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Results: 1-25/35
Authors:
SIWIEC J
SOKOLOWSKA A
OLSZYNA A
DWILINSKI R
KAMINSKA M
KONWERSKAHRABOWSKA J
Citation: J. Siwiec et al., PHOTOLUMINESCENCE PROPERTIES OF NANOCRYSTALLINE, WIDE-BAND GAP NITRIDES (C3N4, BN, ALN, GAN), Nanostructured materials, 10(4), 1998, pp. 625-634
Authors:
DWILINSKI R
DORADZINSKI R
GARCZYNSKI J
SIERZPUTOWSKI L
BARANOWSKI JM
KAMINSKA M
Citation: R. Dwilinski et al., AMMONO METHOD OF GAN AND ALN PRODUCTION, DIAMOND AND RELATED MATERIALS, 7(9), 1998, pp. 1348-1350
Authors:
KAMINSKA M
KORBIN M
KOMOROWSKA B
PULAWSKA J
Citation: M. Kaminska et al., STUNTING AND FLOWER BUDS DEFICIENCY OF LILIUM SP - A NEW PHYTOPLASMA ASSOCIATED DISEASE, Acta Physiologiae Plantarum, 20(1), 1998, pp. 49-53
Authors:
LEON R
LOBO C
CLARK A
BOZEK R
WYSMOLEK A
KURPIEWSKI A
KAMINSKA M
Citation: R. Leon et al., DIFFERENT PATHS TO TUNABILITY IN III-V QUANTUM DOTS, Journal of applied physics, 84(1), 1998, pp. 248-254
Authors:
RUDZINSKALANGWALD A
KAMINSKA M
Citation: A. Rudzinskalangwald et M. Kaminska, CYTOPATHOLOGICAL CHARACTERISTICS OF TOMATO SPOTTED WILT VIRUS ISOLATES, Acta Societatis Botanicorum Poloniae, 67(2), 1998, pp. 167-173
Authors:
DWILINSKI R
DORADZINSKI R
GARCZYNSKI J
SIERZPUTOWSKI L
BARANOWSKI JM
KAMINSKA M
Citation: R. Dwilinski et al., EXCITON PHOTOLUMINESCENCE OF GAN BULK CRYSTALS GROWN BY THE AMMONO METHOD, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 46-49
Authors:
OLSZYNA A
SIWIEC J
DWILINSKI R
KAMINSKA M
KONWERSKAHRABOWSKA J
SOKOLOWSKA A
Citation: A. Olszyna et al., PHOTOLUMINESCENCE PROPERTIES OF NANOCRYSTALLINE ALN LAYERS GROWN BY PULSE PLASMA-ASSISTED CVD, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 170-173
Authors:
SUCHANEK B
PALCZEWSKA M
PAKULA K
BARANOWSKI J
KAMINSKA M
Citation: B. Suchanek et al., ELECTRICAL AND ESR STUDIES OF GAN LAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Acta Physica Polonica. A, 92(5), 1997, pp. 1001-1004
Authors:
DWILINSKI R
BARANOWSKI JM
KAMINSKA M
DORADZINSKI R
GARCZYNSKI J
SIERZPUTOWSKI L
PALCZEWSKA M
Citation: R. Dwilinski et al., SOME OPTICAL AND EPR PROPERTIES OF STRAIN-FREE GAN CRYSTALS OBTAINED BY AMMONO METHOD, Acta Physica Polonica. A, 92(4), 1997, pp. 737-741
Authors:
JASINSKI J
LILIENTALWEBER Z
WASHBURN J
TAN HH
JAGADISH C
KROTKUS A
MARCINKEVICIUS S
KAMINSKA M
Citation: J. Jasinski et al., STRUCTURAL, ELECTRICAL, AND OPTICAL STUDIES OF GAAS IMPLANTED WITH MEV AS OR GA IONS, Journal of electronic materials, 26(5), 1997, pp. 449-458
Authors:
TAN HH
JAGADISH C
KORONA KP
JASINSKI J
KAMINSKA M
VISELGA R
MARCINKEVICIUS S
KROTKUS A
Citation: Hh. Tan et al., ION-IMPLANTED GAAS FOR SUBPICOSECOND OPTOELECTRONIC APPLICATIONS, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 636-642
Authors:
DWILINSKI R
BARANOWSKI JM
KAMINSKA M
DORADZINSKI R
GARCZYNSKI J
SIERZPUTOWSKI L
Citation: R. Dwilinski et al., ON GAN CRYSTALLIZATION BY AMMONOTHERMAL METHOD, Acta Physica Polonica. A, 90(4), 1996, pp. 763-766
Authors:
KORONA KP
JASINSKI J
KURPIEWSKI A
KAMINSKA M
JAGADISH C
TAN HH
KROTKUS A
MARCINKEVICIUS S
Citation: Kp. Korona et al., ULTRAFAST CARRIER TRAPPING AND HIGH-RESISTIVITY OF MEV ENERGY ION-IMPLANTED GAAS, Acta Physica Polonica. A, 90(4), 1996, pp. 851-854
Authors:
MARCINKEVICIUS S
KROTKUS A
JASUTIS V
BERTULIS K
TAN HH
JAGADISH C
KAMINSKA M
Citation: S. Marcinkevicius et al., TIME AND SPATIALLY-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF NONSTOICHIOMETRIC GAAS, Applied physics letters, 68(3), 1996, pp. 397-399
Authors:
JAGADISH C
TAN HH
KROTKUS A
MARCINKEVICIUS S
KORONA KP
KAMINSKA M
Citation: C. Jagadish et al., ULTRAFAST CARRIER TRAPPING IN HIGH-ENERGY ION-IMPLANTED GALLIUM-ARSENIDE, Applied physics letters, 68(16), 1996, pp. 2225-2227
Authors:
KROTKUS A
MARCINKEVICIUS S
JASINSKI J
KAMINSKA M
TAN HH
JAGADISH C
Citation: A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS (VOL 66, PG 3304, 1995), Applied physics letters, 68(12), 1996, pp. 1735-1735
Authors:
JASINSKI J
CHEN Y
WASHBURN J
LILIENTALWEBER Z
TAN HH
JAGADISH C
KAMINSKA M
Citation: J. Jasinski et al., RECRYSTALLIZATION OF HIGH-ENERGY AS-IMPLANTED GAAS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 68(11), 1996, pp. 1501-1503
Authors:
LEON R
WERNER P
YU KM
KAMINSKA M
WEBER ER
Citation: R. Leon et al., ELECTRICAL-ACTIVITY AND PRECIPITATION BEHAVIOR OF COPPER IN GALLIUM-ARSENIDE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 7-16
Authors:
DWILINSKI R
WYSMOLEK A
BARANOWSKI J
KAMINSKA M
DORADZINSKI R
GARCZYNSKI J
SIERZPUTOWSKI L
JACOBS H
Citation: R. Dwilinski et al., GAN SYNTHESIS BY AMMONOTHERMAL METHOD, Acta Physica Polonica. A, 88(5), 1995, pp. 833-836
Authors:
WYSMOLEK A
BARANOWSKI JM
KAMINSKA M
Citation: A. Wysmolek et al., ORIGIN OF CENTERS INVOLVED IN BLUE AND ORANGE LUMINESCENCE OF 6H-SIC, Acta Physica Polonica. A, 88(5), 1995, pp. 957-960
Authors:
ZUBKA A
DWILINSKI R
SUCHANEK B
JANIK W
WYSMOLEK A
KWIATKOWSKI S
KAMINSKA M
SHAGINYAN L
Citation: A. Zubka et al., GAN LAYERS GROWN BY REACTIVE ION PLATING, Acta Physica Polonica. A, 88(5), 1995, pp. 1058-1062
Authors:
JASINSKI J
KURPIEWSKI A
KORONA K
KAMINSKA M
PALCZEWSKA M
KROTKUS A
MARCINKIEVICIUS S
LILIENTALWEBER Z
TAN HH
JAGADISH C
Citation: J. Jasinski et al., ROLE OF ARSENIC ANTISITE DEFECT IN NONSTOICHIOMETRIC GALLIUM-ARSENIDE, Acta Physica Polonica. A, 88(4), 1995, pp. 747-750
Authors:
SUCHANEK B
DWILINSKI R
KAMINSKA M
PALCZEWSKA M
VLASKINA S
Citation: B. Suchanek et al., NATURE OF DONORS IN SIC, Acta Physica Polonica. A, 87(2), 1995, pp. 321-324
Authors:
KORONA KP
KAMINSKA M
BARANOWSKI JM
Citation: Kp. Korona et al., MODEL OF HOPPING BETWEEN DEEP CENTERS IN LOW-TEMPERATURE GAAS, Acta Physica Polonica. A, 87(2), 1995, pp. 337-340
Authors:
WYSMOLEK A
MROZINSKI P
DWILINSKI R
VLASKINA S
KAMINSKA M
Citation: A. Wysmolek et al., COMPETITION OF RADIATION PROCESSES IN 6H-SIC OBSERVED BY LUMINESCENCE, Acta Physica Polonica. A, 87(2), 1995, pp. 437-440