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Results: 1-25 | 26-50 | 51-75 | 76-90
Results: 26-50/90
Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
Authors: Wongmanerod, S Sernelius, BE Holtz, PO Monemar, B Mauritz, O Reginski, K Bugajski, M
Citation: S. Wongmanerod et al., Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 61(4), 2000, pp. 2794-2798
Hole effective masses in 4H SiC
Authors: Son, NT Hai, PN Chen, WM Hallin, C Monemar, B Janzen, E
Citation: Nt. Son et al., Hole effective masses in 4H SiC, PHYS REV B, 61(16), 2000, pp. 10544-10546
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
Authors: Paskova, T Tungasmita, S Valcheva, E Svedberg, EB Arnaudov, B Evtimova, S Persson, PA Henry, A Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS I J N S, 5, 2000, pp. NIL_117-NIL_123
Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Chen, WM Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 166-169
Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
Authors: Buyanova, IA Monemar, B Lindstrom, JL Hallberg, T Murin, LI Markevich, VP
Citation: Ia. Buyanova et al., Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures, MAT SCI E B, 72(2-3), 2000, pp. 146-149
Excitons as a probe of interface morphology in Cd(Zn) Se/ZnSe heterostructures
Authors: Toropov, AA Shubina, TV Sorokin, SV Kyutt, RN Ivanov, SV Pozina, GR Bergman, JP Monemar, B Karlsteen, M Willander, M
Citation: Aa. Toropov et al., Excitons as a probe of interface morphology in Cd(Zn) Se/ZnSe heterostructures, APPL SURF S, 166(1-4), 2000, pp. 278-283
Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN
Authors: Wagner, M Buyanova, IA Thinh, NQ Chen, WM Monemar, B Lindstrom, JL Amano, H Akasaki, I
Citation: M. Wagner et al., Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN, PHYS REV B, 62(24), 2000, pp. 16572-16577
Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
Authors: Wongmanerod, S Paskov, PP Holtz, PO Monemar, B Mauritz, O Reginski, K Bugajski, M
Citation: S. Wongmanerod et al., Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 62(23), 2000, pp. 15952-15961
Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study
Authors: Hai, PN Chen, WM Buyanova, IA Monemar, B Amano, H Akasaki, I
Citation: Pn. Hai et al., Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study, PHYS REV B, 62(16), 2000, pp. R10607-R10609
Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots, PHYS REV B, 62(11), 2000, pp. 7344-7349
Optical characterization of wide bandgap semiconductors
Authors: Edwards, NV Bremser, MD Batchelor, AD Buyanova, IA Madsen, LD Yoo, SD Welhkamp, T Wilmers, K Cobet, C Esser, N Davis, RF Aspnes, DE Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells
Authors: Ivanov, SV Toropov, AA Shubina, TV Lebedev, AV Sorokin, SV Sitnikova, AA Kop'ev, PS Reuscher, G Keim, M Bensing, F Waag, A Landwehr, G Pozina, G Bergman, JP Monemar, B
Citation: Sv. Ivanov et al., MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells, J CRYST GR, 214, 2000, pp. 109-114
Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe
Authors: Godlewski, M Narkowicz, R Wojtowicz, T Bergman, JP Monemar, B
Citation: M. Godlewski et al., Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe, J CRYST GR, 214, 2000, pp. 420-423
Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices
Authors: Toropov, AA Shubina, TV Lebedev, AV Sorokin, SV Ivanov, SV Pozina, GR Bergman, JP Monemar, B
Citation: Aa. Toropov et al., Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices, J CRYST GR, 214, 2000, pp. 806-809
Influence of growth rate on the structure of thick GaN layers grown by HVPE
Authors: Paskova, T Goldys, EM Yakimova, R Svedberg, EB Henry, A Monemar, B
Citation: T. Paskova et al., Influence of growth rate on the structure of thick GaN layers grown by HVPE, J CRYST GR, 208(1-4), 2000, pp. 18-26
Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
Authors: Pozina, G Bergman, JP Monemar, B Takeuchi, T Amano, H Akasaki, I
Citation: G. Pozina et al., Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells, J APPL PHYS, 88(5), 2000, pp. 2677-2681
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
Authors: Ratnikov, V Kyutt, R Shubina, T Paskova, T Valcheva, E Monemar, B
Citation: V. Ratnikov et al., Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, J APPL PHYS, 88(11), 2000, pp. 6252-6259
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots, APPL PHYS L, 77(6), 2000, pp. 812-814
InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport
Authors: Pozina, G Bergman, JP Monemar, B Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: G. Pozina et al., InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport, APPL PHYS L, 77(11), 2000, pp. 1638-1640
Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure" [Appl. Phys. Lett. 73, 2471 (1998)]
Authors: Monemar, B Bergman, JP Holtz, PO
Citation: B. Monemar et al., Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure" [Appl. Phys. Lett. 73, 2471 (1998)], APPL PHYS L, 76(5), 2000, pp. 655-655
Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
Authors: Pozina, G Bergman, JP Monemar, B Yamaguchi, S Amano, H Akasaki, I
Citation: G. Pozina et al., Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant, APPL PHYS L, 76(23), 2000, pp. 3388-3390
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Authors: Valcheva, E Paskova, T Tungasmita, S Persson, POA Birch, J Svedberg, EB Hultman, L Monemar, B
Citation: E. Valcheva et al., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPL PHYS L, 76(14), 2000, pp. 1860-1862
Optical and transport properties of CdSe/ZnSe self-organized nanostructures: 1-dimensional versus 3-dimensional quantum confinement
Authors: Toropov, AA Ivanov, SV Shubina, TV Sorokin, SV Lebedev, AV Sitnikova, AA Kop'ev, PS Willander, M Pozina, G Bergman, P Monemar, B
Citation: Aa. Toropov et al., Optical and transport properties of CdSe/ZnSe self-organized nanostructures: 1-dimensional versus 3-dimensional quantum confinement, JPN J A P 1, 38(1B), 1999, pp. 566-569
Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions
Authors: Stoklitskii, SA Murzin, VN Mityagin, YA Monemar, B Holtz, PO
Citation: Sa. Stoklitskii et al., Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions, SEMICONDUCT, 33(1), 1999, pp. 72-79
Risultati: 1-25 | 26-50 | 51-75 | 76-90