AAAAAA
Results: 1-25/27
Authors:
GUO SP
OHNO H
SHEN AD
OHNO Y
MATSUKURA F
Citation: Sp. Guo et al., PHOTOLUMINESCENCE STUDY OF INAS QUANTUM DOTS AND QUANTUM DASHES GROWNON GAAS (211)B, JPN J A P 1, 37(3B), 1998, pp. 1527-1531
Authors:
OIWA A
KATSUMOTO S
ENDO A
HIRASAWA M
IYE Y
MATSUKURA F
SHEN A
SUGAWARA Y
OHNO H
Citation: A. Oiwa et al., LOW-TEMPERATURE CONDUCTION AND GIANT NEGATIVE MAGNETORESISTANCE IN III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR - (GA,MN)AS GAAS/, Physica. B, Condensed matter, 251, 1998, pp. 775-779
Authors:
SHEN A
OHNO H
MATSUKURA F
LIU HC
AKIBA N
SUGAWARA Y
KUROIWA T
OHNO Y
Citation: A. Shen et al., SUPERLATTICE AND MULTILAYER STRUCTURES BASED ON FERROMAGNETIC SEMICONDUCTOR (GA,MN)AS, Physica. B, Condensed matter, 251, 1998, pp. 809-813
Authors:
SAWADA A
EZAWA ZF
OHNO H
HORIKOSHI Y
KISHIMOTO S
MATSUKURA F
OHNO Y
YASUMOTO M
URAYAMA A
Citation: A. Sawada et al., INTERLAYER QUANTUM COHERENCE AND ANOMALOUS STABILITY OF V=1 BILAYER QUANTUM HALL STATE, Physica. B, Condensed matter, 251, 1998, pp. 836-840
Authors:
KATSUMOTO S
OIWA A
IYE Y
OHNO H
MATSUKURA F
SHEN A
SUGAWARA Y
Citation: S. Katsumoto et al., STRONGLY ANISOTROPIC HOPPING CONDUCTION IN (GA, MN)AS GAAS/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 115-118
Authors:
OIWA A
KATSUMOTO S
ENDO A
HIRASAWA M
IYE Y
OHNO H
MATSUKURA F
SHEN A
SUGAWARA Y
Citation: A. Oiwa et al., GIANT NEGATIVE MAGNETORESISTANCE OF (GA,MN)AS GAAS IN THE VICINITY OFA METAL-INSULATOR-TRANSITION/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 167-171
Authors:
SHEN A
OHNO H
HORIKOSHI Y
GUO SP
OHNO Y
MATSUKURA F
Citation: A. Shen et al., LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY UNDER HIGH AS OVERPRESSURE - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY, Applied surface science, 132, 1998, pp. 382-386
Authors:
GUO SP
OHNO H
SHEN A
MATSUKURA F
OHNO Y
Citation: Sp. Guo et al., SELF-ORGANIZED (IN, MN) AS DILUTED MAGNETIC SEMICONDUCTOR NANOSTRUCTURES ON GAAS SUBSTRATES, Applied surface science, 132, 1998, pp. 797-802
Authors:
MATSUKURA F
OHNO H
SHEN A
SUGAWARA Y
Citation: F. Matsukura et al., TRANSPORT-PROPERTIES AND ORIGIN OF FERROMAGNETISM IN (GA,MN)AS, Physical review. B, Condensed matter, 57(4), 1998, pp. 2037-2040
Authors:
OHNO Y
SAWADA A
EZAWA ZF
OHNO H
HORIKOSHI Y
KISHIMOTO S
MATSUKURA F
YASUMOTO M
URAYAMA A
Citation: Y. Ohno et al., V = 1 BILAYER QUANTUM HALL STATE AT ARBITRARY ELECTRON-DISTRIBUTION IN A DOUBLE-QUANTUM-WELL, Solid-state electronics, 42(7-8), 1998, pp. 1183-1185
Authors:
KISHIMOTO S
OHNO Y
MATSUKURA F
SAKAKI H
OHNO H
Citation: S. Kishimoto et al., ETCHED-BACKGATE FIELD-EFFECT TRANSISTOR STRUCTURE FOR MAGNETOTUNNELING STUDY OF LOW-DIMENSIONAL ELECTRON-SYSTEMS, Solid-state electronics, 42(7-8), 1998, pp. 1187-1190
Authors:
SAWADA A
EZAWA ZF
OHNO H
HORIKOSHI Y
OHNO Y
KISHIMOTO S
MATSUKURA F
YASUMOTO M
URAYAMA A
Citation: A. Sawada et al., PHASE-TRANSITION IN THE NU=2 BILAYER QUANTUM HALL STATE, Physical review letters, 80(20), 1998, pp. 4534-4537
Authors:
KUROIWA T
YASUDA T
MATSUKURA F
SHEN A
OHNO Y
SEGAWA Y
OHNO H
Citation: T. Kuroiwa et al., FARADAY-ROTATION OF FERROMAGNETIC (GA, MN)AS, Electronics Letters, 34(2), 1998, pp. 190-192
Authors:
OHNO H
AKIBA N
MATSUKURA F
SHEN A
OHTANI K
OHNO Y
Citation: H. Ohno et al., SPONTANEOUS SPLITTING OF FERROMAGNETIC (GA, MN)AS VALENCE-BAND OBSERVED BY RESONANT-TUNNELING SPECTROSCOPY, Applied physics letters, 73(3), 1998, pp. 363-365
Authors:
AKIBA N
MATSUKURA F
SHEN A
OHNO Y
OHNO H
OIWA A
KATSUMOTO S
IYE Y
Citation: N. Akiba et al., INTERLAYER EXCHANGE IN (GA,MN)AS (AL,GA)AS/(GA,MN)AS SEMICONDUCTING FERROMAGNET/NONMAGNET/FERROMAGNET TRILAYER STRUCTURES/, Applied physics letters, 73(15), 1998, pp. 2122-2124
Authors:
SHEN AD
OHNO H
MATSUKURA F
SUGAWARA Y
OHNO Y
AKIBA N
KUROIWA T
Citation: Ad. Shen et al., (GA,MN)AS GAAS DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICE STRUCTURESPREPARED BY MOLECULAR-BEAM EPITAXY/, JPN J A P 2, 36(2A), 1997, pp. 73-75
Authors:
MATHUR A
OHNO Y
MATSUKURA F
OHTANI K
AKIBA N
KUROIWA T
NAKAJIMA H
OHNO H
Citation: A. Mathur et al., ELECTRIC-FIELD DEPENDENCE OF INTERSUBBAND TRANSITIONS IN GAAS ALGAAS SINGLE QUANTUM-WELLS/, Applied surface science, 114, 1997, pp. 90-96
Authors:
MATSUKURA F
OIWA A
SHEN A
SUGAWARA Y
AKIBA N
KUROIWA T
OHNO H
ENDO A
KATSUMOTO S
IYE Y
Citation: F. Matsukura et al., GROWTH AND PROPERTIES OF (GA, MN) AS - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR, Applied surface science, 114, 1997, pp. 178-182
Authors:
SHEN A
MATSUKURA F
SUGAWARA Y
KUROIWA T
OHNO H
OIWA A
ENDO A
KATSUMOTO S
IYE Y
Citation: A. Shen et al., EPITAXY AND PROPERTIES OF INMNAS ALGASB DILUTED MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES/, Applied surface science, 114, 1997, pp. 183-188
Authors:
SAWADA A
EZAWA ZF
OHNO H
HORIKOSHI Y
SUGIE O
KISHIMOTO S
MATSUKURA F
OHNO Y
YASUMOTO M
Citation: A. Sawada et al., ANOMALOUS STABILITY OF NU=1 BILAYER QUANTUM HALL STATE, Solid state communications, 103(8), 1997, pp. 447-451
Authors:
OIWA A
KATSUMOTO S
ENDO A
HIRASAWA M
IYE Y
OHNO H
MATSUKURA F
SHEN A
SUGAWARA Y
Citation: A. Oiwa et al., NONMETAL-METAL-NONMETAL TRANSITION AND LARGE NEGATIVE MAGNETORESISTANCE IN (GA, MN)AS GAAS/, Solid state communications, 103(4), 1997, pp. 209-213
Authors:
SHEN A
OHNO H
MATSUKURA F
SUGAWARA Y
AKIBA N
KUROIWA T
OIWA A
ENDO A
KATSUMOTO S
IYE Y
Citation: A. Shen et al., EPITAXY OF (GA, MN)AS, A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS, Journal of crystal growth, 175, 1997, pp. 1069-1074
Authors:
GUO SP
OHNO H
SHEN A
MATSUKURA F
OHNO Y
Citation: Sp. Guo et al., INAS SELF-ORGANIZED QUANTUM DASHES GROWN ON GAAS (211)B, Applied physics letters, 70(20), 1997, pp. 2738-2740
Authors:
TAZUKE Y
MATSUKURA F
Citation: Y. Tazuke et F. Matsukura, DISTRIBUTION OF SPIN RELAXATION-TIMES IN AN ISING SPIN-GLASS FE0.05TIS2, Journal of the Physical Society of Japan, 65(9), 1996, pp. 2994-2997
Authors:
NAGASAKI Y
MATSUKURA F
KATO M
AOKI H
TOKUDA T
Citation: Y. Nagasaki et al., NEW THERMOSENSITIVE RUBBERY POLYMERS - SYNTHESIS OF POLY(SILOXYETHYLENE GLYCOL) AND ITS AQUEOUS-SOLUTION PROPERTIES, Macromolecules, 29(18), 1996, pp. 5859-5863