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Results: 1-25/46
Authors:
Singh, R
Arora, SK
Kanjilal, D
Citation: R. Singh et al., Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode, MAT SC S PR, 4(5), 2001, pp. 425-432
Authors:
Padiyan, DP
Muthukrishnan, C
Ethilton, SJ
Mohanlal, SK
Dhanuskodi, S
Kanjilal, D
Asokan, K
Citation: Dp. Padiyan et al., Effect of heavy ion irradiation in RbKBrCl quaternary system: EPR study ofradiation induced defects, RADIAT EFF, 154(2), 2001, pp. 141-149
Authors:
Singh, R
Arora, SK
Singh, JP
Tyagi, R
Agarwal, SK
Kanjilal, D
Citation: R. Singh et al., Experimental investigation of 200 MeV Ag-107(14+) ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements, MAT SCI E B, 86(3), 2001, pp. 228-231
Authors:
Singh, JP
Singh, R
Mishra, NC
Ganesan, V
Kanjilal, D
Citation: Jp. Singh et al., Nanoscale defect formation on InP surface by swift gold ion impact, NUCL INST B, 179(1), 2001, pp. 37-41
Authors:
Narayanan, KL
Yamaguchi, M
Dharmarasu, N
Kojima, N
Kanjilal, D
Citation: Kl. Narayanan et al., Low energy ion implantation and high energy heavy ion irradiation in C-60 films, NUCL INST B, 178, 2001, pp. 301-304
Authors:
Tripathi, A
Singh, JP
Ahuja, R
Dutt, RN
Kanjilal, D
Guha, A
Biswas, A
Raychaudhuri, AK
Citation: A. Tripathi et al., Development of an in situ ultra-high-vacuum scanning tunneling microscope in the beamline of the 15 MV tandem accelerator for studies of surface modification by a swift heavy ion beam, REV SCI INS, 72(10), 2001, pp. 3884-3890
Authors:
Singh, JP
Singh, R
Mishra, NC
Kanjilal, D
Ganesan, V
Citation: Jp. Singh et al., Temperature-dependent roughness of electronically excited InP surfaces, J APPL PHYS, 90(12), 2001, pp. 5968-5972
Authors:
Sarkar, A
Ghosh, S
Barua, P
Joshi, R
Ahuja, R
Rao, S
Krishnan, SA
Malyadri, AJ
Kumar, R
Gargari, S
Chopra, S
Kanjilal, D
Datta, SK
Roy, A
Bhowmik, RK
Tilbrook, IR
Clifft, BE
Citation: A. Sarkar et al., Single-gap multi-harmonic buncher for NSC pelletron, I J PA PHYS, 39(1-2), 2001, pp. 15-19
Authors:
Kanjilal, D
Madhu, T
Rodrigues, GO
Rao, UK
Safvan, CP
Roy, A
Citation: D. Kanjilal et al., Development of a low energy ion beam facility at NSC, I J PA PHYS, 39(1-2), 2001, pp. 25-28
Authors:
Gargari, S
Chopra, S
Joshi, R
Ojha, S
Sota, M
Barua, P
Patel, V
Prasad, J
Kumar, R
Singh, B
Panwar, NS
Singh, MP
Datta, SK
Kanjilal, D
Citation: S. Gargari et al., Vacuum leak problem in low energy of pelletron, I J PA PHYS, 39(1-2), 2001, pp. 78-80
Authors:
Chopra, S
Pawar, NS
Singh, MP
Kumar, R
Prasad, J
Patel, VP
Pal, R
Kumar, B
Ojha, S
Sota, M
Barua, P
Gargari, S
Joshi, R
Kanjilal, D
Datta, SK
Citation: S. Chopra et al., Improvement in gas stripping capability by installation of turbo molecularpump system in the terminal of 15 UD pelletron, I J PA PHYS, 39(1-2), 2001, pp. 84-86
Authors:
Joshi, R
Patel, V
Barua, P
Sota, M
Gargari, S
Panwar, NS
Singh, B
Singh, MP
Kumar, R
Prasad, J
Chopra, S
Datta, SK
Kanjilal, D
Citation: R. Joshi et al., Modifications and developments done for the problems encountered in NSC pelletron, I J PA PHYS, 39(1-2), 2001, pp. 87-95
Authors:
Jayavel, P
Asokan, K
Kanjilal, D
Kumar, J
Citation: P. Jayavel et al., Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes, MAT SC S PR, 3(3), 2000, pp. 195-199
Authors:
Singh, R
Arora, SK
Singh, JP
Singh, F
Kanjilal, D
Citation: R. Singh et al., Effect of swift heavy ion irradiation on the electrical characteristics ofAg/n-Si Schottky diode, I J ENG M S, 7(5-6), 2000, pp. 298-302
Authors:
Singh, JP
Mishra, NC
Singh, R
Singh, F
Ganesan, V
Kanjilal, D
Citation: Jp. Singh et al., Ion beam induced mass transport and correlated structure formation on semiconductor surfaces, I J ENG M S, 7(5-6), 2000, pp. 310-319
Authors:
Narsale, AM
Damle, AR
Ali, YP
Kanjilal, D
Arora, BM
Shah, AP
Lokhre, SG
Salvi, VP
Citation: Am. Narsale et al., Annealing effects on electrical characteristics of 100 MeV Si-28 implantation in GaAs, J MAT S-M E, 11(5), 2000, pp. 439-443
Authors:
Banerjee, T
Kumar, R
Kanjilal, D
Ramasamy, S
Citation: T. Banerjee et al., Fluctuation induced conductivity studies of 100 MeV oxygen ion irradiated Pb doped Bi-2223 superconductors, PHYSICA C, 341, 2000, pp. 1185-1186
Authors:
Singh, R
Arora, SK
Tyagi, R
Agarwal, SK
Kanjilal, D
Citation: R. Singh et al., Temperature dependence of current-voltage characteristics of Au/n-GaAs epitaxial Schottky diode, B MATER SCI, 23(6), 2000, pp. 471-474
Authors:
Damle, AR
Narsale, AM
Ali, YP
Arora, BM
Gokhale, MR
Kanjilal, D
Salvi, VP
Citation: Ar. Damle et al., Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) Si-28 ions, NUCL INST B, 168(2), 2000, pp. 229-236
Authors:
Pradhan, AK
Gu, GD
Nakao, K
Koshizuka, N
Kanjilal, D
Citation: Ak. Pradhan et al., Enhancement of interlayer coupling in Bi2Sr2CaCu2O8+y crystals upon heavy-ion irradiation, PHYS REV B, 61(21), 2000, pp. 14374-14377
Authors:
Singh, JP
Tripathi, A
Kanjilal, D
Citation: Jp. Singh et al., In situ STM studies of HOPG surface after 200 MeV Au+13 ion irradiation, VACUUM, 57(3), 2000, pp. 319-325
Authors:
Banerjee, T
Viswanath, RN
Kanjilal, D
Kumar, R
Ramasamy, S
Citation: T. Banerjee et al., Positron lifetime studies of 100-MeV oxygen irradiated Pb-doped Bi-2223 superconductors, SOL ST COMM, 114(12), 2000, pp. 655-659
Authors:
Singh, JP
Singh, R
Kanjilal, D
Mishra, NC
Ganesan, V
Citation: Jp. Singh et al., Electronic excitation induced mass transport on 200 MeV Ag-107(+14) ion irradiated Si surface, J APPL PHYS, 87(6), 2000, pp. 2742-2746
Authors:
Kumar, R
Arora, SK
Kanjilal, D
Mehta, GK
Bathe, R
Date, SK
Shinde, SR
Saraf, LV
Ogale, SB
Patil, SI
Citation: R. Kumar et al., Swift heavy ion irradiation effects on transport properties of epitaxial thin films of La1-xCaxMnO3, RADIAT EFF, 147(3), 1999, pp. 187-197
Authors:
Narayan, H
Samanta, SB
Agrawal, HM
Kushwaha, RPS
Kanjilal, D
Sharma, SK
Narlikar, AV
Citation: H. Narayan et al., An SEM and STM investigation of surface smoothing in 130 MeV Si-irradiatedmetglass MG2705M, J PHYS-COND, 11(13), 1999, pp. 2679-2688