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Results: 1-20 |
Results: 20
POLARIZATION OF INPLANE PHOTOLUMINESCENCE FROM INAS GA(IN)AS QUANTUM-WELL LAYERS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY/
Authors: ALESHKIN VY ZVONKOV BN MALKINA IG SAFYANOV YN CHERNOV AL FILATOV DO
Citation: Vy. Aleshkin et al., POLARIZATION OF INPLANE PHOTOLUMINESCENCE FROM INAS GA(IN)AS QUANTUM-WELL LAYERS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1119-1124
FAR-INFRARED EMISSION AND POSSIBILITY OF POPULATION-INVERSION OF HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI MALKINA IG REVIN DG USKOVA EA ZVONKOV BN
Citation: Vy. Aleshkin et al., FAR-INFRARED EMISSION AND POSSIBILITY OF POPULATION-INVERSION OF HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/, Physica. B, Condensed matter, 251, 1998, pp. 971-975
LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/
Authors: KULBACHINSKII VA KYTIN VG LUNIN RA MALKINA IG ZVONKOV BN SAFYANOV YN
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 107-111
GAASSB GAAS QUANTUM-WELL GROWTH BY MOCVD HYDRIDE EPITAXY WITH LASER SPUTTERING OF ANTIMONY/
Authors: ALESHKIN VY AKHLESTINA SA ZVONKOV BN ZVONKOV NB MALKINA IG USKOVA EA
Citation: Vy. Aleshkin et al., GAASSB GAAS QUANTUM-WELL GROWTH BY MOCVD HYDRIDE EPITAXY WITH LASER SPUTTERING OF ANTIMONY/, JETP letters, 68(1), 1998, pp. 91-96
PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/
Authors: ZVONKOV BN MALKINA IG LINKOVA ER ALESHKIN VY KARPOVICH IA FILATOV DO
Citation: Bn. Zvonkov et al., PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/, Semiconductors, 31(9), 1997, pp. 941-946
SEMICONDUCTOR-LASERS WITH TUNNEL-COUPLED WAVE-GUIDES EMITTING AT THE WAVELENGTH OF 980 NM
Authors: AVRUTSKII IA DIANOV EM ZVONKOV BN ZVONKOV NB MALKINA IG MAKSIMOV GA USKOVA EA
Citation: Ia. Avrutskii et al., SEMICONDUCTOR-LASERS WITH TUNNEL-COUPLED WAVE-GUIDES EMITTING AT THE WAVELENGTH OF 980 NM, Quantum electronics, 27(2), 1997, pp. 118-121
IR RADIATION FROM HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDERREAL-SPACE TRANSFER/
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI REVIN DG MALKINA IG USKOVA EA ZVONKOV BN
Citation: Vy. Aleshkin et al., IR RADIATION FROM HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDERREAL-SPACE TRANSFER/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 178-180
PHOTOLUMINESCENCE FROM INGAAS GAAS MQW HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/
Authors: REVIN DG ALESHKIN VY ANDRONOV AA GAPONOVA DM GAVRILENKO VI MALKINA IG USKOVA EA ZVONKOV BN
Citation: Dg. Revin et al., PHOTOLUMINESCENCE FROM INGAAS GAAS MQW HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 184-186
FAR-INFRARED EMISSION AND ABSORPTION (AMPLIFICATION) UNDER REAL-SPACETRANSFER AND POPULATION-INVERSION IN SHALLOW MULTI-QUANTUM-WELLS
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI MURAVEV AV PAVLOV SG REVIN DG SHASTIN VN MALKINA IG USKOVA EA ZVONKOV BN
Citation: Vy. Aleshkin et al., FAR-INFRARED EMISSION AND ABSORPTION (AMPLIFICATION) UNDER REAL-SPACETRANSFER AND POPULATION-INVERSION IN SHALLOW MULTI-QUANTUM-WELLS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 563-565
SEMICONDUCTOR-LASERS WITH TUNNEL-COUPLED WAVE-GUIDES EMITTING AT THE WAVELENGTH OF 980 NM
Authors: AVRUTSKII IA DIANOV EM ZVONKOV BN ZVONKOV NB MALKINA IG MAKSIMOV GA USKOVA EA
Citation: Ia. Avrutskii et al., SEMICONDUCTOR-LASERS WITH TUNNEL-COUPLED WAVE-GUIDES EMITTING AT THE WAVELENGTH OF 980 NM, Kvantovaa elektronika, 24(2), 1997, pp. 123-126
INAS MONOLAYERS IN INP AND THEIR PHOTOLUMINESCENCE POLARIZATION
Authors: MALKINA IG ALESHKIN VY ZVONKOV BN SAFRANOV YN
Citation: Ig. Malkina et al., INAS MONOLAYERS IN INP AND THEIR PHOTOLUMINESCENCE POLARIZATION, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 61-67
TRANSPORT ANISOTROPY IN SPONTANEOUSLY ORDERED GAINP2 ALLOYS
Authors: CHERNYAK L OSINSKY A TEMKIN H MINTAIROV A MALKINA IG ZVONKOV BN SAFANOV YN
Citation: L. Chernyak et al., TRANSPORT ANISOTROPY IN SPONTANEOUSLY ORDERED GAINP2 ALLOYS, Applied physics letters, 70(18), 1997, pp. 2425-2427
ELECTRON-MOBILITY IN SELECTIVELY DOPED GAAS INXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: KULBACHINSKII VA KYTIN VG BABUSHKINA TS MALKINA IG ZVONKOV BN DEVISSER A
Citation: Va. Kulbachinskii et al., ELECTRON-MOBILITY IN SELECTIVELY DOPED GAAS INXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of low temperature physics, 102(5-6), 1996, pp. 499-508
INFRARED RADIATION FROM HOT HOLES DURING SPATIAL TRANSPORT IN SELECTIVELY DOPED INGAAS GAAS HETEROSTRUCTURES WITH QUANTUM-WELLS/
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI REVIN DG ZVONKOV BN LINKOVA ER MALKINA IG USKOVA EA
Citation: Vy. Aleshkin et al., INFRARED RADIATION FROM HOT HOLES DURING SPATIAL TRANSPORT IN SELECTIVELY DOPED INGAAS GAAS HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 64(7), 1996, pp. 520-524
SUPERLUMINESCENCE POLARIZATION AND OPTICAL-LOSS ANISOTROPY IN AN INGAP GAAS/LNGAP WAVE-GUIDE STRUCTURE/
Authors: ALESHKIN VY REVIN DG AKHLESTINA SA ZVONKOV BN ZVONKOV NB LINKOVA ER MALKINA IG SAFYANOV YN
Citation: Vy. Aleshkin et al., SUPERLUMINESCENCE POLARIZATION AND OPTICAL-LOSS ANISOTROPY IN AN INGAP GAAS/LNGAP WAVE-GUIDE STRUCTURE/, Semiconductors, 29(4), 1995, pp. 307-311
ELECTRON-MOBILITY IN MODULE-ALLOYED STRUC TURES OF INXGA1-XAS GAAS MULTIPLE-QUANTUM HOLES/
Authors: KULBACHINSKII VA KYTIN VG DEVISSER A ZVONKOV BN BABUSHKINA TS MALKINA IG
Citation: Va. Kulbachinskii et al., ELECTRON-MOBILITY IN MODULE-ALLOYED STRUC TURES OF INXGA1-XAS GAAS MULTIPLE-QUANTUM HOLES/, Fizika tverdogo tela, 37(6), 1995, pp. 1771-1771
OPTICAL PHONONS IN SPONTANEOUS ORDERED SO LID-SOLUTIONS OF INGAP
Authors: MINTAIROV AM ZVONKOV BN BABUSHKINA TS MALKINA IG SAFYANOV YN
Citation: Am. Mintairov et al., OPTICAL PHONONS IN SPONTANEOUS ORDERED SO LID-SOLUTIONS OF INGAP, Fizika tverdogo tela, 37(12), 1995, pp. 3607-3620
STRONG POLARIZATION OF THE PHOTOLUMINESCENCE OF INXGA1-XP GROWN ON (110)GAAS
Authors: ALESHKIN VY ZVONKOV BN LINKOVA ER MALKINA IG SAFYANOV YN
Citation: Vy. Aleshkin et al., STRONG POLARIZATION OF THE PHOTOLUMINESCENCE OF INXGA1-XP GROWN ON (110)GAAS, JETP letters, 62(4), 1995, pp. 346-349
LASERS EMITTING AT A WAVELENGTH OF 0.98-M U-M, CONSTRUCTED FROM INGAPGAAS HETEROSTRUCTURES GROWN BY MOCVD HYDRIDE EPITAXY/
Authors: AVRUTCKY IA BATUKOVA LM DIANOV EM ZVONKOV BN ZVONKOV NB MAXIMOV GA MALKINA IG LEBEDEVA LV YANKOVA TN
Citation: Ia. Avrutcky et al., LASERS EMITTING AT A WAVELENGTH OF 0.98-M U-M, CONSTRUCTED FROM INGAPGAAS HETEROSTRUCTURES GROWN BY MOCVD HYDRIDE EPITAXY/, Kvantovaa elektronika, 21(10), 1994, pp. 921-924
PROPERTIES OF DELTA-CARBON-DOPED GAAS-LAYERS OBTAINED BY OMVP-HYDRIDEEPITAXY
Authors: BATUKOVA LM BABUSHKINA TS DROZDOV YN ZVONKOV BN MALKINA IG YANKOVA TN
Citation: Lm. Batukova et al., PROPERTIES OF DELTA-CARBON-DOPED GAAS-LAYERS OBTAINED BY OMVP-HYDRIDEEPITAXY, Inorganic materials, 29(3), 1993, pp. 319-323
Risultati: 1-20 |