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Results: 1-25/51
Authors:
Moerman, I
Citation: I. Moerman, Simple circuit delivers sinewave with crystal frequency accuracy, ELECTRON W, 107(1779), 2001, pp. 221-221
Authors:
Vanhollebeke, K
D'Hondt, M
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD), J ELEC MAT, 30(8), 2001, pp. 951-959
Authors:
Harris, JJ
Lee, KJ
Wang, T
Sakai, S
Bougrioua, Z
Moerman, I
Thrush, EJ
Webb, JB
Tang, H
Martin, T
Maude, DK
Portal, JC
Citation: Jj. Harris et al., Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures, SEMIC SCI T, 16(5), 2001, pp. 402-405
Authors:
Vantomme, A
Hogg, SM
Wu, MF
Pipeleers, B
Swart, M
Goodman, S
Auret, D
Iakoubovskii, K
Adriaenssens, GJ
Jacobs, K
Moerman, I
Citation: A. Vantomme et al., Suppression of rare-earth implantation-induced damage in GaN, NUCL INST B, 175, 2001, pp. 148-153
Authors:
Wu, MF
Vantomme, A
Hogg, S
Langouche, G
Van der Stricht, W
Jacobs, K
Moerman, I
Citation: Mf. Wu et al., Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001), NUCL INST B, 174(1-2), 2001, pp. 181-186
Authors:
Farvacque, JL
Bougrioua, Z
Moerman, I
Citation: Jl. Farvacque et al., Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202, PHYS REV B, 6311(11), 2001, pp. 5202
Authors:
Vanhollebeke, K
D'Hondt, M
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., MOVPE based Zn diffusion into InP and InAsP/InP hetero structures, J CRYST GR, 233(1-2), 2001, pp. 132-140
Authors:
Sharma, N
Tricker, D
Thomas, P
Bougrioua, Z
Jacobs, K
Cheyns, J
Moerman, I
Thrush, T
Considine, L
Boyd, A
Humphreys, C
Citation: N. Sharma et al., Chemical mapping of InGaN MQWs, J CRYST GR, 230(3-4), 2001, pp. 438-441
Authors:
Bougrioua, Z
Moerman, I
Sharma, N
Wallis, RH
Cheyns, J
Jacobs, K
Thrush, EJ
Considine, L
Beanland, R
Farvacque, JL
Humphreys, C
Citation: Z. Bougrioua et al., Material optimisation for AlGaN/GaN HFET applications, J CRYST GR, 230(3-4), 2001, pp. 573-578
Authors:
Modak, P
D'Hondt, M
Moerman, I
Van Daele, P
Mijlemans, P
Demeester, P
Citation: P. Modak et al., 5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates, ELECTR LETT, 37(6), 2001, pp. 377-378
Authors:
Van Caenegem, T
Van Thourhout, D
Galarza, M
Verstuyft, S
Moerman, I
Van Daele, P
Baets, R
Demeester, P
Herben, CGP
Leijtens, XJM
Smit, MK
Citation: T. Van Caenegem et al., Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy, ELECTR LETT, 37(5), 2001, pp. 296-298
Authors:
Rooman, C
Windisch, R
D'Hondt, M
Dutta, B
Modak, P
Mijlemans, P
Borghs, G
Vounckx, R
Moerman, I
Kuijk, M
Heremans, P
Citation: C. Rooman et al., High-efficiency thin-film light-emitting diodes at 650 nm, ELECTR LETT, 37(13), 2001, pp. 852-853
Authors:
Trager-Cowan, C
McColl, D
Sweeney, F
Grimson, STF
Treguer, JF
Mohammed, A
Middleton, PG
Manson-Smith, SK
O'Donnell, KP
Van der Stricht, W
Moerman, I
Demeester, P
Wu, MF
Vantomme, A
Zubia, D
Hersee, SD
Citation: C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352
Authors:
Vantomme, A
Wu, MF
Hogg, S
Langouche, G
Jacobs, K
Moerman, I
White, ME
O'Donnell, KP
Nistor, L
Van Landuyt, J
Bender, H
Citation: A. Vantomme et al., Comparative study of structural properties and photoluminescence in InGaN layers with a high In content, MRS I J N S, 5, 2000, pp. NIL_604-NIL_609
Authors:
Karouta, F
Jacobs, B
Moerman, I
Jacobs, K
Weyher, JL
Porowski, S
Crane, R
Hageman, PR
Citation: F. Karouta et al., Highly chemical reactive ion etching of gallium nitride, MRS I J N S, 5, 2000, pp. NIL_768-NIL_773
Authors:
Fewster, PF
Andrew, NL
Hughes, OH
Staddon, C
Foxon, CT
Bell, A
Cheng, TS
Wang, T
Sakai, S
Jacobs, K
Moerman, I
Citation: Pf. Fewster et al., X-ray studies of group III-nitride quantum wells with high quality interfaces, J VAC SCI B, 18(4), 2000, pp. 2300-2303
Authors:
Modak, P
D'Hondt, M
Delbeke, D
Moerman, I
Van Daele, P
Baets, R
Demeester, P
Mijlemans, P
Citation: P. Modak et al., AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates, IEEE PHOTON, 12(8), 2000, pp. 957-959
Authors:
Flamand, G
De Mesel, K
Moerman, I
Dhoedt, B
Hunziker, W
Kalmar, A
Baets, R
Van Daele, P
Leeb, W
Citation: G. Flamand et al., InP-based PIC for an optical phased-array antenna at 1.06 mu m, IEEE PHOTON, 12(7), 2000, pp. 876-878
Compliant substrate technology: Integration of mismatched materials for opto-electronic applications
Authors:
Vanhollebeke, K
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., Compliant substrate technology: Integration of mismatched materials for opto-electronic applications, PROG CRYST, 41(1-4), 2000, pp. 1-55
Authors:
Farvacaque, JL
Bougrioua, Z
Moerman, I
Citation: Jl. Farvacaque et al., Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls, J PHYS-COND, 12(49), 2000, pp. 10213-10221
Authors:
Wu, MF
Yao, SD
Vantomme, A
Hogg, S
Langouche, G
Van der Stricht, W
Jacobs, K
Moerman, I
Li, J
Zhang, GY
Citation: Mf. Wu et al., Elastic strain in InGaN and AlGaN layers, MAT SCI E B, 75(2-3), 2000, pp. 232-235
Authors:
Vanhollebeke, K
Moerman, I
Van Daele, P
Demeester, P
Citation: K. Vanhollebeke et al., Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates, J ELEC MAT, 29(7), 2000, pp. 933-939
Authors:
Modak, P
D'Hondt, M
Mijlemans, P
Moerman, I
Van Daele, P
Demeester, P
Citation: P. Modak et al., (Al)GaInP multiquantum well LEDs on GaAs and Ge, J ELEC MAT, 29(1), 2000, pp. 80-85
Authors:
Stafford, A
Irvine, SJC
Bougrioua, Z
Jacobs, K
Moerman, I
Thrush, EJ
Considine, L
Citation: A. Stafford et al., Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry, J CRYST GR, 221, 2000, pp. 142-148
Authors:
Modak, P
Delbeke, D
Moerman, I
Baets, R
Van Daele, P
Demeester, P
Citation: P. Modak et al., InAlGaP microcavity LEDs on Ge-substrates, J CRYST GR, 221, 2000, pp. 668-673