AAAAAA

   
Results: 1-15 |
Results: 15
RADIATION-INDUCED CHARGE IN SIMOX BURIED OXIDES - LACK OF THICKNESS DEPENDENCE AT LOW APPLIED FIELDS
Authors: LAWRENCE RK MRSTIK BJ HUGHES HL MCMARR PJ
Citation: Rk. Lawrence et al., RADIATION-INDUCED CHARGE IN SIMOX BURIED OXIDES - LACK OF THICKNESS DEPENDENCE AT LOW APPLIED FIELDS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2095-2100
THE RADIATION RESPONSE OF CAPACITORS FABRICATED ON BONDED SILICON-ON-INSULATOR SUBSTRATES
Authors: MCMARR PJ MRSTIK BJ LAWRENCE RK JERNIGAN GG
Citation: Pj. Mcmarr et al., THE RADIATION RESPONSE OF CAPACITORS FABRICATED ON BONDED SILICON-ON-INSULATOR SUBSTRATES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2115-2123
AFM-BASED FABRICATION OF FREESTANDING SI NANOSTRUCTURES
Authors: SNOW ES CAMPBELL PM MCMARR PJ
Citation: Es. Snow et al., AFM-BASED FABRICATION OF FREESTANDING SI NANOSTRUCTURES, Nanotechnology, 7(4), 1996, pp. 434-437
AFM-BASED FABRICATION OF SI NANOSTRUCTURES
Authors: CAMPBELL PM SNOW ES MCMARR PJ
Citation: Pm. Campbell et al., AFM-BASED FABRICATION OF SI NANOSTRUCTURES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 315-317
NANOFABRICATION WITH PROXIMAL PROBES
Authors: CAMPBELL PM SNOW ES MCMARR PJ
Citation: Pm. Campbell et al., NANOFABRICATION WITH PROXIMAL PROBES, Surface science, 362(1-3), 1996, pp. 870-873
DEPENDENCE OF RADIATION-INDUCED BURIED OXIDE CHARGE ON SILICON-ON-INSULATOR FABRICATION TECHNOLOGY
Authors: LAWRENCE RK MRSTIK BJ HUGHES HL MCMARR PJ
Citation: Rk. Lawrence et al., DEPENDENCE OF RADIATION-INDUCED BURIED OXIDE CHARGE ON SILICON-ON-INSULATOR FABRICATION TECHNOLOGY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2639-2645
TOTAL-DOSE HARDENING OF SIMOX BURIED OXIDES FOR FULLY DEPLETED DEVICES IN RAD-TOLERANT APPLICATIONS
Authors: BRADY FT HUGHES HL MCMARR PJ MRSTIK B
Citation: Ft. Brady et al., TOTAL-DOSE HARDENING OF SIMOX BURIED OXIDES FOR FULLY DEPLETED DEVICES IN RAD-TOLERANT APPLICATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2646-2650
CHARGE TRAPPING VERSUS BURIED OXIDE THICKNESS FOR SIMOX STRUCTURES
Authors: LAWRENCE RK IOANNOU DE HUGHES HL MCMARR PJ MRSTIK BJ
Citation: Rk. Lawrence et al., CHARGE TRAPPING VERSUS BURIED OXIDE THICKNESS FOR SIMOX STRUCTURES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2114-2121
IMPROVEMENT IN ELECTRICAL-PROPERTIES OF BURIED SIO2 LAYERS BY HIGH-TEMPERATURE OXIDATION
Authors: MRSTIK BJ MCMARR PJ HUGHES HL ANC MJ KRULL WA
Citation: Bj. Mrstik et al., IMPROVEMENT IN ELECTRICAL-PROPERTIES OF BURIED SIO2 LAYERS BY HIGH-TEMPERATURE OXIDATION, Applied physics letters, 67(22), 1995, pp. 3283-3285
FABRICATION OF NANOMETER-SCALE SIDE-GATED SILICON FIELD-EFFECT TRANSISTORS WITH AN ATOMIC-FORCE MICROSCOPE
Authors: CAMPBELL PM SNOW ES MCMARR PJ
Citation: Pm. Campbell et al., FABRICATION OF NANOMETER-SCALE SIDE-GATED SILICON FIELD-EFFECT TRANSISTORS WITH AN ATOMIC-FORCE MICROSCOPE, Applied physics letters, 66(11), 1995, pp. 1388-1390
FABRICATION OF NANOMETER-SCALE CONDUCTING SILICON WIRES WITH A SCANNING TUNNELING MICROSCOPE
Authors: CAMPBELL PM SNOW ES MCMARR PJ
Citation: Pm. Campbell et al., FABRICATION OF NANOMETER-SCALE CONDUCTING SILICON WIRES WITH A SCANNING TUNNELING MICROSCOPE, Solid-state electronics, 37(4-6), 1994, pp. 583-586
THE USE OF SPECTROSCOPIC ELLIPSOMETRY TO PREDICT THE RADIATION RESPONSE OF SIMOX
Authors: MRSTIK BJ MCMARR PJ LAWRENCE RK HUGHES HL
Citation: Bj. Mrstik et al., THE USE OF SPECTROSCOPIC ELLIPSOMETRY TO PREDICT THE RADIATION RESPONSE OF SIMOX, IEEE transactions on nuclear science, 41(6), 1994, pp. 2277-2283
RELATIONSHIP BETWEEN RADIATION RESPONSE AND DENSITY OF BURIED OXIDE IN SEPARATION-BY-IMPLANTATION-OF-OXYGEN MATERIAL
Authors: MRSTIK BJ MCMARR PJ LAWRENCE RK
Citation: Bj. Mrstik et al., RELATIONSHIP BETWEEN RADIATION RESPONSE AND DENSITY OF BURIED OXIDE IN SEPARATION-BY-IMPLANTATION-OF-OXYGEN MATERIAL, Applied physics letters, 65(23), 1994, pp. 2993-2995
EVIDENCE OF A LONG-RANGE DENSITY GRADIENT IN SIO2-FILMS ON SI FROM H-2-PERMEABILITY MEASUREMENTS
Authors: MRSTIK BJ MCMARR PJ
Citation: Bj. Mrstik et Pj. Mcmarr, EVIDENCE OF A LONG-RANGE DENSITY GRADIENT IN SIO2-FILMS ON SI FROM H-2-PERMEABILITY MEASUREMENTS, Physical review. B, Condensed matter, 48(24), 1993, pp. 17972-17985
FABRICATION OF SILICON NANOSTRUCTURES WITH A SCANNING TUNNELING MICROSCOPE
Authors: SNOW ES CAMPBELL PM MCMARR PJ
Citation: Es. Snow et al., FABRICATION OF SILICON NANOSTRUCTURES WITH A SCANNING TUNNELING MICROSCOPE, Applied physics letters, 63(6), 1993, pp. 749-751
Risultati: 1-15 |