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Results: 1-25 | 26-48
Results: 1-25/48
THE ORIGIN OF ELECTROLUMINESCENCE AT POROUS P-SILICON LAYERS-ELECTROLYTE INTERFACES
Authors: MORENO JD GUERREROLEMUS R MARTINEZDUART JM MARCOS ML GONZALEZVELASCO J
Citation: Jd. Moreno et al., THE ORIGIN OF ELECTROLUMINESCENCE AT POROUS P-SILICON LAYERS-ELECTROLYTE INTERFACES, Advanced materials, 10(1), 1998, pp. 38
SILVER-BASED LOW-EMISSIVITY COATINGS FOR ARCHITECTURAL WINDOWS - OPTICAL AND STRUCTURAL-PROPERTIES
Authors: MARTINPALMA RJ VAZQUEZ L MARTINEZDUART JM",MALATSRIERA
Citation: Rj. Martinpalma et al., SILVER-BASED LOW-EMISSIVITY COATINGS FOR ARCHITECTURAL WINDOWS - OPTICAL AND STRUCTURAL-PROPERTIES, Solar energy materials and solar cells, 53(1-2), 1998, pp. 55-66
INFLUENCE OF NITROGEN IMPLANTATION ON THE PROPERTIES OF TI AND SUBSTOICHIOMETRIC TINX FILMS DEPOSITED ON HIGH-SPEED STEEL
Authors: RODRIGO MT JIMENEZ C VAZQUEZ L ALONSO F FERNANDEZ M MARTINEZDUART JM
Citation: Mt. Rodrigo et al., INFLUENCE OF NITROGEN IMPLANTATION ON THE PROPERTIES OF TI AND SUBSTOICHIOMETRIC TINX FILMS DEPOSITED ON HIGH-SPEED STEEL, Journal of materials research, 13(8), 1998, pp. 2117-2122
ACCURATE DETERMINATION OF THE OPTICAL-CONSTANTS OF SPUTTER-DEPOSITED AG AND SNO2 FOR LOW EMISSIVITY COATINGS
Authors: MARTINPALMA RJ MARTINEZDUART JM
Citation: Rj. Martinpalma et Jm. Martinezduart, ACCURATE DETERMINATION OF THE OPTICAL-CONSTANTS OF SPUTTER-DEPOSITED AG AND SNO2 FOR LOW EMISSIVITY COATINGS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 409-412
PAPERS PRESENTED AT THE 1997 ICAM E-MRS CONFERENCE, SYMPOSIUM K - COATINGS AND SURFACE MODIFICATIONS FOR SURFACE PROTECTION AND TRIBOLOGICAL APPLICATIONS, STRASBOURG, FRANCE, JUNE 16-20, 1997 - PREFACE/
Authors: RIVIERE JP PRANEVICIUS L MARTINEZDUART JM GRILL A
Citation: Jp. Riviere et al., PAPERS PRESENTED AT THE 1997 ICAM E-MRS CONFERENCE, SYMPOSIUM K - COATINGS AND SURFACE MODIFICATIONS FOR SURFACE PROTECTION AND TRIBOLOGICAL APPLICATIONS, STRASBOURG, FRANCE, JUNE 16-20, 1997 - PREFACE/, Surface & coatings technology, 101(1-3), 1998, pp. 11-11
RELATIONSHIP BETWEEN THE MICROSTRUCTURE AND THE WATER PERMEABILITY OFTRANSPARENT GAS BARRIER COATINGS
Authors: GARCIAAYUSO G SALVAREZZA R MARTINEZDUART JM SANCHEZ O VAZQUEZ L
Citation: G. Garciaayuso et al., RELATIONSHIP BETWEEN THE MICROSTRUCTURE AND THE WATER PERMEABILITY OFTRANSPARENT GAS BARRIER COATINGS, Surface & coatings technology, 101(1-3), 1998, pp. 459-462
QUANTUM-SIZE EFFECT FROM N-TYPE POROUS SILICON
Authors: MOUFFAK Z AOURAG H MORENO JD MARTINEZDUART JM
Citation: Z. Mouffak et al., QUANTUM-SIZE EFFECT FROM N-TYPE POROUS SILICON, Microelectronic engineering, 43-4, 1998, pp. 655-659
PROCEEDINGS OF THE 10TH INTERNATIONAL-CONFERENCE ON THIN-FILMS - SALAMANCA, SPAIN, SEPTEMBER 1996 - FOREWORD
Authors: COLLIGON JS DESEGOVIA JL MARTINEZDUART JM
Citation: Js. Colligon et al., PROCEEDINGS OF THE 10TH INTERNATIONAL-CONFERENCE ON THIN-FILMS - SALAMANCA, SPAIN, SEPTEMBER 1996 - FOREWORD, Thin solid films, 317(1-2), 1998, pp. 11-11
CHARACTERIZATION OF SIOXNY FILMS DEPOSITED FROM SICL4 BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: SANCHEZ O AGUILAR MA FALCONY C MARTINEZDUART JM VELEZ MH
Citation: O. Sanchez et al., CHARACTERIZATION OF SIOXNY FILMS DEPOSITED FROM SICL4 BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 317(1-2), 1998, pp. 149-152
DEPOSITION OF SILICON OXINITRIDE FILMS FROM HEXAMETHYLDISILIZANE (HMDS) BY PECVD
Authors: GONZALEZLUNA R RODRIGO MT JIMENEZ C MARTINEZDUART JM
Citation: R. Gonzalezluna et al., DEPOSITION OF SILICON OXINITRIDE FILMS FROM HEXAMETHYLDISILIZANE (HMDS) BY PECVD, Thin solid films, 317(1-2), 1998, pp. 347-350
DIELECTRIC-RELAXATION OF AMORPHOUS AND TEXTURED MIS-CAPACITOR THIN-FILMS
Authors: FERNANDEZGUTIERREZ F GARRIDO OS HERNANDEZVELEZ M BUENO RM MARTINEZDUART JM
Citation: F. Fernandezgutierrez et al., DIELECTRIC-RELAXATION OF AMORPHOUS AND TEXTURED MIS-CAPACITOR THIN-FILMS, Solid-state electronics, 42(6), 1998, pp. 925-930
INFLUENCE OF WAVELENGTH ON THE RAMAN LINE-SHAPE IN POROUS SILICON
Authors: AGULLORUEDA F MORENO JD MONTOYA E GUERREROLEMUS R MARTINEZDUART JM
Citation: F. Agullorueda et al., INFLUENCE OF WAVELENGTH ON THE RAMAN LINE-SHAPE IN POROUS SILICON, Journal of applied physics, 84(4), 1998, pp. 2349-2351
ON THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF POROUS SILICON LAYERS SUBMITTED TO ELECTROOXIDATION
Authors: MORENO JD GUERREROLEMUS R MARTINEZDUART JM MARCOS ML GONZALEZVELASCO J
Citation: Jd. Moreno et al., ON THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF POROUS SILICON LAYERS SUBMITTED TO ELECTROOXIDATION, Journal of electroanalytical chemistry [1992], 437(1-2), 1997, pp. 135-139
EFFECT OF SURFACE FRACTALITY ON THE PERMEABILITY OF TRANSPARENT GAS BARRIER COATINGS
Authors: GARCIAAYUSO G SALVAREZZA R MARTINEZDUART JM SANCHEZ O VAZQUEZ L
Citation: G. Garciaayuso et al., EFFECT OF SURFACE FRACTALITY ON THE PERMEABILITY OF TRANSPARENT GAS BARRIER COATINGS, Advanced materials, 9(8), 1997, pp. 654-658
EFFECT OF PHOTOETCHING ON POROUS SILICON MORPHOLOGY
Authors: GUERREROLEMUS R MORENO JD MARTINPALMA RJ MARTINEZDUART JM HERRERO P MARCOS ML GONZALEZVELASCO J GOMEZ P
Citation: R. Guerrerolemus et al., EFFECT OF PHOTOETCHING ON POROUS SILICON MORPHOLOGY, Surface and interface analysis, 25(9), 1997, pp. 677-682
CHARACTERIZATION OF THE INTERFACES FORMED DURING THE SILICIDATION PROCESS OF TI FILMS ON SI AT LOW AND HIGH-TEMPERATURES
Authors: PEREZRIGUEIRO J HERRERO P JIMENEZ C PEREZCASERO R MARTINEZDUART JM
Citation: J. Perezrigueiro et al., CHARACTERIZATION OF THE INTERFACES FORMED DURING THE SILICIDATION PROCESS OF TI FILMS ON SI AT LOW AND HIGH-TEMPERATURES, Surface and interface analysis, 25(11), 1997, pp. 896-903
INFLUENCE OF THE INITIAL NITROGEN-CONTENT IN TITANIUM FILMS ON THE NITRIDATION AND SILICIDATION PROCESSES
Authors: JIMENEZ C PEREZRIGUEIRO J VAZQUEZ L FERNANDEZ M PEREZCASERO R MARTINEZDUART JM
Citation: C. Jimenez et al., INFLUENCE OF THE INITIAL NITROGEN-CONTENT IN TITANIUM FILMS ON THE NITRIDATION AND SILICIDATION PROCESSES, Thin solid films, 305(1-2), 1997, pp. 185-190
TIME EVOLUTION OF SURFACE POROUS SILICON COMPOSITION UNDER DIFFERENT POSTETCH TREATMENTS
Authors: GUERREROLEMUS R MARTINEZDUART JM
Citation: R. Guerrerolemus et Jm. Martinezduart, TIME EVOLUTION OF SURFACE POROUS SILICON COMPOSITION UNDER DIFFERENT POSTETCH TREATMENTS, Thin solid films, 297(1-2), 1997, pp. 118-121
OPTICAL AND STRUCTURAL CHARACTERIZATION OF RF-SPUTTERED CEO2 THIN-FILMS
Authors: BUENO RM MARTINEZDUART JM HERNANDEZVELEZ M VAZQUEZ L
Citation: Rm. Bueno et al., OPTICAL AND STRUCTURAL CHARACTERIZATION OF RF-SPUTTERED CEO2 THIN-FILMS, Journal of Materials Science, 32(7), 1997, pp. 1861-1865
PHOTOTHERMAL RADIOMETRIC AND SPECTROSCOPIC MEASUREMENTS ON SILICON-NITRIDE THIN-FILMS
Authors: NESTOROS M GUTIERREZLLORENTE A OTHONOS A CHRISTOFIDES C MARTINEZDUART JM
Citation: M. Nestoros et al., PHOTOTHERMAL RADIOMETRIC AND SPECTROSCOPIC MEASUREMENTS ON SILICON-NITRIDE THIN-FILMS, Journal of applied physics, 82(12), 1997, pp. 6215-6219
SILICIDATION PROCESS OF TI TINX SI STRUCTURES
Authors: PEREZRIGUEIRO J JIMENEZ C PEREZCASERO R MARTINEZDUART JM
Citation: J. Perezrigueiro et al., SILICIDATION PROCESS OF TI TINX SI STRUCTURES, Journal of applied physics, 81(2), 1997, pp. 781-785
DEPTH-RESOLVED MICRO-RAMAN STUDY OF POROUS SILICON AT DIFFERENT OXIDATION-STATES
Authors: MORENO JD AGULLORUEDA F MONTOYA E MARCOS ML GONZALEZVELASCO J GUERREROLEMUS R MARTINEZDUART JM
Citation: Jd. Moreno et al., DEPTH-RESOLVED MICRO-RAMAN STUDY OF POROUS SILICON AT DIFFERENT OXIDATION-STATES, Applied physics letters, 71(15), 1997, pp. 2166-2168
NONLINEAR-ANALYSIS OF THE I-V CHARACTERISTICS IN TI SI AND TISI2/SI SCHOTTKY DIODES/
Authors: PEREZRIGUEIRO J JIMENEZ C PEREZCASERO R MARTINEZDUART JM
Citation: J. Perezrigueiro et al., NONLINEAR-ANALYSIS OF THE I-V CHARACTERISTICS IN TI SI AND TISI2/SI SCHOTTKY DIODES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2623-2626
SIOXNY FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SICL4
Authors: SANCHEZ O AGUILAR MA FALCONY C MARTINEZDUART JM ALBELLA JM
Citation: O. Sanchez et al., SIOXNY FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING SICL4, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2088-2093
NITRIDATION OF TISI2 THIN-FILMS BY RAPID THERMAL-PROCESSING
Authors: PEREZRIGUEIRO J JIMENEZ C VAZQUEZ L PEREZCASERO R MARTINEZDUART JM
Citation: J. Perezrigueiro et al., NITRIDATION OF TISI2 THIN-FILMS BY RAPID THERMAL-PROCESSING, Surface & coatings technology, 80(1-2), 1996, pp. 72-75
Risultati: 1-25 | 26-48