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Results:
1-16
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Results: 16
Authors:
ANGELOV C
FAURE J
KALITZOVA M
SIMOV S
TZVETKOVA T
DJAKOV A
Citation: C. Angelov et al., EFFECTS OF HIGH-DOSE BI- AN ATOMIC-FORCE AND TRANSMISSION ELECTRON-MICROSCOPY STUDY( IMPLANTATION ON SI ), Vacuum, 51(2), 1998, pp. 285-288
Authors:
KALITZOVA M
KARPUZOV D
MARINOVA T
KRASTEV V
VITALI G
PIZZUTO C
ZOLLO G
Citation: M. Kalitzova et al., INP CRYSTALS-ION IMPLANTATION AND LASER ANNEALING - RHEED, XPS AND COMPUTER-SIMULATION STUDIES, Applied surface science, 115(1), 1997, pp. 1-9
Authors:
MARINOVA T
KAKANAKOVAGEORGIEVA A
KALITZOVA M
VITALI G
PIZZUTO C
ZOLLO G
Citation: T. Marinova et al., XPS DEPTH PROFILING OF LASER-ANNEALED ZN-IMPLANTED GAAS(), Applied surface science, 110, 1997, pp. 80-86
Authors:
FAURE J
ANGELOV C
KALITZOVA M
SIMOV S
Citation: J. Faure et al., TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE CRYSTAL-AMORPHOUS-POLYCRYSTAL TRANSITION IN SILICON DURING BISMUTH ROOM-TEMPERATURE ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(3), 1997, pp. 418-424
Authors:
PIZZUTO C
ZOLLO G
VITALI G
KARPUZOV D
KALITZOVA M
Citation: C. Pizzuto et al., ACTIVATION OF ELECTRICAL CARRIERS IN ZN-IMPLANTED INP BY LOW-POWER PULSED-LASER ANNEALING, Journal of applied physics, 82(11), 1997, pp. 5334-5338
Authors:
KALITZOVA M
SIMOV S
YANKOV RA
ANGELOV C
VITALI G
ROSSI M
PIZZUTO C
ZOLLO G
FAURE J
KILLIAN L
BONHOMME P
VOELSKOW M
Citation: M. Kalitzova et al., AMORPHIZATION AND CRYSTALLIZATION IN HIGH-DOSE ZN-IMPLANTED SILICON(), Journal of applied physics, 81(3), 1997, pp. 1143-1149
Authors:
VITALI G
ROSSI M
PIZZUTO C
ZOLLO G
KALITZOVA M
Citation: G. Vitali et al., LOW-POWER PULSED-LASER ANNEALING OF ZN-IMPLANTED INP - FIRST ENDEAVORS(), Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 72-75
Authors:
SIMOV S
KALITZOVA M
KARPUZOV D
YANKOV R
ANGELOV C
FAURE J
BONHOMME P
BALOSSIER G
Citation: S. Simov et al., HIGH-DOSE PHENOMENA IN ZINC-IMPLANTED SILICON-CRYSTALS, Journal of applied physics, 79(7), 1996, pp. 3470-3476
Authors:
VITALI G
ZOLLO G
PIZZUTO C
MANNO D
KALITZOVA M
ROSSI M
Citation: G. Vitali et al., CROSS-SECTIONAL HIGH-RESOLUTION ELECTRON-MICROSCOPY OF ZN-POWER PULSED-LASER ANNEALED GAAS( IMPLANTED AND LOW), Applied physics letters, 69(26), 1996, pp. 4072-4074
Authors:
VITALI G
ROSSI M
ZOLLO G
PIZZUTO C
PASHOV N
KALITZOVA M
Citation: G. Vitali et al., LATTICE ELECTRON-MICROSCOPY AND IMAGE-PROCESSING OF ION-IMPLANTED ANDLASER-ANNEALED GAAS STRUCTURES, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 483-490
Authors:
PASHOV N
VITALI G
KALITZOVA M
ROSSI M
Citation: N. Pashov et al., LATTICE-DEFECTS IN ION-IMPLANTED GAAS, Physica status solidi. a, Applied research, 150(1), 1995, pp. 239-245
Authors:
VITALI G
PIZZUTO C
ROSSI M
ZOLLO G
KARPUZOV D
KALITZOVA M
Citation: G. Vitali et al., LASER-INDUCED REDUCTION OF CARRIER ACTIVATION-ENERGY IN ZN-IMPLANTED GAAS, JPN J A P 1, 33(5A), 1994, pp. 2762-2767
Authors:
VITALI G
CONSALVI G
ROSSI M
PIZZUTO C
ZOLLO G
KALITZOVA M
Citation: G. Vitali et al., RANDOM AND CHANNELED ION-DAMAGE DISTRIBUTIONS IN ZN-MICROSCOPY( IMPLANTED GAAS BY ELECTRON), Radiation effects and defects in solids, 132(1), 1994, pp. 19-26
Authors:
PASHOV N
KALITZOVA M
VITALI G
ROSSI M
BAITHER D
Citation: N. Pashov et al., HIGH-VOLTAGE TRANSMISSION ELECTRON-MICROSCOPY OF LOW-POWER PULSED-LASER ANNEALING OF ZN+ IMPLANTED GAAS, JPN J A P 1, 32(6A), 1993, pp. 2597-2600
Authors:
KALITZOVA M
KARPUZOV D
PASHOV N
VITALI G
ROSSI M
SCHOLZ R
Citation: M. Kalitzova et al., DAMAGE DISTRIBUTION IN GAAS IMPLANTED AT ELEVATED-TEMPERATURE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 647-650
Authors:
KRASTEV V
MARINOVA T
KARPUZOV D
KALITZOVA M
VITALI G
ROSSI M
Citation: V. Krastev et al., XPS STUDY OF LASER-ANNEALED ION-IMPLANTED GAAS, Surface and interface analysis, 20(12), 1993, pp. 955-958
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1-16
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