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Results: 1-25/26
Authors:
Dunbar, A
Bangert, U
Dawson, P
Halsall, M
Shiraki, Y
Miura, M
Berbezier, I
Joyce, BA
Zhang, J
Citation: A. Dunbar et al., Structural, compositional and optical properties of self-organised Ge quantum dots, PHYS ST S-B, 224(1), 2001, pp. 265-269
Authors:
Tok, ES
Zhang, J
Kamiya, I
Xie, MH
Neave, JH
Joyce, BA
Citation: Es. Tok et al., Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries, SURF REV L, 8(5), 2001, pp. 509-511
Authors:
Pashley, DW
Neave, JH
Joyce, BA
Citation: Dw. Pashley et al., A model for the appearance of chevrons on RHEED patterns from InAs quantumdots, SURF SCI, 476(1-2), 2001, pp. 35-42
Authors:
Zhi, D
Davock, H
Murray, R
Roberts, C
Jones, TS
Pashley, DW
Goodhew, PJ
Joyce, BA
Citation: D. Zhi et al., Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy, J APPL PHYS, 89(4), 2001, pp. 2079-2083
Authors:
Itoh, M
Bell, GR
Joyce, BA
Vvedensky, DD
Citation: M. Itoh et al., Monte Carlo simulation of GaAs(001) homoepitaxy, PROG T PH S, (138), 2000, pp. 90-95
Authors:
Zheng, YJ
Engstrom, JR
Zhang, J
Schellinger, A
Joyce, BA
Citation: Yj. Zheng et al., The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane, SURF SCI, 470(1-2), 2000, pp. 131-140
Authors:
Itoh, M
Bell, GR
Joyce, BA
Vvedensky, DD
Citation: M. Itoh et al., Transformation kinetics of homoepitaxial islands on GaAs(001), SURF SCI, 464(2-3), 2000, pp. 200-210
Authors:
Steans, PH
Neave, JH
Bell, GR
Zhang, J
Joyce, BA
Jones, TS
Citation: Ph. Steans et al., A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURF SCI, 459(3), 2000, pp. 277-286
Authors:
Bell, GR
Jones, TS
Neave, JH
Joyce, BA
Citation: Gr. Bell et al., Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs, SURF SCI, 458(1-3), 2000, pp. 247-256
Authors:
Colla, G
Mitchell, JP
Joyce, BA
Huyck, LM
Wallender, WW
Temple, SR
Hsiao, TC
Poudel, DD
Citation: G. Colla et al., Soil physical properties and tomato yield and quality in alternative cropping systems, AGRON J, 92(5), 2000, pp. 924-932
Authors:
Joyce, BA
Vvedensky, DD
Bell, GR
Belk, JG
Itoh, M
Jones, TS
Citation: Ba. Joyce et al., Nucleation and growth mechanisms during MBE of III-V compounds, MAT SCI E B, 67(1-2), 1999, pp. 7-16
Authors:
Tejedor, P
Smilauer, P
Roberts, C
Joyce, BA
Citation: P. Tejedor et al., Surface-morphology evolution during unstable homoepitaxial growth of GaAs(110), PHYS REV B, 59(3), 1999, pp. 2341-2345
Authors:
Gallas, B
Hartmann, JM
Breton, G
Harris, JJ
Zhang, J
Joyce, BA
Citation: B. Gallas et al., Influence of doping on facet formation at the SiO2/Si interface, SURF SCI, 440(1-2), 1999, pp. 41-48
Authors:
Bell, GR
Itoh, M
Jones, TS
Joyce, BA
Vvedensky, DD
Citation: Gr. Bell et al., Islands and defects on the growing InAs(001)-(2 x 4) surface, SURF SCI, 435, 1999, pp. 455-459
Authors:
Bell, GR
Jones, TS
Joyce, BA
Citation: Gr. Bell et al., Direct observation of anisotropic step activity on GaAs(001), SURF SCI, 429(1-3), 1999, pp. L492-L496
Authors:
Tejedor, P
Smilauer, P
Joyce, BA
Citation: P. Tejedor et al., Growth modes in homoepitaxy on vicinal GaAs(110) surfaces, SURF SCI, 424(2-3), 1999, pp. L309-L313
Authors:
Bell, GR
Itoh, M
Jones, TS
Joyce, BA
Citation: Gr. Bell et al., Nanoscale effects of arsenic kinetics on GaAs(001)-(2x4) homoepitaxy, SURF SCI, 423(2-3), 1999, pp. L280-L284
Authors:
Farenga, SJ
Joyce, BA
Citation: Sj. Farenga et Ba. Joyce, Intentions of young students to enroll in science courses in the future: An examination of gender differences, SCI EDUC, 83(1), 1999, pp. 55-75
Authors:
Tejedor, P
Smilauer, P
Joyce, BA
Citation: P. Tejedor et al., Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces, MICROELEC J, 30(4-5), 1999, pp. 477-482
Authors:
Vvedensky, DD
Itoh, M
Bell, GR
Jones, TS
Joyce, BA
Citation: Dd. Vvedensky et al., Island nucleation and growth during homoepitaxy on GaAs(001)-(2 x 4), J CRYST GR, 202, 1999, pp. 56-61
Authors:
Joyce, BA
Vvedensky, DD
Jones, TS
Itoh, M
Bell, GR
Belk, JG
Citation: Ba. Joyce et al., In situ studies of III-V semiconductor film growth by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 106-112
Authors:
Steans, PH
Neave, JH
Zhang, J
Tok, ES
Bell, GR
Joyce, BA
Jones, TS
Citation: Ph. Steans et al., Re-entrant behaviour in GaAs(111)A homoepitaxy, J CRYST GR, 202, 1999, pp. 198-201
Authors:
Gallas, B
Hartmann, JM
Berbezier, I
Abdallah, M
Zhang, J
Harris, JJ
Joyce, BA
Citation: B. Gallas et al., Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers, J CRYST GR, 202, 1999, pp. 547-550
Authors:
Hartmann, JM
Gallas, B
Zhang, J
Harris, JJ
Joyce, BA
Citation: Jm. Hartmann et al., Strain-balanced Si SiGe short period superlattices: Disruption of the surface crosshatch, J APPL PHYS, 86(2), 1999, pp. 845-849
Authors:
Joyce, PB
Krzyzewski, TJ
Bell, GR
Joyce, BA
Jones, TS
Citation: Pb. Joyce et al., Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying, PHYS REV B, 58(24), 1998, pp. R15981-R15984