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Results: 1-9 |
Results: 9
Effect of post-oxidation annealing on the electrical properties and oxynitride films of deposited oxide on strained-Si0.82Ge0.18 layers
Authors: Samanta, SK Maikap, S Bera, LK Banerjee, HD Maiti, CK
Citation: Sk. Samanta et al., Effect of post-oxidation annealing on the electrical properties and oxynitride films of deposited oxide on strained-Si0.82Ge0.18 layers, SEMIC SCI T, 16(8), 2001, pp. 704-707
Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers
Authors: Maikap, S Ray, SK Banerjee, SK Maiti, CK
Citation: S. Maikap et al., Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers, SEMIC SCI T, 16(3), 2001, pp. 160-163
Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si
Authors: Bera, LK Senapati, B Maikap, S Maiti, CK
Citation: Lk. Bera et al., Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si, SOL ST ELEC, 45(3), 2001, pp. 379-383
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers
Authors: Ray, SK Maikap, S Samanta, SK Banerjee, SK Maiti, CK
Citation: Sk. Ray et al., Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers, SOL ST ELEC, 45(11), 2001, pp. 1951-1955
Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures
Authors: Maikap, S Ray, SK John, S Banerjee, SK Maiti, CK
Citation: S. Maikap et al., Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures, SEMIC SCI T, 15(7), 2000, pp. 761-765
Effects of O-2/N2O-plasma treatment on nitride films on strained Si
Authors: Bera, LK Senapati, B Maikap, S Maiti, CK
Citation: Lk. Bera et al., Effects of O-2/N2O-plasma treatment on nitride films on strained Si, SOL ST ELEC, 44(9), 2000, pp. 1533-1536
Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor
Authors: Maikap, S Bera, LK Ray, SK John, S Banerjee, SK Maiti, CK
Citation: S. Maikap et al., Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor, SOL ST ELEC, 44(6), 2000, pp. 1029-1034
Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers
Authors: Senapati, B Samanta, SK Maikap, S Bera, LK Maiti, CK
Citation: B. Senapati et al., Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers, APPL PHYS L, 77(12), 2000, pp. 1840-1842
NO/O-2/NO plasma-grown oxynitride films on strained-Si1-xGex
Authors: Maikap, S Bera, LK Ray, SK Maiti, CK
Citation: S. Maikap et al., NO/O-2/NO plasma-grown oxynitride films on strained-Si1-xGex, ELECTR LETT, 35(14), 1999, pp. 1202-1203
Risultati: 1-9 |