AAAAAA

   
Results: 1-25 | 26-50
Results: 1-25/50
SOFT-X-RAY EMISSION STUDIES OF THE BULK ELECTRONIC-STRUCTURE OF ALN, GAN, AND AL0.5GA0.5N
Authors: SMITH KE DUDA LC STAGARESCU CB DOWNES J KORAKAKIS D SINGH R MOUSTAKAS TD GUO JH NORDGREN J
Citation: Ke. Smith et al., SOFT-X-RAY EMISSION STUDIES OF THE BULK ELECTRONIC-STRUCTURE OF ALN, GAN, AND AL0.5GA0.5N, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2250-2253
DENSITY-OF-STATES, HYBRIDIZATION, AND BAND-GAP EVOLUTION IN ALXGA1-XNALLOYS
Authors: DUDA LC STAGARESCU CB DOWNES J SMITH KE KORAKAKIS D MOUSTAKAS TD GUO JH NORDGREN J
Citation: Lc. Duda et al., DENSITY-OF-STATES, HYBRIDIZATION, AND BAND-GAP EVOLUTION IN ALXGA1-XNALLOYS, Physical review. B, Condensed matter, 58(4), 1998, pp. 1928-1933
MBE GROWTH AND DOPING OF III-V NITRIDES
Authors: NG HM DOPPALAPUDI D KORAKAKIS D SINGH R MOUSTAKAS TD
Citation: Hm. Ng et al., MBE GROWTH AND DOPING OF III-V NITRIDES, Journal of crystal growth, 190, 1998, pp. 349-353
PHASE-SEPARATION AND ORDERING IN INGAN ALLOYS GROWN BY MOLECULAR-BEAMEPITAXY
Authors: DOPPALAPUDI D BASU SN LUDWIG KF MOUSTAKAS TD
Citation: D. Doppalapudi et al., PHASE-SEPARATION AND ORDERING IN INGAN ALLOYS GROWN BY MOLECULAR-BEAMEPITAXY, Journal of applied physics, 84(3), 1998, pp. 1389-1395
SCATTERING OF ELECTRONS AT THREADING DISLOCATIONS IN GAN
Authors: WEIMANN NG EASTMAN LF DOPPALAPUDI D NG HM MOUSTAKAS TD
Citation: Ng. Weimann et al., SCATTERING OF ELECTRONS AT THREADING DISLOCATIONS IN GAN, Journal of applied physics, 83(7), 1998, pp. 3656-3659
EXPERIMENTAL-DETERMINATION OF THE N-P-PARTIAL DENSITY-OF-STATES IN THE CONDUCTION-BAND OF GAN - DETERMINATION OF THE POLYTYPE FRACTIONS IN MIXED-PHASE SAMPLES
Authors: KATSIKINI M PALOURA EC MOUSTAKAS TD
Citation: M. Katsikini et al., EXPERIMENTAL-DETERMINATION OF THE N-P-PARTIAL DENSITY-OF-STATES IN THE CONDUCTION-BAND OF GAN - DETERMINATION OF THE POLYTYPE FRACTIONS IN MIXED-PHASE SAMPLES, Journal of applied physics, 83(3), 1998, pp. 1437-1445
THE ROLE OF DISLOCATION SCATTERING IN N-TYPE GAN FILMS
Authors: NG HM DOPPALAPUDI D MOUSTAKAS TD WEIMANN NG EASTMAN LF
Citation: Hm. Ng et al., THE ROLE OF DISLOCATION SCATTERING IN N-TYPE GAN FILMS, Applied physics letters, 73(6), 1998, pp. 821-823
BROADENING OF NEAR-BAND-GAP PHOTOLUMINESCENCE IN N-GAN FILMS
Authors: ILIOPOULOS E DOPPALAPUDI D NG HM MOUSTAKAS TD
Citation: E. Iliopoulos et al., BROADENING OF NEAR-BAND-GAP PHOTOLUMINESCENCE IN N-GAN FILMS, Applied physics letters, 73(3), 1998, pp. 375-377
X-RAY CHARACTERIZATION OF GAN ALGAN MULTIPLE-QUANTUM WELLS FOR ULTRAVIOLET-LASER DIODES/
Authors: KORAKAKIS D LUDWIG KF MOUSTAKAS TD
Citation: D. Korakakis et al., X-RAY CHARACTERIZATION OF GAN ALGAN MULTIPLE-QUANTUM WELLS FOR ULTRAVIOLET-LASER DIODES/, Applied physics letters, 72(9), 1998, pp. 1004-1006
OPTICAL-PROPERTIES OF GAN GROWN OVER SIO2 ON SIC SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: TORVIK JT PANKOVE JI ILIOPOULOS E NG HM MOUSTAKAS TD
Citation: Jt. Torvik et al., OPTICAL-PROPERTIES OF GAN GROWN OVER SIO2 ON SIC SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(2), 1998, pp. 244-245
ELECTRICAL CHARACTERIZATION OF GAN SIC N-P HETEROJUNCTION DIODES/
Authors: TORVIK JT LEKSONO M PANKOVE JI VANZEGHBROECK B NG HM MOUSTAKAS TD
Citation: Jt. Torvik et al., ELECTRICAL CHARACTERIZATION OF GAN SIC N-P HETEROJUNCTION DIODES/, Applied physics letters, 72(11), 1998, pp. 1371-1373
STRUCTURE OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (0001)SAPPHIRE
Authors: ROMANO LT KRUSOR BS SINGH R MOUSTAKAS TD
Citation: Lt. Romano et al., STRUCTURE OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (0001)SAPPHIRE, Journal of electronic materials, 26(3), 1997, pp. 285-289
N-K-EDGE X-RAY-ABSORPTION STUDY OF HETEROEPITAXIAL GAN FILMS
Authors: KATSIKINI M PALOURA EC FIEBERERDMANN M KALOMIROS J MOUSTAKAS TD AMANO H AKASAKI I
Citation: M. Katsikini et al., N-K-EDGE X-RAY-ABSORPTION STUDY OF HETEROEPITAXIAL GAN FILMS, Physical review. B, Condensed matter, 56(20), 1997, pp. 13380-13386
SURFACE AND BULK ELECTRONIC-STRUCTURE OF THIN-FILM WURTZITE GAN
Authors: DHESI SS STAGARESCU CB SMITH KE DOPPALAPUDI D SINGH R MOUSTAKAS TD
Citation: Ss. Dhesi et al., SURFACE AND BULK ELECTRONIC-STRUCTURE OF THIN-FILM WURTZITE GAN, Physical review. B, Condensed matter, 56(16), 1997, pp. 10271-10275
LONG-RANGE ORDER IN ALXGA1-XN FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KORAKAKIS D LUDWIG KF MOUSTAKAS TD
Citation: D. Korakakis et al., LONG-RANGE ORDER IN ALXGA1-XN FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(1), 1997, pp. 72-74
PHASE-SEPARATION IN INGAN THICK-FILMS AND FORMATION OF INGAN GAN DOUBLE HETEROSTRUCTURES IN THE ENTIRE ALLOY COMPOSITION/
Authors: SINGH R DOPPALAPUDI D MOUSTAKAS TD ROMANO LT
Citation: R. Singh et al., PHASE-SEPARATION IN INGAN THICK-FILMS AND FORMATION OF INGAN GAN DOUBLE HETEROSTRUCTURES IN THE ENTIRE ALLOY COMPOSITION/, Applied physics letters, 70(9), 1997, pp. 1089-1091
PHOTOLUMINESCENCE MICROSCOPY OF INGAN QUANTUM-WELLS
Authors: HERZOG WD SINGH R MOUSTAKAS TD GOLDBERG BB UNLU MS
Citation: Wd. Herzog et al., PHOTOLUMINESCENCE MICROSCOPY OF INGAN QUANTUM-WELLS, Applied physics letters, 70(11), 1997, pp. 1333-1335
NITROGEN IN DIAMOND THIN-FILMS
Authors: FANCIULLI M JIN S MOUSTAKAS TD
Citation: M. Fanciulli et al., NITROGEN IN DIAMOND THIN-FILMS, Physica. B, Condensed matter, 229(1), 1996, pp. 27-36
ELECTRONIC-STRUCTURE OF GAN MEASURED USING SOFT-X-RAY EMISSION AND ABSORPTION
Authors: STAGARESCU CB DUDA LC SMITH KE GUO JH NORDGREN J SINGH R MOUSTAKAS TD
Citation: Cb. Stagarescu et al., ELECTRONIC-STRUCTURE OF GAN MEASURED USING SOFT-X-RAY EMISSION AND ABSORPTION, Physical review. B, Condensed matter, 54(24), 1996, pp. 17335-17338
SUB-BANDGAP ABSORPTION OF GALLIUM NITRIDE DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
Authors: AMBACHER O RIEGER W ANSMANN P ANGERER H MOUSTAKAS TD STUTZMANN M
Citation: O. Ambacher et al., SUB-BANDGAP ABSORPTION OF GALLIUM NITRIDE DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, Solid state communications, 97(5), 1996, pp. 365-370
CHARACTERISTICS OF LIGHT-EMITTING-DIODES BASED ON GAN P-N-JUNCTIONS GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: VAUDO RP GOEPFERT D MOUSTAKAS TD BEYEA DM FREY TJ MEEHAN K
Citation: Rp. Vaudo et al., CHARACTERISTICS OF LIGHT-EMITTING-DIODES BASED ON GAN P-N-JUNCTIONS GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 79(5), 1996, pp. 2779-2783
APPLICATION OF NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE FOR THE IDENTIFICATION OF HEXAGONAL AND CUBIC POLYTYPES IN EPITAXIAL GAN
Authors: KATSIKINI M PALOURA EC MOUSTAKAS TD
Citation: M. Katsikini et al., APPLICATION OF NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE FOR THE IDENTIFICATION OF HEXAGONAL AND CUBIC POLYTYPES IN EPITAXIAL GAN, Applied physics letters, 69(27), 1996, pp. 4206-4208
GROWTH AND PROPERTIES OF INXGA1-XN ALYGA1-YN MULTIQUANTUM WELLS DEVELOPED BY MOLECULAR-BEAM EPITAXY/
Authors: SINGH R DOPPALAPUDI D MOUSTAKAS TD
Citation: R. Singh et al., GROWTH AND PROPERTIES OF INXGA1-XN ALYGA1-YN MULTIQUANTUM WELLS DEVELOPED BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(16), 1996, pp. 2388-2390
STRONGLY LOCALIZED EXCITONS IN GALLIUM NITRIDE
Authors: WETZEL C FISCHER S KRUGER J HALLER EE MOLNAR RJ MOUSTAKAS TD MOKHOV EN BARANOV PG
Citation: C. Wetzel et al., STRONGLY LOCALIZED EXCITONS IN GALLIUM NITRIDE, Applied physics letters, 68(18), 1996, pp. 2556-2558
THE OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF CUBIC AND HEXAGONAL GAN FILMS BETWEEN 1.5-EV AND 10-EV
Authors: LOGOTHETIDIS S PETALAS J CARDONA M MOUSTAKAS TD
Citation: S. Logothetidis et al., THE OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF CUBIC AND HEXAGONAL GAN FILMS BETWEEN 1.5-EV AND 10-EV, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 65-69
Risultati: 1-25 | 26-50