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CHARACTERIZATION OF HIGHLY EFFICIENT CDTE THIN-FILM SOLAR-CELLS BY LOW-TEMPERATURE PHOTOLUMINESCENCE
Authors:
OKAMOTO T
MATSUZAKI Y
AMIN N
YAMADA A
KONAGAI M
Citation: T. Okamoto et al., CHARACTERIZATION OF HIGHLY EFFICIENT CDTE THIN-FILM SOLAR-CELLS BY LOW-TEMPERATURE PHOTOLUMINESCENCE, JPN J A P 1, 37(7), 1998, pp. 3894-3899
Authors:
BUDIMAN M
YAMADA A
KONAGAI M
Citation: M. Budiman et al., HETEROEPITAXY OF LAYERED COMPOUND INSE AND INSE GASE ONTO GAAS SUBSTRATES/, JPN J A P 1, 37(7), 1998, pp. 4092-4098
Authors:
OHTAKE Y
CHAISITSAK S
YAMADA A
KONAGAI M
Citation: Y. Ohtake et al., CHARACTERIZATION OF ZNINXSEY THIN-FILMS AS A BUFFER LAYER FOR HIGH-EFFICIENCY CU(INGA)SE-2 THIN-FILM SOLAR-CELLS, JPN J A P 1, 37(6A), 1998, pp. 3220-3225
Authors:
MIURA N
YAMADA A
KONAGAI M
Citation: N. Miura et al., FABRICATION OF SUBMICRON GAP STRUCTURES USING DIRECTLY-DEPOSITED AMORPHOUS-CARBON WIRES, JPN J A P 1, 37(4A), 1998, pp. 2072-2073
Authors:
ABE K
WATAHIKI T
YAMADA A
KONAGAI M
Citation: K. Abe et al., CHARACTERIZATION OF HYDROGEN IN EPITAXIAL SILICON FILMS GROWN AT VERY-LOW TEMPERATURES, JPN J A P 1, 37(3B), 1998, pp. 1202-1205
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., ROOM-TEMPERATURE NB-BASED SINGLE-ELECTRON TRANSISTORS, JPN J A P 1, 37(3B), 1998, pp. 1594-1598
Authors:
BUDIMAN M
OKAMOTO T
YAMADA A
KONAGAI M
Citation: M. Budiman et al., HETEROEPITAXY AND MULTIQUANTUM-WELL STRUCTURE OF LAYERED COMPOUND GASE GASXSE1-X ON (001)GAAS SUBSTRATE/, JPN J A P 1, 37(10), 1998, pp. 5497-5499
Authors:
MIURA N
NUMAGUCHI T
YAMADA A
KONAGAI M
SHIRAKASHI J
Citation: N. Miura et al., ROOM-TEMPERATURE OPERATION OF AMORPHOUS CARBON-BASED SINGLE-ELECTRON TRANSISTORS FABRICATED BY BEAM-INDUCED DEPOSITION TECHNIQUES, JPN J A P 2, 37(4A), 1998, pp. 423
Authors:
SANG BS
YAMADA A
KONAGAI M
Citation: Bs. Sang et al., TEXTURED ZNO THIN-FILMS FOR SOLAR-CELLS GROWN BY A 2-STEP PROCESS WITH THE ATOMIC LAYER DEPOSITION TECHNIQUE, JPN J A P 2, 37(2B), 1998, pp. 206-208
Authors:
SANG BS
YAMADA A
KONAGAI M
Citation: Bs. Sang et al., HIGHLY STABLE ZNO THIN-FILMS BY ATOMIC LAYER DEPOSITION, JPN J A P 2, 37(10A), 1998, pp. 1125-1128
Authors:
SHIRAKASHI JI
MATSUMOTO K
KONAGAI M
Citation: Ji. Shirakashi et al., AN AFM-BASED SURFACE OXIDATION PROCESS FOR HEAVILY CARBON-DOPED P-TYPE GAAS WITH A HOLE CONCENTRATION OF 1.5 X 10(21) CM(-3), Applied physics A: Materials science & processing, 66, 1998, pp. 1083-1087
Authors:
HATATANI S
YUASA K
KONAGAI M
Citation: S. Hatatani et al., MOMBE GROWTH OF INGAP ON (100) AND (411)A GAAS SUBSTRATES USING TERTIARYBUTYLPHOSPHINE (TBP), Journal of crystal growth, 188(1-4), 1998, pp. 17-20
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., 298 K OPERATION OF NB NB OXIDE-BASED SINGLE-ELECTRON TRANSISTORS WITHREDUCED-SIZE OF TUNNEL-JUNCTIONS BY THERMAL-OXIDATION/, Journal of applied physics, 83(10), 1998, pp. 5567-5569
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., SINGLE-ELECTRON CHARGING EFFECTS IN NB NB OXIDE-BASED SINGLE-ELECTRONTRANSISTORS AT ROOM-TEMPERATURE/, Applied physics letters, 72(15), 1998, pp. 1893-1895
Authors:
OH JH
HAYAKAWA N
KONAGAI M
Citation: Jh. Oh et al., CARBON DIFFUSION BEHAVIOR IN A GAAS TUNNEL JUNCTION WITH A HEAVILY CARBON-DOPED P(-LAYER BY METALORGANIC MOLECULAR-BEAM EPITAXY()), JPN J A P 1, 36(10), 1997, pp. 6300-6301
Authors:
OSHIMA T
YAMADA A
KONAGAI M
Citation: T. Oshima et al., ANALYSIS OF H-2-DILUTION EFFECTS ON PHOTOCHEMICAL VAPOR-DEPOSITION OFSI THIN-FILMS, JPN J A P 1, 36(10), 1997, pp. 6481-6487
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., SINGLE-ELECTRON TRANSISTORS (SETS) WITH NB NB OXIDE SYSTEM FABRICATEDBY ATOMIC-FORCE MICROSCOPE (AFM) NANO-OXIDATION PROCESS/, JPN J A P 2, 36(9AB), 1997, pp. 1257-1260
Authors:
MIURA N
YAMADA A
KONAGAI M
Citation: N. Miura et al., FABRICATION OF SUBMICRON TUNGSTEN CARBIDE (WCX) AMORPHOUS-CARBON (A-C) STACKED JUNCTION BY BEAM-INDUCED REACTION PROCESSES, JPN J A P 2, 36(9AB), 1997, pp. 1275-1278
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., NB NB OXIDE-BASED PLANAR-TYPE METAL/INSULATOR/METAL (MIM) DIODES FABRICATED BY ATOMIC-FORCE MICROSCOPE (AFM) NANO-OXIDATION PROCESS/, JPN J A P 2, 36(8B), 1997, pp. 1120-1122
Authors:
MIURA N
ISHII H
YAMADA A
KONAGAI M
YAMAUCHI Y
YAMAMOTO A
Citation: N. Miura et al., ANOMALOUS ELECTRICAL CHARACTERISTICS OF EPITAXIAL INN FILMS HAVING A HIGH ELECTRON-CONCENTRATION AT VERY-LOW TEMPERATURE, JPN J A P 2, 36(3A), 1997, pp. 256-259
Authors:
MIURA N
NUMAGUCHI T
YAMADA A
KONAGAI M
SHIRAKASHI J
Citation: N. Miura et al., SINGLE-ELECTRON TUNNELING THROUGH AMORPHOUS-CARBON DOTS ARRAY, JPN J A P 2, 36(12A), 1997, pp. 1619-1621
Authors:
SANG B
YAMADA A
KONAGAI M
Citation: B. Sang et al., GROWTH OF BORON-DOPED ZNO THIN-FILMS BY ATOMIC LAYER DEPOSITION, Solar energy materials and solar cells, 49(1-4), 1997, pp. 19-26
Authors:
SAITO K
WATANABE Y
TAKAHASHI K
MATSUZAWA T
SANG BS
KONAGAI M
Citation: K. Saito et al., PHOTO ATOMIC LAYER DEPOSITION OF TRANSPARENT CONDUCTIVE ZNO FILMS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 187-193
Authors:
OHTAKE Y
OKAMOTO T
YAMADA A
KONAGAI M
SAITO K
Citation: Y. Ohtake et al., IMPROVED PERFORMANCE OF CU(INGA)SE2 THIN-FILM SOLAR-CELLS USING EVAPORATED CD-FREE BUFFER LAYERS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 269-275
Authors:
SAITOH T
KONAGAI M
Citation: T. Saitoh et M. Konagai, PROCEEDINGS OF THE 9TH AL-PHOTOVOLTAIC-SCIENCE-AND-ENGINEERING-CONFERENCE (PVSEC-9) - 11-15 NOVEMBER, 1996 MIYAZAKI, JAPAN - SEAGAIA CONVENTION COMPLEX WORLD CONVENTION CENTER SUMMIT - PREFACE, Solar energy materials and solar cells, 47(1-4), 1997, pp. 14-14