TUNNELING-MICROSCOPY STUDY OF INAS GROWTH ON THE 3 LOW-INDEX ORIENTATIONS OF GAAS - 2-DIMENSIONAL VERSUS 3-DIMENSIONAL GROWTH AND STRAIN RELAXATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2373-2380
Authors:
JOYCE BA
ZHANG J
TAYLOR AG
LEES AK
Citation: Ba. Joyce et al., A REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION-REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY OF SILICON GROWTH DYNAMICS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SILANES, Surface review and letters, 5(3-4), 1998, pp. 761-767
Authors:
JOYCE BA
VVEDENSKY DD
AVERY AR
BELK JG
DOBBS HT
JONES TS
Citation: Ba. Joyce et al., NUCLEATION MECHANISMS DURING MBE GROWTH OF LATTICE-MATCHED AND STRAINED III-V COMPOUND FILMS, Applied surface science, 132, 1998, pp. 357-366
Authors:
YAMAGUCHI H
SUDIJONO JL
JOYCE BA
JONES TS
GATZKE C
STRADLING RA
Citation: H. Yamaguchi et al., THICKNESS-DEPENDENT ELECTRON ACCUMULATION IN INAS THIN-FILMS ON GAAS(111)A - A SCANNING-TUNNELING-SPECTROSCOPY STUDY, Physical review. B, Condensed matter, 58(8), 1998, pp. 4219-4222
Authors:
SIVERNS PD
MALIK S
MCPHERSON G
CHILDS D
ROBERTS C
MURRAY R
JOYCE BA
Citation: Pd. Siverns et al., SCANNING TRANSMISSION-ELECTRON MICROSCOPY STUDY OF INAS GAAS QUANTUM DOTS/, Physical review. B, Condensed matter, 58(16), 1998, pp. 10127-10130
Authors:
BELK JG
PASHLEY DW
MCCONVILLE CF
JOYCE BA
JONES TS
Citation: Jg. Belk et al., SURFACE-MORPHOLOGY DURING STRAIN RELAXATION IN THE GROWTH OF INAS ON GAAS(110), Surface science, 410(1), 1998, pp. 82-98
Authors:
TEJEDOR P
ALLEGRETTI FE
SMILAUER P
JOYCE BA
Citation: P. Tejedor et al., TEMPERATURE-DEPENDENT UNSTABLE HOMOEPITAXY ON VICINAL GAAS(110) SURFACES, Surface science, 407(1-3), 1998, pp. 82-89
Authors:
ZHANG J
LEES AK
SCHELLINGER A
ENGSTROM JR
HSIEH ML
ZETTLER JT
TAYLOR AG
JOYCE BA
Citation: J. Zhang et al., KINETICS AND DYNAMICS OF SI GSMBE STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Surface science, 404(1-3), 1998, pp. 480-486
Authors:
XIE MH
ZHANG J
FERNANDEZ JM
LEES AK
JOYCE BA
Citation: Mh. Xie et al., ARSENIC DOPING KINETICS IN SILICON DURING GAS SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 397(1-3), 1998, pp. 164-169
Authors:
ITOH M
BELL GR
AVERY AR
JONES TS
JOYCE BA
VVEDENSKY DD
Citation: M. Itoh et al., ISLAND NUCLEATION AND GROWTH ON RECONSTRUCTED GAAS(001) SURFACES, Physical review letters, 81(3), 1998, pp. 633-636
Authors:
HOLMES DM
TOK ES
SUDIJONO JL
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY, Journal of crystal growth, 192(1-2), 1998, pp. 33-46
Authors:
PAK K
FAHY MR
ZHANG XM
JOYCE BA
Citation: K. Pak et al., THE SUBSTRATE ORIENTATION DEPENDENCE OF IN ATOM INCORPORATION DURING THE GROWTH OF (IN,GA)AS ON GAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 186(1-2), 1998, pp. 21-26
Authors:
TOK ES
NEAVE JH
ASHWIN MJ
JOYCE BA
JONES TS
Citation: Es. Tok et al., GROWTH OF SI-DOPED GAAS(110) THIN-FILMS BY MOLECULAR-BEAM EPITAXY - SI SITE OCCUPATION AND THE ROLE OF ARSENIC, Journal of applied physics, 83(8), 1998, pp. 4160-4167
Authors:
JOYCE BA
SUDIJONO JL
BELK JG
YAMAGUCHI H
ZHANG XM
DOBBS HT
ZANGWILL A
VVEDENSKY DD
JONES TS
Citation: Ba. Joyce et al., A SCANNING-TUNNELING-MICROSCOPY REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION-RATE EQUATION STUDY OF THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS ON GAAS(001), GAAS(110) AND GAAS(111)A - QUANTUM DOTS AND 2-DIMENSIONAL MODES, JPN J A P 1, 36(6B), 1997, pp. 4111-4117
Authors:
JOYCE BA
RAVEAU B
RAO CNR
Citation: Ba. Joyce et al., ELECTRONIC MATERIALS, Current opinion in solid state & materials science, 2(1), 1997, pp. 1-2
Authors:
JOYCE BA
ZHANG J
TAYLOR AG
XIE MH
FERNANDEZ JM
LEES AK
Citation: Ba. Joyce et al., IN-SITU STUDIES OF EPITAXIAL SILICON GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Advanced materials for optics and electronics, 7(5), 1997, pp. 215-224
Authors:
RYAN JM
BROERS AN
PAUL DJ
PEPPER M
WHALL TE
FERNANDEZ JM
JOYCE BA
Citation: Jm. Ryan et al., FABRICATION OF SIGE QUANTUM DEVICES BY ELECTRON-BEAM-INDUCED DAMAGE, Superlattices and microstructures, 21(1), 1997, pp. 29-36
Authors:
BELK JG
SUDIJONO JL
YAMAGUCHI H
ZHANG XM
PASHLEY DW
MCCONVILLE CF
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF STRAIN RELAXATION AND MISFITDISLOCATIONS IN INAS LAYERS GROWN ON GAAS(110) AND GAAS(111)A, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 915-918
Authors:
YAMAGUCHI H
BELK JG
ZHANG XM
SUDIJONO JL
FAHY MR
JONES TS
JOYCE BA
Citation: H. Yamaguchi et al., PRECISE CONTROL OF 2-DIMENSIONAL GROWTH OF INAS ON GAAS (111)A SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 112, 1997, pp. 138-141
Authors:
PAUL DJ
RYAN JM
PEPPER M
BROERS AN
WHALL TE
FERNANDEZ JM
JOYCE BA
Citation: Dj. Paul et al., ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM, Microelectronic engineering, 35(1-4), 1997, pp. 59-62
Authors:
GRIFFIN N
PAUL DJ
PEPPER M
TAYLOR S
SMITH JP
ECCLESTON W
FERNANDEZ JM
JOYCE BA
Citation: N. Griffin et al., GATING HIGH-MOBILITY SILICON-GERMANIUM HETEROSTRUCTURES, Microelectronic engineering, 35(1-4), 1997, pp. 309-312
Authors:
BELK JG
PASHLEY DW
MCCONVILLE CF
SUDIJONO JL
JOYCE BA
JONES TS
Citation: Jg. Belk et al., SURFACE ATOMIC CONFIGURATIONS DUE TO DISLOCATION ACTIVITY IN INAS GAAS(110) HETEROEPITAXY/, Physical review. B, Condensed matter, 56(16), 1997, pp. 10289-10296
Authors:
FAHY MR
ZHANG XM
TOK ES
NEAVE JH
VACCARO P
FUJITA K
TAKAHASHI M
WATANABE T
SATO K
JOYCE BA
Citation: Mr. Fahy et al., MBE GROWTH OF LATTICE-MATCHED AND MISMATCHED FILMS ON NON-(001) GAAS SUBSTRATES, Thin solid films, 306(2), 1997, pp. 192-197
Authors:
BELK JG
MCCONVILLE CF
SUDIJONO JL
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SURFACE ALLOYING AT INAS-GAAS INTERFACES GROWN ON (001)-SURFACES BY MOLECULAR-BEAM EPITAXY, Surface science, 387(1-3), 1997, pp. 213-226
Authors:
TAYLOR AG
TURNER AR
JOYCE BA
PEMBLE ME
Citation: Ag. Taylor et al., REFLECTANCE ANISOTROPY OSCILLATIONS OF THE HETEROEPITAXIAL GROWTH OF ALAS AND AL1-XGAXAS ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY, Surface science, 375(2-3), 1997, pp. 367-373