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Results: 1-25/31
Authors:
ADOMAVICIUS R
KROTKUS A
LEON R
JAGADISH C
Citation: R. Adomavicius et al., URBACH TAIL IN INP WITH NANOMETER METALLIC PRECIPITATES, Physica status solidi. a, Applied research, 168(2), 1998, pp. 475-477
Authors:
KROTKUS A
REKLAITIS A
GEIZUTIS A
ASCHE M
Citation: A. Krotkus et al., VOLTAGE SWITCHING AND OSCILLATIONS IN A SINGLE BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODE, Journal of applied physics, 84(7), 1998, pp. 3980-3985
Authors:
KROTKUS A
HOFFMANN D
LUDWIG R
DIEZ S
Citation: A. Krotkus et al., OPTICAL-SAMPLING TECHNIQUE FOR FAST ELECTROOPTIC DEVICES, Electronics Letters, 34(19), 1998, pp. 1877-1879
Authors:
GEIZUTIS A
KROTKUS A
REKLAITIS A
ASCHE M
Citation: A. Geizutis et al., PICOSECOND SWITCHING DUE TO ELECTRON-TUNNELING AND AVALANCHE IN GAAS ALXGA1-XAS DIODE/, Electronics Letters, 34(14), 1998, pp. 1434-1436
Authors:
KROTKUS A
PACEBUTAS V
KAVALIAUSKAS J
SUBACIUS I
GRIGORAS K
Citation: A. Krotkus et al., LIGHT TRAPPING EFFECT IN SILICON-WAFERS WITH ANODICALLY ETCHED SURFACES, Applied physics A: Materials science & processing, 64(4), 1997, pp. 357-360
Authors:
KROTKUS A
GRIGORAS K
PACEBUTAS V
BARSONY I
VAZSONYI E
FRIED M
SZLUFCIK J
NIJS J
LEVYCLEMENT C
Citation: A. Krotkus et al., EFFICIENCY IMPROVEMENT BY POROUS SILICON COATING OF MULTICRYSTALLINE SOLAR-CELLS, Solar energy materials and solar cells, 45(3), 1997, pp. 267-273
Authors:
KROTKUS A
REKLAITIS A
GEIZUTIS A
ASCHE M
STASCH R
Citation: A. Krotkus et al., CURRENT INSTABILITY IN THE SINGLE BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODE, Physica status solidi. b, Basic research, 204(1), 1997, pp. 504-506
Authors:
JASINSKI J
LILIENTALWEBER Z
WASHBURN J
TAN HH
JAGADISH C
KROTKUS A
MARCINKEVICIUS S
KAMINSKA M
Citation: J. Jasinski et al., STRUCTURAL, ELECTRICAL, AND OPTICAL STUDIES OF GAAS IMPLANTED WITH MEV AS OR GA IONS, Journal of electronic materials, 26(5), 1997, pp. 449-458
Authors:
PACEBUTAS V
GRIGORAS K
KROTKUS A
Citation: V. Pacebutas et al., POROUS SILICON APPLICATIONS IN SOLAR-CELL TECHNOLOGY, Physica scripta. T, T69, 1997, pp. 255-258
Authors:
MARCINKEVICIUS S
KROTKUS A
VISELGA R
OLIN U
JAGADISH C
Citation: S. Marcinkevicius et al., NONTHERMAL PHOTOEXCITED ELECTRON DISTRIBUTIONS IN NONSTOICHIOMETRIC GAAS, Semiconductor science and technology, 12(4), 1997, pp. 396-400
Authors:
STREHLKE S
SARTI D
KROTKUS A
GRIGORAS K
LEVYCLEMENT C
Citation: S. Strehlke et al., THE POROUS SILICON EMITTER CONCEPT APPLIED TO MULTICRYSTALLINE SILICON SOLAR-CELLS, Thin solid films, 297(1-2), 1997, pp. 291-295
Authors:
REKLAITIS A
STASCH R
ASCHE M
HEY R
KROTKUS A
SCHOLL E
Citation: A. Reklaitis et al., DYNAMICS OF THE SINGLE BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODE, Journal of applied physics, 82(4), 1997, pp. 1706-1710
Authors:
TAN HH
JAGADISH C
KORONA KP
JASINSKI J
KAMINSKA M
VISELGA R
MARCINKEVICIUS S
KROTKUS A
Citation: Hh. Tan et al., ION-IMPLANTED GAAS FOR SUBPICOSECOND OPTOELECTRONIC APPLICATIONS, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 636-642
Authors:
STALNIONIS A
ADOMAVICIUS R
KROTKUS A
MARCINKEVICIUS S
LEON R
JAGADISH C
Citation: A. Stalnionis et al., TRANSIENT PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE INP-CU, Acta Physica Polonica. A, 90(5), 1996, pp. 931-934
Authors:
KORONA KP
JASINSKI J
KURPIEWSKI A
KAMINSKA M
JAGADISH C
TAN HH
KROTKUS A
MARCINKEVICIUS S
Citation: Kp. Korona et al., ULTRAFAST CARRIER TRAPPING AND HIGH-RESISTIVITY OF MEV ENERGY ION-IMPLANTED GAAS, Acta Physica Polonica. A, 90(4), 1996, pp. 851-854
Authors:
GRIGORAS K
KROTKUS A
PACEBUTAS V
KAVALIAUSKAS J
SIMKIENE I
Citation: K. Grigoras et al., ENHANCED LIGHT-ABSORPTION IN ANODICALLY ETCHED SILICON-WAFERS, Thin solid films, 276(1-2), 1996, pp. 228-230
Authors:
MARCINKEVICIUS S
KROTKUS A
ADOMAVICIUS R
LEON R
JAGADISH C
Citation: S. Marcinkevicius et al., CARRIER DYNAMICS IN INP WITH METALLIC PRECIPITATES, Applied physics letters, 69(23), 1996, pp. 3554-3556
Authors:
MARCINKEVICIUS S
KROTKUS A
JASUTIS V
BERTULIS K
TAN HH
JAGADISH C
KAMINSKA M
Citation: S. Marcinkevicius et al., TIME AND SPATIALLY-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF NONSTOICHIOMETRIC GAAS, Applied physics letters, 68(3), 1996, pp. 397-399
Authors:
JAGADISH C
TAN HH
KROTKUS A
MARCINKEVICIUS S
KORONA KP
KAMINSKA M
Citation: C. Jagadish et al., ULTRAFAST CARRIER TRAPPING IN HIGH-ENERGY ION-IMPLANTED GALLIUM-ARSENIDE, Applied physics letters, 68(16), 1996, pp. 2225-2227
Authors:
KROTKUS A
MARCINKEVICIUS S
JASINSKI J
KAMINSKA M
TAN HH
JAGADISH C
Citation: A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS (VOL 66, PG 3304, 1995), Applied physics letters, 68(12), 1996, pp. 1735-1735
Authors:
JASINSKI J
KURPIEWSKI A
KORONA K
KAMINSKA M
PALCZEWSKA M
KROTKUS A
MARCINKIEVICIUS S
LILIENTALWEBER Z
TAN HH
JAGADISH C
Citation: J. Jasinski et al., ROLE OF ARSENIC ANTISITE DEFECT IN NONSTOICHIOMETRIC GALLIUM-ARSENIDE, Acta Physica Polonica. A, 88(4), 1995, pp. 747-750
Authors:
KROTKUS A
MARCINKEVICIUS S
JAGADISH C
KAMINSKA M
Citation: A. Krotkus et al., FEMTOSECOND ELECTRON RELAXATION IN NONSTOICHIOMETRIC GAAS AND INGAAS, Journal of luminescence, 66-7(1-6), 1995, pp. 455-461
Authors:
PACEBUTAS V
KROTKUS A
SIMKIENE I
VISELGA R
Citation: V. Pacebutas et al., ELECTRIC AND PHOTOELECTRIC PROPERTIES OF DIODE STRUCTURES IN POROUS SILICON, Journal of applied physics, 77(6), 1995, pp. 2501-2507
Authors:
JASUTIS V
SIMKIENE I
KROTKUS A
Citation: V. Jasutis et al., ELECTRON-BEAM-INDUCED CONDUCTIVITY MEASUREMENTS ON POROUS SILICON-BASED STRUCTURES, Applied physics letters, 67(9), 1995, pp. 1259-1261
HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES
Authors:
JAGADISH C
TAN HH
JASINSKI J
KAMINSKA M
PALCZEWSKA M
KROTKUS A
MARCINKEVICIUS S
Citation: C. Jagadish et al., HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES, Applied physics letters, 67(12), 1995, pp. 1724-1726