AAAAAA
Results:
1-16
|
Results: 16
Authors:
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Itoh, S
Nakano, K
Ishibashi, A
Klude, M
Hommel, D
Citation: M. Strassburg et al., A novel approach for improved green-emitting II-VI lasers, IEEE S T QU, 7(2), 2001, pp. 371-375
Authors:
Davies, JJ
Wolverson, D
Strauf, S
Michler, P
Gutowski, J
Klude, M
Ohkawa, K
Hommel, D
Tournie, E
Faurie, JP
Citation: Jj. Davies et al., Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe - art. no. 205206, PHYS REV B, 6420(20), 2001, pp. 5206
Authors:
Leonardi, K
Passow, T
Klude, M
Hommel, D
Citation: K. Leonardi et al., Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy, J CRYST GR, 227, 2001, pp. 650-654
Authors:
Klude, M
Passow, T
Kroger, R
Hommel, D
Citation: M. Klude et al., Electrically pumped lasing from CdSe quantum dots, ELECTR LETT, 37(18), 2001, pp. 1119-1120
Authors:
Klude, M
Hommel, D
Citation: M. Klude et D. Hommel, 560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs, APPL PHYS L, 79(16), 2001, pp. 2523-2525
Authors:
Klude, M
Fehrer, M
Hommel, D
Citation: M. Klude et al., High-power operation of ZnSe-based cw-laser diodes, PHYS ST S-A, 180(1), 2000, pp. 21-26
Authors:
Schulz, O
Strassburg, M
Pohl, UW
Bimberg, D
Itoh, S
Nakano, K
Ishibashi, A
Klude, M
Hommel, D
Citation: O. Schulz et al., Optimised implantation-induced disordering for lowering the threshold current density of II-VI laser diodes, PHYS ST S-A, 180(1), 2000, pp. 213-216
Authors:
Strauf, S
Michler, P
Gutowski, J
Klude, M
Hommel, D
Citation: S. Strauf et al., Shallow donors in ultrathin nitrogen-doped ZnSe layers - a novel or a disregarded compensation mechanism in II-VI device structures?, J CRYST GR, 214, 2000, pp. 497-501
Authors:
Klude, M
Fehrer, M
Grossmann, V
Hommel, D
Citation: M. Klude et al., Influence of driving conditions on the stability of ZnSe-based cw-laser diodes, J CRYST GR, 214, 2000, pp. 1040-1044
Authors:
Legge, M
Bacher, G
Forchel, A
Klude, M
Fehrer, M
Hommel, D
Citation: M. Legge et al., Low threshold II-VI laser diodes with transversal and longitudinal single-mode emission, J CRYST GR, 214, 2000, pp. 1045-1048
Authors:
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Klude, M
Hommel, D
Citation: M. Strassburg et al., Lateral-index-guided ZnCdSSe lasers, J CRYST GR, 214, 2000, pp. 1054-1057
Authors:
Wenisch, H
Fehrer, M
Klude, M
Ohkawa, K
Hommel, D
Citation: H. Wenisch et al., Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes, J CRYST GR, 214, 2000, pp. 1075-1079
Authors:
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Klude, M
Hommel, D
Citation: M. Strassburg et al., Low threshold current densities for II-VI lasers, ELECTR LETT, 36(10), 2000, pp. 878-879
Authors:
Wenisch, H
Behringer, M
Fehrer, M
Klude, M
Isemann, A
Ohkawa, K
Hommel, D
Citation: H. Wenisch et al., Device properties of homo- and heteroepitaxial ZnSe-based laser diodes, JPN J A P 1, 38(4B), 1999, pp. 2590-2597
Authors:
Wenisch, H
Fehrer, M
Klude, M
Isemann, A
Grossmann, V
Heinke, H
Ohkawa, K
Hommel, D
Prokesch, M
Rinas, U
Hartmann, H
Citation: H. Wenisch et al., Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates, J CRYST GR, 202, 1999, pp. 933-937
Authors:
Legge, M
Bacher, G
Forchel, A
Klude, M
Fehrer, M
Hommel, D
Citation: M. Legge et al., Green emitting DFB laser diodes based on ZnSe, ELECTR LETT, 35(9), 1999, pp. 718-720
Risultati:
1-16
|