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Results:
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Results: 22
Authors:
GOLOVAN LA
KASHKAROV PK
SOSNOVSKIKH YN
TIMOSHENKO VY
CHECHENIN NG
LAKEENKOV VM
Citation: La. Golovan et al., INVESTIGATION OF LASER-INDUCED DEFECT FORMATION IN CDTE CRYSTALS BY RUTHERFORD BACKSCATTERING, Physics of the solid state, 40(2), 1998, pp. 187-189
Authors:
VOLKOV RV
GORDIENKO VM
DZHIDZHOEV MS
KAMENEV BV
KASHKAROV PK
PONOMAREV YV
SAVELEV AB
TIMOSHENKO VY
SHASHKOV AA
Citation: Rv. Volkov et al., GENERATION OF HARD X-RAY-RADIATION BY IRRADIATION OF POROUS SILICON WITH ULTRAINTENSE FEMTOSECOND LASER-PULSES, Quantum electronics, 28(1), 1998, pp. 1-2
Authors:
KASHKAROV PK
KAMENEV BV
KONSTANTINOVA EA
EFIMOVA AI
PAVLIKOV AV
TIMOSHENKO VY
Citation: Pk. Kashkarov et al., DYNAMICS OF NONEQUILIBRIUM CHARGE-CARRIERS IN SILICON QUANTUM WIRES, Uspehi fiziceskih nauk, 168(5), 1998, pp. 577-582
Authors:
GOLOVAN LA
MARKOV BA
KASHKAROV PK
TIMOSHENKO VY
Citation: La. Golovan et al., EVAPORATION EFFECT ON LASER-INDUCED SOLID-LIQUID PHASE-TRANSITIONS INCDTE AND HGCDTE, Solid state communications, 108(10), 1998, pp. 707-712
Authors:
GOLOVAN LA
KASHKAROV PK
TIMOSHENKO VY
LAKEENKOV VM
Citation: La. Golovan et al., EFFECT OF PULSED-LASER IRRADIATION ON THE OPTICAL CHARACTERISTICS ANDPHOTOCONDUCTIVITY OF THE SOLID-SOLUTIONS CDHGTE, Semiconductors, 31(8), 1997, pp. 793-796
Authors:
KASHKAROV PK
KONSTANTINOVA EA
PETROVA SA
TIMOSHENKO VY
YUNOVICH AE
Citation: Pk. Kashkarov et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 31(6), 1997, pp. 639-641
Authors:
KASHKAROV PK
KONSTANTINOVA EA
PAVLIKOV AV
TIMOSHENKO VY
Citation: Pk. Kashkarov et al., INFLUENCE OF AMBIENT DIELECTRIC-PROPERTIES ON THE LUMINESCENCE IN QUANTUM WIRES OF POROUS SILICON, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 123-129
Authors:
ZOTEEV AV
KASHKAROV PK
OBRAZTSOV AN
TIMOSHENKO VY
Citation: Av. Zoteev et al., ELECTROCHEMICAL FORMATION AND OPTICAL-PROPERTIES OF POROUS GALLIUM-PHOSPHIDE, Semiconductors, 30(8), 1996, pp. 775-777
Authors:
KASHKAROV PK
KONSTANTINOVA EA
TIMOSHENKO VY
Citation: Pk. Kashkarov et al., MECHANISMS FOR THE EFFECT OF ADSORPTION OF MOLECULES ON RECOMBINATIONPROCESSES IN POROUS SILICON, Semiconductors, 30(8), 1996, pp. 778-783
Authors:
GOLOVAN LA
KASHKAROV PK
TIMOSHENKO VY
Citation: La. Golovan et al., LASER-INDUCED MELTING AND DEFECT FORMATION IN CADMIUM TELLURIDE, Laser physics, 6(5), 1996, pp. 925-927
Authors:
TIMOSHENKO VY
KASHKAROV PK
MATVEEVA AB
KONSTANTINOVA EA
FLIETNER H
DITTRICH T
Citation: Vy. Timoshenko et al., INFLUENCE OF PHOTOLUMINESCENCE AND TRAPPING ON THE PHOTOVOLTAGE AT THE POR-SI P-SI STRUCTURE/, Thin solid films, 276(1-2), 1996, pp. 216-218
Authors:
KONSTANTINOVA EA
DITTRICH T
TIMOSHENKO VY
KASHKAROV PK
Citation: Ea. Konstantinova et al., ADSORPTION-INDUCED MODIFICATION OF SPIN AND RECOMBINATION CENTERS IN POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 265-267
Authors:
TIMOSHENKO VY
GAREEVA AR
KASHKAROV PK
PETROV VI
SIEBER I
DITTRICH T
Citation: Vy. Timoshenko et al., STABLE AND EFFICIENT CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE FROM ULTRATHIN POROUS SILICON LAYERS, Thin solid films, 276(1-2), 1996, pp. 287-289
Authors:
OBRAZTSOV AN
KASHKAROV PK
ZOTEEV AV
SOROKIN IN
SOSNOVSKIKH YN
Citation: An. Obraztsov et al., NATURE OF CHARGE TRAPS IN ANODE OXIDE-FILMS ON GAAS, Journal of the Electrochemical Society, 143(3), 1996, pp. 1109-1112
Authors:
MATVEEVA AB
KONSTANTINOVA EA
TIMOSHENKO VY
KASHKAROV PK
Citation: Ab. Matveeva et al., PHOTOEMF AND PHOTOINDUCED TRAPPING OF A CHARGE IN POROUS SILICON, Semiconductors, 29(12), 1995, pp. 1142-1146
Authors:
GOLOVAN LA
KASHKAROV PK
TIMOSHENKO VY
Citation: La. Golovan et al., STUDY OF LASER-INDUCED FUSION OF CADMIUM TELLURIDE BY OPTICAL METHODS, Pis'ma v Zurnal tehniceskoj fiziki, 21(23), 1995, pp. 26-29
Authors:
DITTRICH T
KASHKAROV PK
KONSTANTINOVA EA
TIMOSHENKO VY
Citation: T. Dittrich et al., RELAXATION MECHANISMS OF ELECTRONIC EXCITATION IN NANOSTRUCTURES OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 74-76
Authors:
DITTRICH T
FLIETNER H
TIMOSHENKO VY
KASHKAROV PK
Citation: T. Dittrich et al., INFLUENCE OF THE OXIDATION PROCESS ON THE LUMINESCENCE OF HF-TREATED POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 149-151
Authors:
KASHKAROV PK
TIMOSHENKO VY
KONSTANTINOVA EA
PETROVA SA
Citation: Pk. Kashkarov et al., CARRIER RECOMBINATION IN POROUS SILICON, Semiconductors, 28(1), 1994, pp. 60-62
Authors:
GOLOVAN LA
ZOTEEV AV
KASHKAROV PK
TIMOSHENKO VY
Citation: La. Golovan et al., STUDY OF POROUS SILICON BY THE RAMAN LIGH T-SCATTERING AND 2ND HARMONICS GENERATION, Pis'ma v Zurnal tehniceskoj fiziki, 20(8), 1994, pp. 66-69
Authors:
VISKOVATYKH IY
KASHKAROV PK
TIMOSHENKO VY
Citation: Iy. Viskovatykh et al., THE DEFECT FORMATION IN GALLIUM-PHOSPHIDE INDUCED BY WEAKLY ABSORBED LASER-PULSES, Vestnik Moskovskogo universiteta. Seria 3. Fizika, astronomia, 34(6), 1993, pp. 89-91
Authors:
VISKOVATIKH IY
LAKEENKOV VM
KASHKAROV PK
PETROV VI
TIMOSHENKO VY
KHILINSKIJ FI
Citation: Iy. Viskovatikh et al., THE INFLUENCE OF PULSE LASER IRRADIATION ON LUMINESCENCE PROPERTIES OF CADMIUM TELLURIDE, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(9), 1993, pp. 12-16
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