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Results:
1-23
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Results: 23
Authors:
Tsubouchi, N
Chayahara, A
Mokuno, Y
Kinomura, A
Horino, Y
Citation: N. Tsubouchi et al., Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C-SiC heteroepitaxial growth on Si (100), J VAC SCI A, 19(4), 2001, pp. 1882-1886
Authors:
Kawatsura, K
Takeshima, N
Takahiro, K
Mokuno, Y
Horino, Y
Kinomura, A
Chayahara, A
Tsubouchi, N
Sekioka, T
Terasawa, M
Citation: K. Kawatsura et al., Chemical state analysis of Cu,Cu2O and CuO with WDX using an ion microbeam, NUCL INST B, 181, 2001, pp. 128-133
Authors:
Abo, S
Mizutani, M
Nakayama, K
Takaoka, T
Iwamatsu, T
Yamaguchi, Y
Maegawa, S
Nishimura, T
Kinomura, A
Horino, Y
Takai, M
Citation: S. Abo et al., Suppression of floating body effects in SOI-MOSFET studied using nuclear microprobes, NUCL INST B, 181, 2001, pp. 320-323
Authors:
Williams, JS
Ridgway, MC
Conway, MJ
Wong-Leung, J
Zhu, XF
Petravic, M
Fortuna, F
Ruault, MO
Bernas, H
Kinomura, A
Nakano, Y
Hayashi, Y
Citation: Js. Williams et al., Interaction of defects and metals with nanocavities in silicon, NUCL INST B, 178, 2001, pp. 33-43
Authors:
Kinomura, A
Chayahara, A
Tsubouchi, N
Heck, C
Horino, Y
Miyagawa, Y
Citation: A. Kinomura et al., Movement of defects and atoms during ion beam induced crystallization, NUCL INST B, 175, 2001, pp. 319-323
Authors:
Iwamatsu, T
Nakayama, K
Takaoka, H
Takai, M
Yamaguchi, Y
Maegawa, S
Inuishi, M
Kinomura, A
Horino, Y
Nishimura, T
Citation: T. Iwamatsu et al., Direct measurement of transient drain cuff rents in partially-depleted SOIN-channel MOSFETs using a nuclear microprobe for highly reliable device designs, JPN J A P 1, 39(4B), 2000, pp. 2236-2240
Authors:
Horino, Y
Chayahara, A
Kinomura, A
Tsubouchi, N
Heck, C
Abiko, K
Citation: Y. Horino et al., Formation of ultra high pure metal thin films by means of a dry process, MATER T JIM, 41(1), 2000, pp. 28-30
Authors:
Chayahara, A
Kinomura, A
Tsubouchi, N
Heck, C
Horino, Y
Citation: A. Chayahara et al., Formation of high purity films by negative ion beam sputtering using an ultra-high vacuum self-sputtering method, MATER T JIM, 41(1), 2000, pp. 31-33
Authors:
Tsubouchi, N
Chayahara, A
Kinomura, A
Heck, C
Horino, Y
Citation: N. Tsubouchi et al., Silicon carbide film growth using dual isotopical Si-28(-) and C-12(+) ionspecies, MATER T JIM, 41(1), 2000, pp. 34-36
Authors:
Kinomura, A
Takaki, S
Nakano, Y
Hayashi, Y
Horino, Y
Abiko, K
Citation: A. Kinomura et al., Neutron activation analysis of high-purity iron in comparison with chemical analysis, MATER T JIM, 41(1), 2000, pp. 61-66
Authors:
Tsubouchi, N
Chayahara, A
Kinomura, A
Horino, Y
Citation: N. Tsubouchi et al., Initial growth temperature of crystalline SiC by simultaneous irradiation of energetic Si-28(-) and C-12(+), REV SCI INS, 71(2), 2000, pp. 993-995
Authors:
Tsubouchi, N
Chayahara, A
Kinomura, A
Horino, Y
Citation: N. Tsubouchi et al., Initial growth of heteroepitaxial 3C-SiC on Si using energetic species, APPL PHYS L, 77(5), 2000, pp. 654-656
Authors:
Chun, SY
Chayahara, A
Kinomura, A
Tsubouchi, N
Heck, C
Horino, Y
Fukui, H
Citation: Sy. Chun et al., Macroparticle-free Ti-Al films by newly developed coaxial vacuum arc deposition, JPN J A P 2, 38(4B), 1999, pp. L467-L469
Authors:
Yukimura, K
Sano, M
Maruyama, T
Kurooka, S
Suzuki, Y
Chayahara, A
Kinomura, A
Horino, Y
Citation: K. Yukimura et al., Titanium nitride prepared by plasma-based titanium-ion implantation, J VAC SCI B, 17(2), 1999, pp. 840-844
Authors:
Tsubouchi, N
Enders, B
Chayahara, A
Kinomura, A
Heck, C
Horino, Y
Citation: N. Tsubouchi et al., Optical properties of carbon and carbon nitride films prepared by mass-separated energetic negative carbon and carbon nitrogen ions, J VAC SCI A, 17(4), 1999, pp. 2384-2388
Authors:
Takai, M
Nakayama, K
Takaoka, H
Iwamatsu, T
Yamaguchi, Y
Maegawa, S
Nishimura, T
Kinomura, A
Horino, Y
Citation: M. Takai et al., Reliability testing for the next generation of ULSI with SOI MOSFETs, NUCL INST B, 158(1-4), 1999, pp. 432-436
Authors:
Mokuno, Y
Horino, Y
Tadic, T
Terasawa, M
Kinomura, A
Chayahara, A
Tsubouchi, N
Citation: Y. Mokuno et al., WDX-PIXE analysis of low energy X-rays using a microbeam, NUCL INST B, 150(1-4), 1999, pp. 109-113
Authors:
Sano, M
Yukimura, K
Maruyama, T
Kurooka, S
Suzuki, Y
Chayahara, A
Kinomura, A
Horino, Y
Citation: M. Sano et al., Titanium nitride coating on implanted layer using titanium plasma based ion implantation, NUCL INST B, 148(1-4), 1999, pp. 37-41
Authors:
Enders, B
Heck, C
Tsubouchi, N
Chayahara, A
Kinomura, A
Horino, Y
Fujii, K
Citation: B. Enders et al., Low energy ion beam deposition with positive and negative ions experimentsto and modeling of subsurface growth, NUCL INST B, 148(1-4), 1999, pp. 143-148
Authors:
Kinomura, A
Chayahara, A
Tsubouchi, N
Horino, Y
Williams, JS
Citation: A. Kinomura et al., Activation energies for light ions in ion beam induced epitaxial crystallization, NUCL INST B, 148(1-4), 1999, pp. 370-374
Authors:
Kinomura, A
Williams, JS
Fujii, K
Citation: A. Kinomura et al., Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon, PHYS REV B, 59(23), 1999, pp. 15214-15224
Authors:
Wong-Leung, J
Williams, JS
Kinomura, A
Nakano, Y
Hayashi, Y
Eaglesham, DJ
Citation: J. Wong-leung et al., Diffusion and transient trapping of metals in silicon, PHYS REV B, 59(12), 1999, pp. 7990-7998
Authors:
Horino, Y
Chayahara, A
Tsubouchi, N
Heck, C
Kinomura, A
Abiko, K
Citation: Y. Horino et al., Formation of pure thin films by means of self-sputtering deposition, THIN SOL FI, 344, 1999, pp. 60-62
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