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Results: 1-25/26
Authors:
LAVIA F
ALBERTI A
RAINERI V
RAVESI S
RIMINI E
Citation: F. Lavia et al., THERMAL-STABILITY OF THIN COSI2 LAYERS ON POLYSILICON IMPLANTED WITH AS, BF2, AND SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1129-1136
Authors:
IACONA F
RAINERI V
LAVIA F
RIMINI E
Citation: F. Iacona et al., ROUGHNESS OF THERMAL OXIDE LAYERS GROWN ON ION-IMPLANTED SILICON-WAFERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 619-627
Authors:
IACONA F
RAINERI V
LAVIA F
TERRASI A
RIMINI E
Citation: F. Iacona et al., ARSENIC REDISTRIBUTION AT THE SIO2 SI INTERFACE DURING OXIDATION OF IMPLANTED SILICON/, Physical review. B, Condensed matter, 58(16), 1998, pp. 10990-10999
Authors:
TERRASI A
RIMINI E
RAINERI V
IACONA F
LAVIA F
COLONNA S
MOBILIO S
Citation: A. Terrasi et al., PRECIPITATION OF AS IN THERMALLY OXIDIZED ION-IMPLANTED SI CRYSTALS, Applied physics letters, 73(18), 1998, pp. 2633-2635
Authors:
GRIMALDI MG
LAVIA F
RAINERI V
Citation: Mg. Grimaldi et al., REDUCTION OF THE C49-C54 TISI2 PHASE-TRANSFORMATION TEMPERATURE BY REACTIVE TI DEPOSITION, Europhysics letters, 40(5), 1997, pp. 581-586
Authors:
GALVAGNO G
LAFERLA A
LAVIA F
RAINERI V
GASPAROTTO A
CARNERA A
RIMINI E
Citation: G. Galvagno et al., HOLE MOBILITY IN ALUMINUM IMPLANTED SILICON, Semiconductor science and technology, 12(11), 1997, pp. 1433-1437
Authors:
GRIMALDI MG
LAVIA F
RAINERI V
BOCELLI S
GALLI M
MARABELLI F
BONOLI F
IANNUZZI M
MIGLIO L
Citation: Mg. Grimaldi et al., KINETICS OF THE C49-C54 PHASE-TRANSITION IN TISI2 - NEW INDICATIONS FROM SHEET RESISTANCE, INFRARED-SPECTROSCOPY AND MOLECULAR-DYNAMICS SIMULATIONS, Microelectronic engineering, 37-8(1-4), 1997, pp. 441-448
Authors:
LAVIA F
ALBERTI A
RAINERI V
RAVESI S
RIMINI E
Citation: F. Lavia et al., THERMAL-STABILITY OF THIN COSI2 LAYERS GROWN ON AMORPHOUS-SILICON, Microelectronic engineering, 37-8(1-4), 1997, pp. 475-481
Authors:
TERRASI A
LAVIA F
DACAPITO F
MOBILIO S
Citation: A. Terrasi et al., EXAFS INVESTIGATION OF CO SITES IN COSI2 FILM GROWN BY ION-BEAM-ASSISTED DEPOSITION, Microelectronic engineering, 37-8(1-4), 1997, pp. 491-497
Authors:
LAVIA F
RIMINI E
Citation: F. Lavia et E. Rimini, ELECTRICAL CHARACTERIZATION OF ULTRA-SHALLOW JUNCTIONS FORMED BY DIFFUSION FROM A COSI2 LAYER, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 526-534
Authors:
SPINELLA C
RAINERI V
LAVIA F
CAMPISANO SU
Citation: C. Spinella et al., 2-DIMENSIONAL JUNCTION PROFILING BY SELECTIVE CHEMICAL ETCHING - APPLICATIONS TO ELECTRON DEVICE CHARACTERIZATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 414-420
Authors:
LOMBARDO S
RAINERI V
LAVIA F
IACONA F
CAMPISANO SU
PINTO A
WARD P
Citation: S. Lombardo et al., GE ION-IMPLANTATION IN SI FOR THE FABRICATION OF SI GEXSI1-X HETEROJUNCTION TRANSISTORS/, Materials chemistry and physics, 46(2-3), 1996, pp. 156-160
Authors:
RAINERI V
LOMBARDO S
IACONA F
LAVIA F
Citation: V. Raineri et al., ATOMIC-FORCE MICROSCOPY ON SIO2 LAYERS GROWN ON GE IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 482-485
Authors:
LOMBARDO S
LARSEN KK
RAINERI V
LAVIA F
CAMPISANO SU
LAGOMARSINO S
KAZIMIROV A
Citation: S. Lombardo et al., CHARACTERIZATION OF C COIMPLANTED GEXSI1-X EPITAXIAL LAYERS FORMED BYHIGH-DOSE GE ION-IMPLANTATION IN (100)SI, Journal of applied physics, 79(7), 1996, pp. 3456-3463
Authors:
LOMBARDO S
CACCIATO A
LARSEN KK
RAINERI V
LAVIA F
PRIVITERA V
CAMPISANO SU
Citation: S. Lombardo et al., HIGH-TEMPERATURE ANNEALING EFFECTS ON THE ELECTRICAL CHARACTERISTICS OF C IMPLANTED SI, Journal of applied physics, 79(7), 1996, pp. 3464-3469
Authors:
LAVIA F
SPINELLA C
RIMINI E
Citation: F. Lavia et al., ARSENIC AND BORON-DIFFUSION IN SILICON FROM IMPLANTED COBALT SILICIDELAYERS, Semiconductor science and technology, 10(10), 1995, pp. 1362-1367
Authors:
RAVESI S
LAVIA F
RAINERI V
SPINELLA C
Citation: S. Ravesi et al., IMPROVED THERMAL-STABILITY OF COBALT SILICIDE FORMED BY ION-BEAM-ASSISTED DEPOSITION ON POLYSILICON, Applied surface science, 91(1-4), 1995, pp. 19-23
Authors:
GALVAGNO G
LAVIA F
SAGGIO MG
LAMANTIA A
RIMINI E
Citation: G. Galvagno et al., 2-DIMENSIONAL ALUMINUM DIFFUSION IN SILICON - EXPERIMENTAL RESULTS AND SIMULATIONS, Journal of the Electrochemical Society, 142(5), 1995, pp. 1585-1590
Authors:
LARSEN KK
LAVIA F
LOMBARDO S
RAINERI V
CAMPISANO SU
Citation: Kk. Larsen et al., SECONDARY DEFECT ANNIHILATION IN ION-BEAM PROCESSED SIXGE1-X LAYERS USING TITANIUM SILICIDE, Applied physics letters, 67(20), 1995, pp. 2931-2933
Authors:
LAVIA F
SPINELLA C
READER AH
DUCHATEAU JPWB
HAKVOORT RA
VANVEEN A
Citation: F. Lavia et al., STRUCTURE AND DEFECT CHARACTERIZATION OF EPITAXIAL COSI2 ON SI(001) FORMED USING AN AMORPHOUS CO75W25 SPUTTERED LAYER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(5), 1993, pp. 1807-1814
Authors:
LAVIA F
PRIVITERA V
SPINELLA C
RIMINI E
Citation: F. Lavia et al., STRESS-INDUCED PRECIPITATION OF DOPANTS DIFFUSED INTO SI FROM TISI2 AND COSI2 IMPLANTED LAYERS, Semiconductor science and technology, 8(7), 1993, pp. 1196-1203
Authors:
GALVAGNO G
LAVIA F
PRIOLO F
RIMINI E
Citation: G. Galvagno et al., DIFFUSION AND OUTDIFFUSION OF ALUMINUM IMPLANTED INTO SILICON, Semiconductor science and technology, 8(4), 1993, pp. 488-494
Authors:
BAERI P
GRIMALDI MG
LAVIA F
SPINELLA C
SPOTO G
Citation: P. Baeri et al., PULSED-LASER MELTING AND RESOLIDIFICATION OF METAL SILICIDE LAYERS, International journal of thermophysics, 14(3), 1993, pp. 383-396
Authors:
LAVIA F
SPINELLA C
READER AH
DUCHATEAU JPWB
HAKVOORT RA
VANVEEN A
Citation: F. Lavia et al., FORMATION AND CHARACTERIZATION OF EPITAXIAL COSI2, ON SI(001), Applied surface science, 73, 1993, pp. 108-116
Authors:
LAVIA F
RAVESI S
TERRASI A
SPINELLA C
Citation: F. Lavia et al., FORMATION AND CHARACTERIZATION OF SI COSI2,/SI EPITAXIAL HETEROSTRUCTURES/, Applied surface science, 73, 1993, pp. 135-140