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Results: 1-18 |
Results: 18
First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories
Authors: Courtot-Descharles, A Paillet, P Leray, JL Musseau, O
Citation: A. Courtot-descharles et al., First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories, MAT SC S PR, 3(1-2), 2000, pp. 143-148
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Worst-case bias during total dose irradiation of SOI transistors
Authors: Ferlet-Cavrois, V Colladant, T Paillet, P Leray, JL Musseau, O Schwank, JR Shaneyfelt, MR Pelloie, JL de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188
Spatial and spectral oxide trap distributions in power MOSFETs
Authors: Torres, A Flament, O Marcandella, C Musseau, O Leray, JL
Citation: A. Torres et al., Spatial and spectral oxide trap distributions in power MOSFETs, IEEE NUCL S, 47(3), 2000, pp. 587-591
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V)
Authors: Ferlet-Cavrois, V Paillet, P Musseau, O Leray, JL Faynot, O Raynaud, C Pelloie, JL
Citation: V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code
Authors: Leray, JL Paillet, P Ferlet-Cavrois, V Tavernier, C Belhaddad, K Penzin, O
Citation: Jl. Leray et al., Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code, IEEE NUCL S, 47(3), 2000, pp. 620-626
Density functional theory applied to the calculation of dielectric constant of low-k materials (vol 39, pg 279, 1999)
Authors: Courtot-Descharles, A Pires, F Paillet, P Leray, JL
Citation: A. Courtot-descharles et al., Density functional theory applied to the calculation of dielectric constant of low-k materials (vol 39, pg 279, 1999), MICROEL REL, 39(4), 1999, pp. 549-549
Density functional theory applied to the calculation of dielectric constant of low-k materials
Authors: Courtot-Descharles, A Pires, F Paillet, P Leray, JL
Citation: A. Courtot-descharles et al., Density functional theory applied to the calculation of dielectric constant of low-k materials, MICROEL REL, 39(2), 1999, pp. 279-284
Theoretical study using density functional theory of defects in amorphous silicon dioxide
Authors: Courtot-Descharles, A Paillet, P Leray, JL
Citation: A. Courtot-descharles et al., Theoretical study using density functional theory of defects in amorphous silicon dioxide, J NON-CRYST, 245, 1999, pp. 154-160
The role of electron transport and trapping in MOS total-dose modeling
Authors: Fleetwood, DM Winokur, PS Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., The role of electron transport and trapping in MOS total-dose modeling, IEEE NUCL S, 46(6), 1999, pp. 1519-1525
Considerations on isochronal anneal technique: from measurement to physics
Authors: Flament, O Paillet, P Leray, JL Fleetwood, DM
Citation: O. Flament et al., Considerations on isochronal anneal technique: from measurement to physics, IEEE NUCL S, 46(6), 1999, pp. 1526-1533
Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology.
Authors: Dentan, M Abbon, P Borgeaud, P Delagnes, E Fourches, N Lachartre, D Lugiez, F Paul, B Rouger, M Truche, R Blanc, JP Faynot, O Leroux, C Delevoye-Orsier, E Pelloie, JL de Pontcharra, J Flament, O Guebhard, JM Leray, JL Montaron, J Musseau, O Vitez, A Le Mouellic, C Corbiere, T Dantec, A Festes, G Martinez, J Rodde, K
Citation: M. Dentan et al., Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology., IEEE NUCL S, 46(4), 1999, pp. 822-828
Stability of trapped electrons in SiO2
Authors: Fleetwood, DM Winokur, PS Flament, O Leray, JL
Citation: Dm. Fleetwood et al., Stability of trapped electrons in SiO2, APPL PHYS L, 74(20), 1999, pp. 2969-2971
A review of buried oxide structures and SOI technologies
Authors: Leray, JL
Citation: Jl. Leray, A review of buried oxide structures and SOI technologies, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 145-231
Defects and radiation-induced charge-trapping phenomena in SiO2
Authors: Paillet, P Leray, JL
Citation: P. Paillet et Jl. Leray, Defects and radiation-induced charge-trapping phenomena in SiO2, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 723-780
Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge
Authors: Fleetwood, DM Winokur, PS Shaneyfelt, MR Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge, IEEE NUCL S, 45(6), 1998, pp. 2366-2374
Total dose induced latch in short channel NMOS/SOI transistors
Authors: Ferlet-Cavrois, V Quoizola, S Musseau, O Flament, O Leray, JL Pelloie, JL Raynaud, C Faynot, O
Citation: V. Ferlet-cavrois et al., Total dose induced latch in short channel NMOS/SOI transistors, IEEE NUCL S, 45(6), 1998, pp. 2458-2466
Impact of ion energy on single-event upset
Authors: Dodd, PE Musseau, O Shaneyfelt, MR Sexton, FW D'hose, C Hash, GL Martinez, M Loemker, RA Leray, JL Winokur, PS
Citation: Pe. Dodd et al., Impact of ion energy on single-event upset, IEEE NUCL S, 45(6), 1998, pp. 2483-2491
Risultati: 1-18 |