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Results: 1-9 |
Results: 9
SiC power DIMOS with double implanted Al/B P-well
Authors: Godignon, P Morvan, E Jorda, X Vellvehi, M Flores, D Rebollo, J
Citation: P. Godignon et al., SiC power DIMOS with double implanted Al/B P-well, MICROELEC J, 32(5-6), 2001, pp. 503-507
Dynamic latch-up in advanced LIGBT structures at high operating temperatures
Authors: Vellvehi, M Jorda, X Flores, D Morvan, E Godignon, P Rebollo, J Millan, J
Citation: M. Vellvehi et al., Dynamic latch-up in advanced LIGBT structures at high operating temperatures, MAT SCI E B, 74(1-3), 2000, pp. 304-308
Mapping of 6H-SiC for implantation control
Authors: Morvan, E Godignon, P Montserrat, J Flores, D Jorda, X Vellvehi, M
Citation: E. Morvan et al., Mapping of 6H-SiC for implantation control, DIAM RELAT, 8(2-5), 1999, pp. 335-340
As-Al recoil implantation through Si3N4 barrier layer
Authors: Godignon, P Morvan, E Montserrat, J Jorda, X Flores, D Rebollo, J
Citation: P. Godignon et al., As-Al recoil implantation through Si3N4 barrier layer, NUCL INST B, 147(1-4), 1999, pp. 101-105
Cryogenic operation of emitter switched thyristor structures
Authors: Flores, D Jorda, X Vellvehi, M Rebollo, J Millan, J
Citation: D. Flores et al., Cryogenic operation of emitter switched thyristor structures, SOL ST ELEC, 43(3), 1999, pp. 633-640
Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K
Authors: Vellvehi, M Jorda, X Flores, D Godignon, P Rebollo, J Millan, J
Citation: M. Vellvehi et al., Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K, MICROEL REL, 39(8), 1999, pp. 1239-1246
Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures
Authors: Vellvehi, M Jorda, X Godignon, P Flores, D Hidalgo, S Rebollo, J
Citation: M. Vellvehi et al., Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures, MICROELEC J, 30(6), 1999, pp. 583-589
Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor
Authors: Flores, D Godignon, P Jorda, X Vellvehi, M Fernandez, J Millan, J
Citation: D. Flores et al., Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor, MICROELEC J, 30(6), 1999, pp. 591-597
An optimized bidirectional lightning surge protection semiconductor device
Authors: Flores, D Jorda, X Hidalgo, S Fernandez, J Rebollo, J Millan, J Sierra, I Mazarredo, I
Citation: D. Flores et al., An optimized bidirectional lightning surge protection semiconductor device, IEEE ELMAGN, 41(1), 1999, pp. 30-38
Risultati: 1-9 |