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1-22
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Results: 22
Authors:
MUNDER H
HERINO R
LANG W
Citation: H. Munder et al., PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1995 SPRING CONFERENCE, SYMPOSIUM .1. POROUS SILICON - MATERIAL, TECHNOLOGY ANDDEVICES, STRASBOURG, FRANCE, MAY 22-26, 1995 - PREFACE, Thin solid films, 276(1-2), 1996, pp. 11-11
Authors:
FROTSCHER U
ROSSOW U
EBERT M
PIETRYGA C
RICHTER W
BERGER MG
ARENSFISCHER R
MUNDER H
Citation: U. Frotscher et al., INVESTIGATION OF DIFFERENT OXIDATION PROCESSES FOR POROUS SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 36-39
Authors:
LONI A
CANHAM LT
BERGER MG
ARENSFISCHER R
MUNDER H
LUTH H
ARRAND HF
BENSON TM
Citation: A. Loni et al., POROUS SILICON MULTILAYER OPTICAL WAVE-GUIDES, Thin solid films, 276(1-2), 1996, pp. 143-146
Authors:
KRUGER M
ARENSFISCHER R
THONISSEN M
MUNDER H
BERGER MG
LUTH H
HILBRICH S
THEISS W
Citation: M. Kruger et al., FORMATION OF POROUS SILICON ON PATTERNED SUBSTRATES, Thin solid films, 276(1-2), 1996, pp. 257-260
Authors:
MUNDER H
SIMON J
Citation: H. Munder et J. Simon, DIVERSITY AS A PROGRAM - RESEARCH-CENTER JULICH, Advanced materials, 7(11), 1995, pp. 893
Authors:
ROSSOW U
FROTSCHER U
THONISSEN M
BERGER MG
FROHNHOFF S
MUNDER H
RICHTER W
Citation: U. Rossow et al., INFLUENCE OF THE FORMATION CONDITIONS ON THE MICROSTRUCTURE OF POROUSSILICON LAYERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 255(1-2), 1995, pp. 5-8
Authors:
FROHNHOFF S
BERGER MG
THONISSEN M
DIEKER C
VESCAN L
MUNDER H
LUTH H
Citation: S. Frohnhoff et al., FORMATION TECHNIQUES FOR POROUS SILICON SUPERLATTICES, Thin solid films, 255(1-2), 1995, pp. 59-62
Authors:
JESKE M
SCHULTZE JW
THONISSEN M
MUNDER H
Citation: M. Jeske et al., ELECTRODEPOSITION OF METALS INTO POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 63-66
Authors:
SCHOISSWOHL M
VONBARDELEBEN HJ
MORAZZANI V
GROSMAN A
ORTEGA C
FROHNHOFF S
BERGER MG
MUNDER H
Citation: M. Schoisswohl et al., ANALYSIS OF THE SURFACES STRUCTURE IN POROUS SI, Thin solid films, 255(1-2), 1995, pp. 123-127
Authors:
CAVANAGH M
POWER JR
MCGILP JF
MUNDER H
BERGER MG
Citation: M. Cavanagh et al., OPTICAL 2ND-HARMONIC GENERATION STUDIES OF THE STRUCTURE OF POROUS SILICON SURFACES, Thin solid films, 255(1-2), 1995, pp. 146-148
Authors:
SCHOISSWOHL M
VONBARDELEBEN HJ
BRATUS V
MUNDER H
Citation: M. Schoisswohl et al., DEFECTS IN LUMINESCENT AND NONLUMINESCENT POROUS SI, Thin solid films, 255(1-2), 1995, pp. 163-166
Authors:
BERGER MG
THONISSEN M
ARENSFISCHER R
MUNDER H
LUTH H
ARNTZEN M
THEISS W
Citation: Mg. Berger et al., INVESTIGATION AND DESIGN OF OPTICAL-PROPERTIES OF POROSITY SUPERLATTICES, Thin solid films, 255(1-2), 1995, pp. 313-316
Authors:
JUNG KG
SCHULTZE JW
THONISSEN M
MUNDER H
Citation: Kg. Jung et al., DEPOSITION OF ELECTRICALLY CONDUCTING POLYBITHIOPHENE INTO POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 317-320
Authors:
JESKE M
SCHULTZE JW
MUNDER H
Citation: M. Jeske et al., POROUS SILICON - BASE MATERIAL FOR NANOTECHNOLOGIES, Electrochimica acta, 40(10), 1995, pp. 1435-1438
Authors:
FROHNHOFF S
MARSO M
BERGER MG
THONISSEN M
LUTH H
MUNDER H
Citation: S. Frohnhoff et al., AN EXTENDED QUANTUM MODEL FOR POROUS SILICON FORMATION, Journal of the Electrochemical Society, 142(2), 1995, pp. 615-620
Authors:
KOYNOV S
SCHWARZ R
FISCHER T
GREBNER S
MUNDER H
Citation: S. Koynov et al., CLOSED-CHAMBER CHEMICAL-VAPOR-DEPOSITION - NEW CYCLIC METHOD FOR PREPARATION OF MICROCRYSTALLINE SILICON FILMS, JPN J A P 1, 33(8), 1994, pp. 4534-4539
Authors:
JESKE M
JUNG KG
SCHULTZE JW
THONISSEN M
MUNDER H
Citation: M. Jeske et al., XPS INVESTIGATIONS OF ELECTROCHEMICALLY MODIFIED POROUS SILICON LAYERS, Surface and interface analysis, 22(1-12), 1994, pp. 363-366
Authors:
BERGER MG
DIEKER C
THONISSEN M
VESCAN L
LUTH H
MUNDER H
THEISS W
WERNKE M
GROSSE P
Citation: Mg. Berger et al., POROSITY SUPERLATTICES - A NEW CLASS OF SI HETEROSTRUCTURES, Journal of physics. D, Applied physics, 27(6), 1994, pp. 1333-1336
Authors:
WUYTS K
WATTE J
SILVERANS RE
VANHOVE M
BORGHS G
PALMSTROM CJ
FLOREZ LT
MUNDER H
Citation: K. Wuyts et al., BACK SIDE RAMAN MEASUREMENTS ON GE PD/N-GAAS OHMIC CONTACT STRUCTURES/, Applied physics letters, 64(18), 1994, pp. 2406-2408
Authors:
MUNDER H
BERGER MG
FROHNHOFF S
THONISSEN M
LUTH H
Citation: H. Munder et al., A NONDESTRUCTIVE STUDY OF THE MICROSCOPIC STRUCTURE OF POROUS SI, Journal of luminescence, 57(1-6), 1993, pp. 5-8
Authors:
ROSSOW U
MUNDER H
THONISSEN M
THEISS W
Citation: U. Rossow et al., CHARACTERIZATION OF POROUS SILICON LAYERS BY SPECTROSCOPIC ELLIPSOMETRY, Journal of luminescence, 57(1-6), 1993, pp. 205-209
Authors:
MUNDER H
BERGER MG
FROHNHOFF S
THONISSEN M
LUTH H
JESKE M
SCHULTZE JW
Citation: H. Munder et al., INVESTIGATION OF DIFFERENT OXIDATION PROCESSES FOR POROUS SI BY XPS, Journal of luminescence, 57(1-6), 1993, pp. 223-226
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