Results: 1-25 | 26-31
Results: 1-25/31
A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON
Authors: HENRY MO CAMPION JD MCGUIGAN KG LIGHTOWLERS EC DOCARMO MC NAZARE MH
Citation: Mo. Henry et al., A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON, Semiconductor science and technology, 9(7), 1994, pp. 1375-1381
CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES
Authors: HIGGS V LIGHTOWLERS EC USAMI N SHIRAKI Y MINE T FUKATSU S
Citation: V. Higgs et al., CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 1070-1073
CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY
Authors: HIGGS V LIGHTOWLERS EC USAMI N MINE T FUKATSU S SHIRAKI Y
Citation: V. Higgs et al., CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY, Applied physics letters, 67(12), 1995, pp. 1709-1711
CHARACTERIZATION OF SI SI1-XGEX/SI QUANTUM-WELLS BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY/
Authors: HIGGS V LIGHTOWLERS EC XIAO X STURM JC
Citation: V. Higgs et al., CHARACTERIZATION OF SI SI1-XGEX/SI QUANTUM-WELLS BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY/, Applied physics letters, 64(5), 1994, pp. 607-609
CHARACTERIZATION OF THE 1117-MEV AND 1052-MEV OPTICAL-TRANSITIONS IN HEAT-TREATED SI
Authors: JEYANATHAN L DAVIES G LIGHTOWLERS EC
Citation: L. Jeyanathan et al., CHARACTERIZATION OF THE 1117-MEV AND 1052-MEV OPTICAL-TRANSITIONS IN HEAT-TREATED SI, Physical review. B, Condensed matter, 52(15), 1995, pp. 10923-10931
CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/
Authors: HIGGS V LIGHTOWLERS EC APETZ R VESCAN L
Citation: V. Higgs et al., CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/, Semiconductor science and technology, 12(4), 1997, pp. 409-412
ELECTRON-MUON DYNAMICS IN N-TYPE SILICON
Authors: HITTI B KREITZMAN SR ESTLE TL LICHTI RL LIGHTOWLERS EC
Citation: B. Hitti et al., ELECTRON-MUON DYNAMICS IN N-TYPE SILICON, Hyperfine interactions, 105(1-4), 1997, pp. 321-325
EXCITON SELF-TRAPPING AT AN ISOELECTRONIC CENTER IN SILICON
Authors: DAVIES G IQBAL MZ LIGHTOWLERS EC
Citation: G. Davies et al., EXCITON SELF-TRAPPING AT AN ISOELECTRONIC CENTER IN SILICON, Physical review. B, Condensed matter, 50(16), 1994, pp. 11520-11530
FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - UNIAXIAL-STRESS
Authors: KARASYUK VA THEWALT MLW AN S LIGHTOWLERS EC
Citation: Va. Karasyuk et al., FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - UNIAXIAL-STRESS, Physical review. B, Condensed matter, 56(24), 1997, pp. 15672-15684
FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - ZEEMAN-EFFECT
Authors: KARASYUK VA THEWALT MLW AN S LIGHTOWLERS EC KAMINSKII AS
Citation: Va. Karasyuk et al., FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - ZEEMAN-EFFECT, Physical review. B, Condensed matter, 54(15), 1996, pp. 10543-10558
GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: ZHANG J MARINOPOULOU A HARTUNG J LIGHTOWLERS EC ANWAR N PARRY G XIE MH MOKLER SM WU XD JOYCE BA
Citation: J. Zhang et al., GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1139-1141
HYDROGEN-RELATED LUMINESCENCE-CENTERS IN THERMALLY TREATED CZOCHRALSKI SILICON
Authors: LIGHTOWLERS EC NEWMAN RC TUCKER JH
Citation: Ec. Lightowlers et al., HYDROGEN-RELATED LUMINESCENCE-CENTERS IN THERMALLY TREATED CZOCHRALSKI SILICON, Semiconductor science and technology, 9(7), 1994, pp. 1370-1374
HYDROGEN-RELATED SHALLOW ISOELECTRONIC CENTERS IN RADIATION-DAMAGED SILICON
Authors: SAFONOV AN LIGHTOWLERS EC
Citation: An. Safonov et Ec. Lightowlers, HYDROGEN-RELATED SHALLOW ISOELECTRONIC CENTERS IN RADIATION-DAMAGED SILICON, Solid state communications, 93(5), 1995, pp. 457-457
HYDROGEN-RELATED SHALLOW THERMAL DONORS IN CZOCHRALSKI SILICON
Authors: MCQUAID SA NEWMAN RC LIGHTOWLERS EC
Citation: Sa. Mcquaid et al., HYDROGEN-RELATED SHALLOW THERMAL DONORS IN CZOCHRALSKI SILICON, Semiconductor science and technology, 9(9), 1994, pp. 1736-1739
HYDROGEN SOLUBILITY IN SILICON AND HYDROGEN DEFECTS PRESENT AFTER QUENCHING
Authors: BINNS MJ MCQUAID SA NEWMAN RC LIGHTOWLERS EC
Citation: Mj. Binns et al., HYDROGEN SOLUBILITY IN SILICON AND HYDROGEN DEFECTS PRESENT AFTER QUENCHING, Semiconductor science and technology, 8(10), 1993, pp. 1908-1911
INFRARED-ABSORPTION IN SILICON FROM SHALLOW THERMAL DONORS INCORPORATING HYDROGEN AND A LINK TO THE NL10 PARAMAGNETIC-RESONANCE SPECTRUM
Authors: NEWMAN RC TUCKER JH SEMALTIANOS NG LIGHTOWLERS EC GREGORKIEWICZ T ZEVENBERGEN IS AMMERLAAN CAJ
Citation: Rc. Newman et al., INFRARED-ABSORPTION IN SILICON FROM SHALLOW THERMAL DONORS INCORPORATING HYDROGEN AND A LINK TO THE NL10 PARAMAGNETIC-RESONANCE SPECTRUM, Physical review. B, Condensed matter, 54(10), 1996, pp. 6803-6806
INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON
Authors: PRITCHARD RE ASHWIN MJ TUCKER JH NEWMAN RC LIGHTOWLERS EC BINNS MJ MCQUAID SA FALSTER R
Citation: Re. Pritchard et al., INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON, Physical review. B, Condensed matter, 56(20), 1997, pp. 13118-13125
INTERSTITIAL-CARBON HYDROGEN INTERACTION IN SILICON
Authors: SAFONOV AN LIGHTOWLERS EC DAVIES G LEARY P JONES R OBERG S
Citation: An. Safonov et al., INTERSTITIAL-CARBON HYDROGEN INTERACTION IN SILICON, Physical review letters, 77(23), 1996, pp. 4812-4815
INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON
Authors: KARASYUK VA THEWALT MLW AN S LIGHTOWLERS EC
Citation: Va. Karasyuk et al., INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON, Physical review letters, 73(17), 1994, pp. 2340-2343
ISOELECTRONIC HYDROGEN-RELATED DEFECTS IN SILICON
Authors: KAMINSKII AS LAVROV EV DAVIES G LIGHTOWLERS EC SAFONOV AN
Citation: As. Kaminskii et al., ISOELECTRONIC HYDROGEN-RELATED DEFECTS IN SILICON, Semiconductor science and technology, 11(12), 1996, pp. 1796-1803
ISOTOPE DEPENDENCE OF THE LOWEST DIRECT ENERGY-GAP IN CRYSTALLINE GERMANIUM
Authors: DAVIES G LIGHTOWLERS EC HUI TS OZHOGIN V ITOH KM HANSEN WL HALLER EE
Citation: G. Davies et al., ISOTOPE DEPENDENCE OF THE LOWEST DIRECT ENERGY-GAP IN CRYSTALLINE GERMANIUM, Semiconductor science and technology, 8(12), 1993, pp. 2201-2204
LARGE PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI GE SUPERLATTICES/
Authors: HARTUNG J HIGGS V DAVIES G LIGHTOWLERS EC ARBETENGELS V WANG KL
Citation: J. Hartung et al., LARGE PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI GE SUPERLATTICES/, JPN J A P 1, 33(4B), 1994, pp. 2340-2343
LINE-SHAPE OF THE NO-PHONON LUMINESCENCE OF EXCITONS BOUND TO PHOSPHORUS IN CARBON-DOPED SILICON
Authors: SAFONOV AN DAVIES G LIGHTOWLERS EC
Citation: An. Safonov et al., LINE-SHAPE OF THE NO-PHONON LUMINESCENCE OF EXCITONS BOUND TO PHOSPHORUS IN CARBON-DOPED SILICON, Physical review. B, Condensed matter, 54(7), 1996, pp. 4409-4412
LUMINESCENCE ASSOCIATED WITH THE PRESENCE OF DISLOCATIONS IN SILICON
Authors: LIGHTOWLERS EC HIGGS V
Citation: Ec. Lightowlers et V. Higgs, LUMINESCENCE ASSOCIATED WITH THE PRESENCE OF DISLOCATIONS IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 665-672
LUMINESCENCE-CENTERS CONTAINING 2, 3 AND 4 HYDROGEN-ATOMS IN RADIATION-DAMAGED SILICON
Authors: SAFONOV AN LIGHTOWLERS EC
Citation: An. Safonov et Ec. Lightowlers, LUMINESCENCE-CENTERS CONTAINING 2, 3 AND 4 HYDROGEN-ATOMS IN RADIATION-DAMAGED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 251-254
Risultati: 1-25 | 26-31