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Results: 51-75/80
Authors:
Jakob, M
Stahl, H
Knoch, J
Appenzeller, J
Lengeler, B
Hardtdegen, H
Luth, H
Citation: M. Jakob et al., Direct determination of the Andreev reflection probability by means of point contact spectroscopy, APPL PHYS L, 76(9), 2000, pp. 1152-1154
Authors:
Jakob, M
Stahl, H
Knoch, J
Appenzeller, J
Lengeler, B
Hardtdegen, H
Luth, H
Citation: M. Jakob et al., Direct determination of the Andreev reflection probability by means of point contact spectroscopy (vol 76, pg 1152 2000), APPL PHYS L, 76(19), 2000, pp. 2800-2800
Authors:
Thust, M
Schoning, MJ
Schroth, P
Malkoc, U
Dicker, CI
Steffen, A
Kordos, P
Luth, H
Citation: M. Thust et al., Enzyme immobilisation on planar and porous silicon substrates for biosensor applications, J MOL CAT B, 7(1-4), 1999, pp. 77-83
Authors:
Rizzi, A
Lantier, R
Monti, F
Luth, H
Della Sala, F
Di Carlo, A
Lugli, P
Citation: A. Rizzi et al., AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields, J VAC SCI B, 17(4), 1999, pp. 1674-1681
Authors:
Schroth, P
Schoning, MJ
Kordos, P
Luth, H
Schutz, S
Weissbecker, B
Hummel, HE
Citation: P. Schroth et al., Insect-based BioFETs with improved signal characteristics, BIOSENS BIO, 14(3), 1999, pp. 303-308
Authors:
Schubert, J
Schoning, MJ
Schmidt, C
Siegert, M
Mesters, S
Zander, W
Kordos, P
Luth, H
Legin, A
Mourzina, YG
Seleznev, B
Vlasov, YG
Citation: J. Schubert et al., Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique, APPL PHYS A, 69, 1999, pp. S803-S805
Authors:
Maciel, AC
Kim, J
O'Sullivan, ED
Ryan, JF
Schwarz, A
Kaluza, A
Hardtdegen, H
Schapers, T
Meertens, D
Dieker, C
Luth, H
Citation: Ac. Maciel et al., Optical and transport studies of hot electrons in modulation-doped quantumwires, PHYSICA B, 272(1-4), 1999, pp. 101-106
Authors:
Schapers, T
Neurohr, K
Malindretos, J
Kaluza, A
Picard, JM
Luth, H
Citation: T. Schapers et al., Multiple Andreev reflections in ballistic Nb-InGaAs/InP-Nb junctions, SUPERLATT M, 25(5-6), 1999, pp. 851-859
Authors:
Golubov, AA
Neurohr, K
Schapers, T
Luth, H
Behet, M
Citation: Aa. Golubov et al., Suppression of Josephson currents in ballistic junctions by an injection current, SUPERLATT M, 25(5-6), 1999, pp. 1033-1040
Authors:
Vitusevich, SA
Forster, A
Belyaev, AE
Indlekofer, KM
Luth, H
Konakova, RV
Citation: Sa. Vitusevich et al., Resonant tunnelling effect in delta doped p-n GaAs junction, MICROEL ENG, 46(1-4), 1999, pp. 169-172
Authors:
Neurohr, K
Schapers, T
Malindretos, J
Lachenmann, S
Braginski, AI
Luth, H
Behet, M
Borghs, G
Golubov, AA
Citation: K. Neurohr et al., Local suppression of Josephson currents in niobium/two-dimensional electron gas/niobium structures by an injection current, PHYS REV B, 59(17), 1999, pp. 11197-11200
Authors:
Moers, J
Klaes, D
Tonnesmann, A
Vescan, L
Wickenhauser, S
Grabolla, T
Marso, M
Kordos, P
Luth, H
Citation: J. Moers et al., Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth, SOL ST ELEC, 43(3), 1999, pp. 529-535
Authors:
Lantier, R
Boscherini, F
Rizzi, A
D'Acapito, F
Mobilio, S
Luth, H
Citation: R. Lantier et al., Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001): Heterojunction electronic properties, PHYS ST S-A, 176(1), 1999, pp. 615-619
Authors:
Luth, H
Citation: H. Luth, Interface science, its impact on modern semiconductor technology and device physics, PHYS ST S-A, 173(1), 1999, pp. 5-14
Authors:
Griebel, M
Indlekofer, KM
Forster, A
Luth, H
Citation: M. Griebel et al., Single electron transport in resonant tunnelling diodes laterally confinedby ion implantation, J PHYS D, 32(14), 1999, pp. 1729-1733
Authors:
Gerthsen, D
Neubauer, B
Dieker, C
Lantier, R
Rizzi, A
Luth, H
Citation: D. Gerthsen et al., Molecular beam epitaxy (MBE) growth and structural properties of GaN and AlN on 3C-SiC(0 0 1) substrates, J CRYST GR, 200(3-4), 1999, pp. 353-361
Authors:
Butz, R
Luth, H
Citation: R. Butz et H. Luth, Strain dependent growth of silicon on Ge/Si-C heterostructures, J CRYST GR, 200(3-4), 1999, pp. 407-413
Authors:
Moers, J
Klaes, D
Tonnesmann, A
Vescan, L
Wickenhauser, S
Marso, M
Kordos, P
Luth, H
Citation: J. Moers et al., 19GHz vertical Si p-channel MOSFET, ELECTR LETT, 35(3), 1999, pp. 239-240
Authors:
Gluck, O
Schoning , MJ
Luth, H
Otto, A
Emons, H
Citation: O. Gluck et al., Trace metal determination by de resistance changes of microstructured thingold film electrodes, ELECTR ACT, 44(21-22), 1999, pp. 3761-3768
Authors:
Schroth, P
Schoning, MJ
Schutz, S
Malkoc, U
Steffen, A
Marso, M
Hummel, HE
Kordos, P
Luth, H
Citation: P. Schroth et al., Coupling of insect antennae to field-effect transistors for biochemical sensing, ELECTR ACT, 44(21-22), 1999, pp. 3821-3826
Authors:
Schmitt, G
Schultze, JW
Fassbender, F
Buss, G
Luth, H
Schoning, MJ
Citation: G. Schmitt et al., Passivation and corrosion of microelectrode arrays, ELECTR ACT, 44(21-22), 1999, pp. 3865-3883
Authors:
Buss, G
Schoning, MJ
Luth, H
Schultze, JW
Citation: G. Buss et al., Modifications and characterization of a silicon-based microelectrode array, ELECTR ACT, 44(21-22), 1999, pp. 3899-3910
Authors:
Schapers, T
Muller, RP
Kaluza, A
Hardtdegen, H
Luth, H
Citation: T. Schapers et al., Adjustment of the critical current in a Nb-InxGa1-xAs/InP Josephson contact by light exposure, APPL PHYS L, 75(3), 1999, pp. 391-393
Authors:
Arrand, HF
Benson, TM
Sewell, P
Loni, A
Bozeat, RJ
Arens-Fischer, R
Kruger, M
Thonissen, M
Luth, H
Citation: Hf. Arrand et al., The application of porous silicon to optical waveguiding technology, IEEE S T QU, 4(6), 1998, pp. 975-982
Authors:
Butz, R
Luth, H
Citation: R. Butz et H. Luth, The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation, THIN SOL FI, 336(1-2), 1998, pp. 69-72