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Results: 1-19 |
Results: 19
MODELED TUNNEL CURRENTS FOR HIGH DIELECTRIC-CONSTANT DIELECTRICS
Authors: VOGEL EM AHMED KZ HORNUNG B HENSON WK MCLARTY PK LUCOVSKY G HAUSER JR WORTMAN JJ
Citation: Em. Vogel et al., MODELED TUNNEL CURRENTS FOR HIGH DIELECTRIC-CONSTANT DIELECTRICS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1350-1355
ELECTRICAL AND RELIABILITY PROPERTIES OF THIN SILICON OXINITRIDE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: MORFOULI P GHIBAUDO G VOGEL EM HILL WL MISRA V MCLARTY PK WORTMAN JJ
Citation: P. Morfouli et al., ELECTRICAL AND RELIABILITY PROPERTIES OF THIN SILICON OXINITRIDE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Solid-state electronics, 41(7), 1997, pp. 1051-1055
SINGLE-WAFER CLUSTER TOOL PERFORMANCE - AN ANALYSIS OF THE EFFECTS OFREDUNDANT CHAMBERS AND REVISITATION SEQUENCES ON THROUGHPUT
Authors: PERKINSON TL GYURCSIK RS MCLARTY PK
Citation: Tl. Perkinson et al., SINGLE-WAFER CLUSTER TOOL PERFORMANCE - AN ANALYSIS OF THE EFFECTS OFREDUNDANT CHAMBERS AND REVISITATION SEQUENCES ON THROUGHPUT, IEEE transactions on semiconductor manufacturing, 9(3), 1996, pp. 384-400
ON THE PRESENCE OF ALUMINUM IN THERMALLY GROWN OXIDES ON 6H-SILICON CARBIDE
Authors: SRIDEVAN S MCLARTY PK BALIGA BJ
Citation: S. Sridevan et al., ON THE PRESENCE OF ALUMINUM IN THERMALLY GROWN OXIDES ON 6H-SILICON CARBIDE, IEEE electron device letters, 17(3), 1996, pp. 136-138
MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: VOGEL EM HILL WL MISRA V MCLARTY PK WORTMAN JJ HAUSER JR MORFOULI P GHIBAUDO G OUISSE T
Citation: Em. Vogel et al., MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 753-758
ELECTRICAL-PROPERTIES OF COMPOSITE GATE OXIDES FORMED BY RAPID THERMAL-PROCESSING
Authors: MISRA V HENSON WK VOGEL EM HAMES GA MCLARTY PK HAUSER JR WORTMAN JJ
Citation: V. Misra et al., ELECTRICAL-PROPERTIES OF COMPOSITE GATE OXIDES FORMED BY RAPID THERMAL-PROCESSING, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 636-646
LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF OXYNITRIDE GATE DIELECTRICS FOR N-CHANNEL AND P-CHANNEL MOSFETS
Authors: HILL WL VOGEL EM MISRA V MCLARTY PK WORTMAN JJ
Citation: Wl. Hill et al., LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF OXYNITRIDE GATE DIELECTRICS FOR N-CHANNEL AND P-CHANNEL MOSFETS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 15-22
RAPID THERMAL CHEMICAL-VAPOR-DEPOSITED OXIDES ON N-TYPE 6H-SILICON CARBIDE
Authors: SRIDEVAN S MISRA V MCLARTY PK BALIGA BJ WORTMAN JJ
Citation: S. Sridevan et al., RAPID THERMAL CHEMICAL-VAPOR-DEPOSITED OXIDES ON N-TYPE 6H-SILICON CARBIDE, IEEE electron device letters, 16(11), 1995, pp. 524-526
REACTIVE ION ETCHING INDUCED DAMAGE WITH GAS-MIXTURES CHF3 O2 AND SF6O2
Authors: WU W MCLARTY PK
Citation: W. Wu et Pk. Mclarty, REACTIVE ION ETCHING INDUCED DAMAGE WITH GAS-MIXTURES CHF3 O2 AND SF6O2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(1), 1995, pp. 67-72
N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED USING LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: HILL WL VOGEL E MCLARTY PK MISRA V WORTMAN JJ WATT V
Citation: Wl. Hill et al., N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED USING LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Microelectronic engineering, 28(1-4), 1995, pp. 269-272
A SIMPLE PARAMETER EXTRACTION METHOD FOR ULTRA-THIN OXIDE MOSFETS
Authors: MCLARTY PK CRISTOLOVEANU S FAYNOT O MISRA V HAUSER JR WORTMAN JJ
Citation: Pk. Mclarty et al., A SIMPLE PARAMETER EXTRACTION METHOD FOR ULTRA-THIN OXIDE MOSFETS, Solid-state electronics, 38(6), 1995, pp. 1175-1177
ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: MCLARTY PK MISRA V HILL W WORTMAN JJ HAUSER JR MORFOULI P OUISSE T
Citation: Pk. Mclarty et al., ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(1), 1995, pp. 73-75
SINGLE-WAFER CLUSTER TOOL PERFORMANCE - AN ANALYSIS OF THROUGHPUT
Authors: PERKINSON TL MCLARTY PK GYURCSIK RS CAVIN RK
Citation: Tl. Perkinson et al., SINGLE-WAFER CLUSTER TOOL PERFORMANCE - AN ANALYSIS OF THROUGHPUT, IEEE transactions on semiconductor manufacturing, 7(3), 1994, pp. 369-373
A SIMPLE EDGE TERMINATION FOR SILICON-CARBIDE DEVICES WITH NEARLY IDEAL BREAKDOWN VOLTAGE
Authors: ALOK D BALIGA BJ MCLARTY PK
Citation: D. Alok et al., A SIMPLE EDGE TERMINATION FOR SILICON-CARBIDE DEVICES WITH NEARLY IDEAL BREAKDOWN VOLTAGE, IEEE electron device letters, 15(10), 1994, pp. 394-395
THERMAL-OXIDATION OF GH-SILICON CARBIDE AT ENHANCED GROWTH-RATES
Authors: ALOK D BALIGA BJ MCLARTY PK
Citation: D. Alok et al., THERMAL-OXIDATION OF GH-SILICON CARBIDE AT ENHANCED GROWTH-RATES, IEEE electron device letters, 15(10), 1994, pp. 424-426
ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE
Authors: ALOK D MCLARTY PK BALIGA BJ
Citation: D. Alok et al., ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE, Applied physics letters, 65(17), 1994, pp. 2177-2178
ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN ON N-TYPE 6H-SILICON CARBIDE
Authors: ALOK D MCLARTY PK BALIGA BJ
Citation: D. Alok et al., ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN ON N-TYPE 6H-SILICON CARBIDE, Applied physics letters, 64(21), 1994, pp. 2845-2846
CHARACTERIZATION OF THIN SILICON OXYNITRIDE FILMS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: XU XL MCLARTY PK BRUSH H MISRA V WORTMAN JJ HARRIS GS
Citation: Xl. Xu et al., CHARACTERIZATION OF THIN SILICON OXYNITRIDE FILMS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 140(10), 1993, pp. 2970-2974
THIN OXYNITRIDE FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: MCLARTY PK HILL WL XU XL MISRA V WORTMAN JJ HARRIS GS
Citation: Pk. Mclarty et al., THIN OXYNITRIDE FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 63(26), 1993, pp. 3619-3621
Risultati: 1-19 |