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Results: 1-19 |
Results: 19
Recent development of diamond microtip field emitter cathodes and devices
Authors: Kang, WP Davidson, JL Wisitsora-at, A Kerns, DV Kerns, S
Citation: Wp. Kang et al., Recent development of diamond microtip field emitter cathodes and devices, J VAC SCI B, 19(3), 2001, pp. 936-941
Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer
Authors: Wisitsora-at, A Kang, WP Davidson, JL Kerns, DV Kerns, SE
Citation: A. Wisitsora-at et al., Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer, J VAC SCI B, 19(3), 2001, pp. 971-974
Size effect on SEB cross-section of VDMOSFETs
Authors: Salame, C Hoffmann, A Mialhe, P Charles, JP Kerns, DV Kerns, SE
Citation: C. Salame et al., Size effect on SEB cross-section of VDMOSFETs, RADIAT EFF, 152(3), 2000, pp. 191-200
Circuit technique for threshold voltage stabilization using substrate biasin total dose environments
Authors: Shreedhara, JK Barnaby, HJ Bhuva, BL Kerns, DV Kerns, SE
Citation: Jk. Shreedhara et al., Circuit technique for threshold voltage stabilization using substrate biasin total dose environments, IEEE NUCL S, 47(6), 2000, pp. 2557-2560
Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model
Authors: Lahbabi, M Ahaitouf, A Abarkan, E Fliyou, M Hoffmann, A Charles, JP Bhuva, BL Kerns, SE Kerns, DV
Citation: M. Lahbabi et al., Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model, APPL PHYS L, 77(20), 2000, pp. 3182-3184
Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding technique
Authors: Kang, WP Wisitsora-at, A Davidson, JL Howell, M Kerns, DV Li, Q Xu, F
Citation: Wp. Kang et al., Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding technique, J VAC SCI B, 17(2), 1999, pp. 740-743
Diamond as an active sensor material
Authors: Davidson, JL Kang, WP Gurbuz, Y Holmes, KC Davis, LG Wisitsora-at, A Kerns, DV Eidson, RL Henderson, T
Citation: Jl. Davidson et al., Diamond as an active sensor material, DIAM RELAT, 8(8-9), 1999, pp. 1741-1747
Field emission enhancement of diamond tips utilizing boron doping and surface treatment
Authors: Wisitsora-at, A Kang, WP Davidson, JL Gurbuz, Y Kerns, DV
Citation: A. Wisitsora-at et al., Field emission enhancement of diamond tips utilizing boron doping and surface treatment, DIAM RELAT, 8(7), 1999, pp. 1220-1224
A new diode-based carbon monoxide gas sensor utilizing Pt-SnOx/diamond
Authors: Gurbuz, Y Kang, WP Davidson, JL Kerns, DV
Citation: Y. Gurbuz et al., A new diode-based carbon monoxide gas sensor utilizing Pt-SnOx/diamond, SENS ACTU-B, 56(1-2), 1999, pp. 151-154
Efficient electron emitter utilizing boron-doped diamond tips with sp(2) content
Authors: Wisitsora-at, A Kang, WP Davidson, JL Li, Q Xu, JF Kerns, DV
Citation: A. Wisitsora-at et al., Efficient electron emitter utilizing boron-doped diamond tips with sp(2) content, APPL SURF S, 146(1-4), 1999, pp. 280-286
Light emission studies of total dose and hot carrier effects on silicon junctions
Authors: Kerns, S Jiang, D de la Bardonnie, M Pelanchon, F Barnaby, H Kerns, DV Schrimpf, RD Bhuva, BL Mialhe, P Hoffmann, A Charles, JP
Citation: S. Kerns et al., Light emission studies of total dose and hot carrier effects on silicon junctions, IEEE NUCL S, 46(6), 1999, pp. 1804-1808
On the aging of avalanche light emission from silicon junctions
Authors: de la Bardonnie, M Jiang, D Kerns, SE Kerns, DV Mialhe, P Charles, JP Hoffman, A
Citation: M. De La Bardonnie et al., On the aging of avalanche light emission from silicon junctions, IEEE DEVICE, 46(6), 1999, pp. 1234-1239
Current conduction mechanism and gas adsorption effects on device parameters of the Pt/SnOx/diamond gas sensor
Authors: Gurbuz, Y Kang, WP Davidson, JL Kerns, DV
Citation: Y. Gurbuz et al., Current conduction mechanism and gas adsorption effects on device parameters of the Pt/SnOx/diamond gas sensor, IEEE DEVICE, 46(5), 1999, pp. 914-920
A multimechanism model for photon generation by silicon junctions in avalanche breakdown
Authors: Akil, N Kerns, SE Kerns, DV Hoffmann, A Charles, JP
Citation: N. Akil et al., A multimechanism model for photon generation by silicon junctions in avalanche breakdown, IEEE DEVICE, 46(5), 1999, pp. 1022-1028
The effects of structural properties on gas sensing performance of the metal-insulator-semiconductor hydrogen gas sensor
Authors: Gurbuz, Y Kang, WP Davidson, JL Kerns, DV
Citation: Y. Gurbuz et al., The effects of structural properties on gas sensing performance of the metal-insulator-semiconductor hydrogen gas sensor, J ELCHEM SO, 146(1), 1999, pp. 387-391
A PECVD diamond device for chemical gas sensing applications
Authors: Gurbuz, Y Kang, WP Davidson, JL Kerns, DV
Citation: Y. Gurbuz et al., A PECVD diamond device for chemical gas sensing applications, DIAM RELAT, 7(11-12), 1998, pp. 1723-1726
High-temperature tolerant diamond diode for carbon monoxide gas detection
Authors: Gurbuz, Y Kang, WP Davidson, JL Kerns, DV
Citation: Y. Gurbuz et al., High-temperature tolerant diamond diode for carbon monoxide gas detection, J APPL PHYS, 84(12), 1998, pp. 6935-6936
Threshold voltage stabilization in radiation environments
Authors: Kerns, DV Barnaby, HJ Kerns, SE
Citation: Dv. Kerns et al., Threshold voltage stabilization in radiation environments, IEEE NUCL S, 45(6), 1998, pp. 3175-3178
Total-dose radiation-hard diamond-based hydrogen sensor
Authors: Kerns, DV Kang, WP Davidson, JL Zhou, Q Gurbuz, Y Kerns, SE
Citation: Dv. Kerns et al., Total-dose radiation-hard diamond-based hydrogen sensor, IEEE NUCL S, 45(6), 1998, pp. 2799-2804
Risultati: 1-19 |