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Results: 23
Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
Authors:
Soderstrom, D
Lourdudoss, S
Wallnas, M
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy, EL SOLID ST, 4(6), 2001, pp. G53-G55
Authors:
Soderstrom, D
Lourdudoss, S
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Dopant diffusion and current-voltage studies on epitaxial InP codoped withRu and Fe, J ELEC MAT, 30(8), 2001, pp. 972-976
Authors:
Barrios, CA
Messmer, ER
Holmgren, M
Risberg, A
Halonen, J
Lourdudoss, S
Citation: Ca. Barrios et al., Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe, J ELEC MAT, 30(8), 2001, pp. 987-991
Authors:
Soderstrom, D
Lourdudoss, S
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Dopant diffusion and current-voltage studies on epitaxial InP codoped withRu and Re (vol 30, pg 972, 2001), J ELEC MAT, 30(11), 2001, pp. 1476-1476
Authors:
Gaarder, A
Marcinkevicius, S
Messmer, ER
Lourdudoss, S
Citation: A. Gaarder et al., Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence, J CRYST GR, 226(4), 2001, pp. 451-457
Authors:
Sun, YT
Messmer, ER
Soderstrom, D
Jahan, D
Lourdudoss, S
Citation: Yt. Sun et al., Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction, J CRYST GR, 225(1), 2001, pp. 9-15
Authors:
Soderstrom, D
Lourdudoss, S
Citation: D. Soderstrom et S. Lourdudoss, Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP, J APPL PHYS, 89(7), 2001, pp. 4004-4009
Authors:
Carlsson, C
Barrios, CA
Messmer, ER
Lovqvist, A
Halonen, J
Vukusic, J
Ghisoni, M
Lourdudoss, S
Larsson, A
Citation: C. Carlsson et al., Performance characteristics of buried heterostructure VCSELs using semi-insulating GaInP : Fe regrowth, IEEE J Q EL, 37(7), 2001, pp. 945-950
Authors:
Soderstrom, D
Lourdudoss, S
Wallnas, M
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy, J ELCHEM SO, 148(7), 2001, pp. G375-G378
Authors:
Sun, YT
Messmer, ER
Lourdudoss, S
Ahopelto, J
Rennon, S
Reithmaier, JP
Forchel, A
Citation: Yt. Sun et al., Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy, APPL PHYS L, 79(12), 2001, pp. 1885-1887
Authors:
Kamp, M
Hofmann, J
Forchel, A
Lourdudoss, S
Citation: M. Kamp et al., Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors, APPL PHYS L, 78(26), 2001, pp. 4074-4075
Authors:
Barrios, CA
Messmer, ER
Holmgren, M
Lourdudoss, S
Citation: Ca. Barrios et al., GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth, EL SOLID ST, 3(9), 2000, pp. 439-441
Authors:
Messmer, ER
Lourdudoss, S
Citation: Er. Messmer et S. Lourdudoss, Analysis of regrowth evolution around VCSEL type mesas, J CRYST GR, 219(3), 2000, pp. 185-192
Authors:
Messmer, ER
Lindstrom, T
Lourdudoss, S
Citation: Er. Messmer et al., In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabrication, J CRYST GR, 210(4), 2000, pp. 600-612
Authors:
Barrios, CA
Messmer, ER
Risberg, A
Carlsson, C
Halonen, J
Ghisoni, M
Larsson, A
Lourdudoss, S
Citation: Ca. Barrios et al., GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GalnP : Fe regrowth, ELECTR LETT, 36(18), 2000, pp. 1542-1544
Authors:
Messmer, ER
Soderstrom, D
Hult, P
Marcinkevicius, S
Lourdudoss, S
Look, DC
Citation: Er. Messmer et al., Properties of semi-insulating GaAs : Fe grown by hydride vapor phase epitaxy, J ELCHEM SO, 147(8), 2000, pp. 3109-3110
Authors:
Jahan, D
Soderstrom, D
Lourdudoss, S
Citation: D. Jahan et al., Kinetic study of InP : Fe growth by LP-HVPE with ferrocene as Fe source, J ELCHEM SO, 147(2), 2000, pp. 744-746
Authors:
Lourdudoss, S
Soderstrom, D
Kjebon, O
Citation: S. Lourdudoss et al., Epitaxial semi-insulating III-V layers for optoelectronic device fabrication, OPTOEL PROP, 9, 2000, pp. 131-163
Authors:
Gopalakrishnan, N
Messmer, ER
Lourdudoss, S
Citation: N. Gopalakrishnan et al., Self consistent model for InP selective regrowth by hydride vapour phase epitaxy, JPN J A P 1, 38(2B), 1999, pp. 1037-1039
Authors:
Lourdudoss, S
Gopalakrishnan, N
Holz, R
Deschler, M
Beccard, R
Citation: S. Lourdudoss et al., Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy, MET MAT T A, 30(4), 1999, pp. 1047-1051
Authors:
Soderstrom, D
Lourdudoss, S
Carlstrom, CF
Anand, S
Kahn, M
Kamp, M
Citation: D. Soderstrom et al., Buried heterostructure complex-coupled distributed feedback 1.55 mu m lasers fabricated using dry etching processes and quaternary layer overgrowth, J VAC SCI B, 17(6), 1999, pp. 2622-2625
Authors:
Anand, S
Carlstrom, CF
Messmer, ER
Lourdudoss, S
Landgren, G
Citation: S. Anand et al., Doping landscapes in the nanometer range by scanning capacitance microscopy, APPL SURF S, 145, 1999, pp. 525-529
Authors:
Cesna, A
Soderstrom, D
Marcinkevicius, S
Lourdudoss, S
Citation: A. Cesna et al., Carrier trapping in iron-doped GaInP, J APPL PHYS, 85(2), 1999, pp. 1234-1236
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