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Results:
1-16
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Results: 16
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
TALALAEV RA
Citation: Sy. Karpov et al., ANALYSIS OF GALLIUM NITRIDE GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 187(3-4), 1998, pp. 397-401
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
TALALAEV RA
Citation: Sy. Karpov et al., CONTROL OF SIC GROWTH AND GRAPHITIZATION IN SUBLIMATION SANDWICH SYSTEM, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 340-344
Authors:
AVERYANOVA MV
PRZHEVALSKII IN
KARPOV SY
MAKAROV YN
RAMM MS
TALALAEV RA
Citation: Mv. Averyanova et al., ANALYSIS OF VAPORIZATION KINETICS OF GROUP-III NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 167-171
Authors:
VODAKOV YA
ROENKOV AD
RAMM MG
MOKHOV EN
MAKAROV YN
Citation: Ya. Vodakov et al., USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS, Physica status solidi. b, Basic research, 202(1), 1997, pp. 177-200
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
Citation: Sy. Karpov et al., SIMULATION OF SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALS, Physica status solidi. b, Basic research, 202(1), 1997, pp. 201-220
Authors:
RUPP R
MAKAROV YN
BEHNER H
WIEDENHOFER A
Citation: R. Rupp et al., SILICON-CARBIDE EPITAXY IN A VERTICAL CVD REACTOR - EXPERIMENTAL RESULTS AND NUMERICAL PROCESS SIMULATION, Physica status solidi. b, Basic research, 202(1), 1997, pp. 281-304
Authors:
BERGUNDE T
DAUELSBERG M
KADINSKI L
MAKAROV YN
YUFEREV VS
SCHMITZ D
STRAUCH G
JURGENSEN H
Citation: T. Bergunde et al., PROCESS OPTIMIZATION OF MOVPE GROWTH BY NUMERICAL MODELING OF TRANSPORT PHENOMENA INCLUDING THERMAL-RADIATION, Journal of crystal growth, 180(3-4), 1997, pp. 660-669
Authors:
KARPOV SY
MAKAROV YN
MOKHOV EN
RAMM MG
RAMM MS
ROENKOV AD
TALALAEV RA
VODAKOV YA
Citation: Sy. Karpov et al., ANALYSIS OF SILICON-CARBIDE GROWTH BY SUBLIMATION SANDWICH METHOD, Journal of crystal growth, 173(3-4), 1997, pp. 408-416
Authors:
DURST F
KADINSKI L
MAKAROV YN
SCHAFER M
VASILEV MG
YUFEREV VS
Citation: F. Durst et al., ADVANCED MATHEMATICAL-MODELS FOR SIMULATION OF RADIATIVE HEAT-TRANSFER IN CVD REACTORS, Journal of crystal growth, 172(3-4), 1997, pp. 389-395
Authors:
BERGUNDE T
DAUELSBERG M
KADINSKI L
MAKAROV YN
WEYERS M
SCHMITZ D
STRAUCH G
JURGENSEN H
Citation: T. Bergunde et al., HEAT-TRANSFER AND MASS-TRANSPORT IN A MULTIWAFER MOVPE REACTOR - MODELING AND EXPERIMENTAL STUDIES, Journal of crystal growth, 170(1-4), 1997, pp. 66-71
Authors:
DAUELSBERG M
DURST F
KADINSKI L
MAKAROV YN
Citation: M. Dauelsberg et al., PROCESS MODELING IN METAL-ORGANIC VAPOR-P HASE EPITAXY, Chemieingenieurtechnik, 69(7), 1997, pp. 923-930
Authors:
KARPOV SY
MAKAROV YN
RAMM MS
Citation: Sy. Karpov et al., ANALYTICAL MODEL OF SILICON-CARBIDE GROWTH UNDER FREE-MOLECULAR TRANSPORT CONDITIONS, Journal of crystal growth, 169(3), 1996, pp. 491-495
MATHEMATICAL SIMULATION OF TRANSPORT PROCESSES IN MODERN SPUTTER-DEPOSITION TECHNIQUES OF THIN-FILMS
Authors:
FURSENKO AA
GALJUKOV AO
MAKAROV YN
LUTOVINOV DS
RAMM MS
Citation: Aa. Fursenko et al., MATHEMATICAL SIMULATION OF TRANSPORT PROCESSES IN MODERN SPUTTER-DEPOSITION TECHNIQUES OF THIN-FILMS, Journal of crystal growth, 148(1-2), 1995, pp. 155-164
Authors:
KADINSKI L
MAKAROV YN
SCHAFER M
VASILEV MG
YUFEREV VS
Citation: L. Kadinski et al., DEVELOPMENT OF ADVANCED MATHEMATICAL-MODELS FOR NUMERICAL-CALCULATIONS OF RADIATIVE HEAT-TRANSFER IN METALORGANIC CHEMICAL-VAPOR-DEPOSITIONREACTORS, Journal of crystal growth, 146(1-4), 1995, pp. 209-213
Authors:
MAKAROV YN
RAMM MS
SUBASHIEVA EA
ZHMAKIN AI
Citation: Yn. Makarov et al., SIMULATION OF SPECIES TRANSPORT DURING GROWTH OF COMPOUND SEMICONDUCTORS OVER PATTERNED SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 271-276
Authors:
BERGUNDE T
DURST F
KADINSKI L
MAKAROV YN
SCHAFER M
WEYERS M
Citation: T. Bergunde et al., MODELING OF GROWTH IN A 5X3 INCH MULTIWAFER METALORGANIC VAPOR-PHASE EPITAXY REACTOR, Journal of crystal growth, 145(1-4), 1994, pp. 630-635
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