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Results:
1-13
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Results: 13
Authors:
Chevallier, J
Lusson, A
Ballutaud, D
Theys, B
Jomard, F
Deneuville, A
Bernard, M
Gheeraert, E
Bustarret, E
Citation: J. Chevallier et al., Hydrogen-acceptor interactions in diamond, DIAM RELAT, 10(3-7), 2001, pp. 399-404
Authors:
Ballutaud, D
Jomard, F
Theys, B
Mer, C
Tromson, D
Bergonzo, P
Citation: D. Ballutaud et al., Hydrogen diffusion and stability in polycrystalline CVD undoped diamond, DIAM RELAT, 10(3-7), 2001, pp. 405-410
Authors:
Theys, B
Teukam, Z
Jomard, F
de Mierry, P
Polyakov, AY
Barbe, M
Citation: B. Theys et al., Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy, SEMIC SCI T, 16(9), 2001, pp. L53-L56
Authors:
Mimila-Arroyo, J
Lusson, A
Chevallier, J
Barbe, M
Theys, B
Jomard, F
Bland, SW
Citation: J. Mimila-arroyo et al., Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition, APPL PHYS L, 79(19), 2001, pp. 3095-3097
Authors:
Polyakov, AY
Smirnov, NB
Pearton, SJ
Ren, F
Theys, B
Jomard, F
Teukam, Z
Dmitriev, VA
Nikolaev, AE
Usikov, AS
Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
Authors:
de Mierry, P
Beaumont, B
Feltin, E
Schenk, HPD
Gibart, P
Jomard, F
Rushworth, S
Smith, L
Odedra, R
Citation: P. De Mierry et al., Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN., MRS I J N S, 5(8), 2000, pp. 1-3
Authors:
Ballutaud, D
Jomard, F
Le Duigou, J
Theys, B
Chevallier, J
Deneuville, A
Pruvost, F
Citation: D. Ballutaud et al., Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films, DIAM RELAT, 9(3-6), 2000, pp. 1171-1174
Authors:
Gerard, F
Theys, B
Lusson, A
Jomard, F
Dolin, C
Rao, EVK
Benchimol, JL
Citation: F. Gerard et al., Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants (vol 14, pg 1136, 1999), SEMIC SCI T, 15(2), 2000, pp. 233-233
Authors:
Polyakov, AY
Govorkov, AV
Smirnov, NB
Theys, B
Jomard, F
Nikitina, IP
Nikolaev, AE
Dmitriev, VA
Citation: Ay. Polyakov et al., Misfit dislocations at the GaN/SiC interface and their interaction with point defects, SOL ST ELEC, 44(11), 2000, pp. 1955-1960
Authors:
Polyakov, AY
Usikov, AS
Theys, B
Smirnov, NB
Govorkov, AV
Jomard, F
Shmidt, NM
Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Authors:
Pelletier, H
Theys, B
Lusson, A
Cote, D
Rommeluere, JF
Jomard, F
Dolin, C
Citation: H. Pelletier et al., Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe : As layers, J APPL PHYS, 88(1), 2000, pp. 550-554
Authors:
Gerard, F
Theys, B
Lusson, A
Jomard, F
Dolin, C
Rao, EVK
Benchimol, JL
Citation: F. Gerard et al., Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants, SEMIC SCI T, 14(12), 1999, pp. 1136-1140
Authors:
Chevallier, J
Ballutaud, D
Theys, B
Jomard, F
Deneuville, A
Gheeraert, E
Pruvost, F
Citation: J. Chevallier et al., Hydrogen in monocrystalline CVD boron doped diamond, PHYS ST S-A, 174(1), 1999, pp. 73-81
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1-13
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