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Results: 1-24 |
Results: 24
AMORPHOUS-SILICON SENSORS FOR OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES BURIED IN SILICON-WAFERS
Authors: DECESARE G MAIELLO G MASINI G BONDARENKO V FERRARI A
Citation: G. Decesare et al., AMORPHOUS-SILICON SENSORS FOR OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES BURIED IN SILICON-WAFERS, Journal of non-crystalline solids, 230, 1998, pp. 1354-1358
EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING
Authors: GORBACH TY SVECHNIKOV SV SMERTENKO PS TULCHINSKII PG BONDARENKO AV VOLCHEK SA DOROFEEV AM MASINI G MAIELLO G LAMONICA S FERRARI A
Citation: Ty. Gorbach et al., EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING, Semiconductors, 31(12), 1997, pp. 1221-1224
LASER AND NITROGEN PLASMA BEAM-INDUCED MODIFICATIONS IN AMORPHOUS-SILICON THIN-FILMS
Authors: FERRARI A MAIELLO G LAMONICA S DECESARE G DINESCU G DINESCU M ALDEA E CHITICA N MORJAN I GARTNER M MASINI G
Citation: A. Ferrari et al., LASER AND NITROGEN PLASMA BEAM-INDUCED MODIFICATIONS IN AMORPHOUS-SILICON THIN-FILMS, Applied surface science, 110, 1997, pp. 87-92
CHARACTERIZATION OF SILICON LEDS INTEGRATED WITH OXIDIZED POROUS SILICON SOI
Authors: BALUCANI M BONDARENKO V DOROFEEV A ERMALITSKI F KAZUCHITS N MAIELLO G MASINI L MELNIKOV S LAMONICA S VOLCHEK S FERRARI A
Citation: M. Balucani et al., CHARACTERIZATION OF SILICON LEDS INTEGRATED WITH OXIDIZED POROUS SILICON SOI, Microelectronic engineering, 36(1-4), 1997, pp. 115-118
POROUS SILICON AS LOW-DIMENSIONAL HOST MATERIAL FOR ERBIUM-DOPED STRUCTURES
Authors: BONDARENKO V DOLGYI L DOROFEEV A KAZUCHITS N LESHOK A TROYANOVA G VOROZOV N MAIELLO G MASINI G LAMONICA S FERRARI A
Citation: V. Bondarenko et al., POROUS SILICON AS LOW-DIMENSIONAL HOST MATERIAL FOR ERBIUM-DOPED STRUCTURES, Thin solid films, 297(1-2), 1997, pp. 48-52
VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MAIELLO G LAMONICA S MASINI G PROVERBIO E FERRARI A
Citation: S. Lazarouk et al., VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS, Thin solid films, 297(1-2), 1997, pp. 97-101
PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON
Authors: LAMONICA S MAIELLO G FERRARI A MASINI G LAZAROUK S JAGUIRO P KATSOUBA S
Citation: S. Lamonica et al., PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 265-267
LIGHT GUIDING IN OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES
Authors: MAIELLO G LAMONICA S FERRARI A MASINI G BONDARENKO VP DOROFEEV AM KAZUCHITS NM
Citation: G. Maiello et al., LIGHT GUIDING IN OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES, Thin solid films, 297(1-2), 1997, pp. 311-313
CAPACITY COUPLED RF DISCHARGE PLASMA-JET TREATMENT OF A-SIC-H STRUCTURES
Authors: FERRARI A MAIELLO G LAMONICA S PROVERBIO E DINESCU G DINESCU M CHITICA N ANDREI A SANDU V GARTNER M MASINI G
Citation: A. Ferrari et al., CAPACITY COUPLED RF DISCHARGE PLASMA-JET TREATMENT OF A-SIC-H STRUCTURES, Thin solid films, 296(1-2), 1997, pp. 23-27
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/, Journal of the Electrochemical Society, 144(5), 1997, pp. 1890-1890
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/, Journal of the Electrochemical Society, 144(4), 1997, pp. 1463-1468
CONDUCTIVITY EFFECTS IN HYDROGENATED AMORPHOUS-SILICON INDUCED BY GAMMA-RAY IRRADIATION
Authors: BACCARO S DECESARE G MAIELLO G MASINI G MONTECCHI M PETTI M FERRARI A
Citation: S. Baccaro et al., CONDUCTIVITY EFFECTS IN HYDROGENATED AMORPHOUS-SILICON INDUCED BY GAMMA-RAY IRRADIATION, Sensors and actuators. B, Chemical, 31(1-2), 1996, pp. 107-109
WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS
Authors: MASINI G LAMONICA S MAIELLO G LAZAROUK S BONDARENKO V
Citation: G. Masini et al., WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1205-1212
CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE THIN-FILMS BY LASER TREATMENT
Authors: DECESARE G LAMONICA S MAIELLO G PROVERBIO E FERRARI A DINESCU M CHITICA N MORJAN I ANDREI A
Citation: G. Decesare et al., CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE THIN-FILMS BY LASER TREATMENT, Surface & coatings technology, 80(1-2), 1996, pp. 237-241
CRYSTALLIZATION OF SILICON-CARBIDE THIN-FILMS BY PULSED-LASER IRRADIATION
Authors: DECESARE G LAMONICA S MAIELLO G MASINI G PROVERBIO E FERRARI A CHITICA N DINESCU M ALEXANDRESCU R MORJAN I ROTIU E
Citation: G. Decesare et al., CRYSTALLIZATION OF SILICON-CARBIDE THIN-FILMS BY PULSED-LASER IRRADIATION, Applied surface science, 106, 1996, pp. 193-197
VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS
Authors: LAZAROUK S JAGUIRO P KATSOUBA S LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS, Thin solid films, 276(1-2), 1996, pp. 168-170
ELECTROLUMINESCENCE FROM ALUMINUM-POROUS SILICON REVERSE-BIASED SCHOTTKY DIODES FORMED ON THE BASE OF HIGHLY DOPED N-TYPE POLYSILICON
Authors: LAZAROUK S BONDARENKO V LAMONICA S MAIELLO G MASINI G PERSHUKEVICH P FERRARI A
Citation: S. Lazarouk et al., ELECTROLUMINESCENCE FROM ALUMINUM-POROUS SILICON REVERSE-BIASED SCHOTTKY DIODES FORMED ON THE BASE OF HIGHLY DOPED N-TYPE POLYSILICON, Thin solid films, 276(1-2), 1996, pp. 296-298
ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON
Authors: LAZAROUK S BONDARENKO V JAGUIRO P LACQUANITI N LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON, Journal of non-crystalline solids, 200, 1996, pp. 973-976
STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(15), 1996, pp. 2108-2110
STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(12), 1996, pp. 1646-1648
POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME
Authors: BERTOLOTTI M FAZIO E FERRARI A LAMONICA S LAZAROUK S LIAKHOU G MAIELLO G PROVERBIO E SCHIRONE L CARASSITI F
Citation: M. Bertolotti et al., POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME, Thin solid films, 255(1-2), 1995, pp. 152-154
ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY
Authors: LAZAROUK S BARANOV I MAIELLO G PROVERBIO E DECESARE G FERRARI A
Citation: S. Lazarouk et al., ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY, Journal of the Electrochemical Society, 141(9), 1994, pp. 2556-2559
ONE-STEP IN-DIFFUSION AS A RESULT OF MULTIPULSE LASER IRRADIATION OF LINBO3 SINGLE-CRYSTALLINE SUBSTRATES COVERED WITH THIN TI DEPOSITS - ON THE EFFECT OF THE RADIATION WAVELENGTH
Authors: FERRARI A SCHIRONE L MAIELLO G DECESARE C CARASSITTI F BERTOLOTTI M CAPONERO MA LUCHES A MARTINO M DINESCU M CHITICA N MIHAILESCU IN URSU I
Citation: A. Ferrari et al., ONE-STEP IN-DIFFUSION AS A RESULT OF MULTIPULSE LASER IRRADIATION OF LINBO3 SINGLE-CRYSTALLINE SUBSTRATES COVERED WITH THIN TI DEPOSITS - ON THE EFFECT OF THE RADIATION WAVELENGTH, J. mod. opt., 40(6), 1993, pp. 1043-1052
EVIDENCE OF REFRACTIVE-INDEX CHANGE BY TI INDIFFUSION INTO LINBO3 SUBSTRATE AS A RESULT OF MULTIPULSE FREE-RUNNING RUBY-LASER IRRADIATION
Authors: DINESCU M CHITICA N TIMUS C MIHAILESCU IN ANDREI A MAIELLO G SCHIRONE L FERRARI A BERTOLOTTI M
Citation: M. Dinescu et al., EVIDENCE OF REFRACTIVE-INDEX CHANGE BY TI INDIFFUSION INTO LINBO3 SUBSTRATE AS A RESULT OF MULTIPULSE FREE-RUNNING RUBY-LASER IRRADIATION, Journal of applied physics, 74(1), 1993, pp. 24-30
Risultati: 1-24 |