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Results:
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Results: 19
Authors:
Gunzel, R
Shevshenko, N
Matz, W
Mucklich, A
Celis, JP
Citation: R. Gunzel et al., Structural investigation and wear resistance of submicron TiN coatings obtained by a hybrid plasma immersion ion implantation process, SURF COAT, 142, 2001, pp. 978-983
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range effect in proximity gettering of impurities in silicon, VACUUM, 62(2-3), 2001, pp. 309-313
Authors:
Strasser, G
Gianordoli, S
Schrenk, W
Gornik, E
Mucklich, A
Helm, M
Citation: G. Strasser et al., MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers, J CRYST GR, 227, 2001, pp. 197-201
Authors:
Panknin, D
Wirth, H
Mucklich, A
Skorupa, W
Citation: D. Panknin et al., Electrical and microstructural properties of highly boron-implantation doped 6H-SiC, J APPL PHYS, 89(6), 2001, pp. 3162-3167
Authors:
Noetzel, J
Meyer, DC
Tselev, A
Mucklich, A
Paufler, P
Prokert, F
Wieser, E
Moller, W
Citation: J. Noetzel et al., Amorphization of Fe/Al: bulk and thin-film effects, APPL PHYS A, 71(1), 2000, pp. 47-54
Authors:
Hornauer, U
Richter, E
Matz, W
Reuther, H
Mucklich, A
Wieser, E
Moller, W
Schumacher, G
Schutze, M
Citation: U. Hornauer et al., Microstructure and oxidation kinetics of intermetallic TiAl after Si- and Mo- ion implantation, SURF COAT, 128, 2000, pp. 418-422
Authors:
Turos, A
Gawlik, G
Jagielski, J
Stonert, A
Madi, N
Matz, W
Mucklich, A
Citation: A. Turos et al., Atomic transport effects in Kr-ion bombarded ZrO2/Fe ternary system, NUCL INST B, 166, 2000, pp. 128-132
Authors:
Hofgen, A
Heera, V
Mucklich, A
Eichhorn, F
Skorupa, W
Citation: A. Hofgen et al., Ion-beam-induced crystal grain nucleation in amorphous silicon carbide, NUCL INST B, 161, 2000, pp. 917-921
Authors:
Tsyganov, I
Wieser, E
Matz, W
Mucklich, A
Reuther, H
Citation: I. Tsyganov et al., Formation of the phases Ti3Al and TiAl by high-dose implantation of aluminium into titanium, NUCL INST B, 161, 2000, pp. 1069-1074
Authors:
Tsyganov, I
Wieser, E
Matz, W
Mucklich, A
Reuther, H
Pham, MT
Richter, E
Citation: I. Tsyganov et al., Phase formation in aluminium implanted titanium and the correlated modification of mechanical and corrosive properties, THIN SOL FI, 376(1-2), 2000, pp. 188-197
Authors:
Gueorguiev, YM
Kogler, R
Peeva, K
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range gettering of copper in high-energy ion-implanted silicon, J APPL PHYS, 88(11), 2000, pp. 6934-6936
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., High-energy ion-implantation-induced gettering of copper in silicon beyondthe projected ion range: The trans-projected-range effect, J APPL PHYS, 88(10), 2000, pp. 5645-5652
Authors:
Panknin, D
Wirth, H
Mucklich, A
Skorupa, W
Citation: D. Panknin et al., Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 363-367
Authors:
Noetzel, J
Handstein, A
Mucklich, A
Prokert, F
Reuther, H
Thomas, J
Wieser, E
Moller, W
Citation: J. Noetzel et al., Co/Cu solid solution prepared by ion implantation, J MAGN MAGN, 205(2-3), 1999, pp. 177-183
Authors:
Fichtner, PFP
Kaschny, JR
Behar, M
Yankov, RA
Mucklich, A
Skorupa, W
Citation: Pfp. Fichtner et al., The effects of the annealing temperature on the formation of helium-filledstructures in silicon, NUCL INST B, 148(1-4), 1999, pp. 329-333
Authors:
Kogler, R
Eichhorn, F
Mucklich, A
Danilin, AB
Skorupa, W
Citation: R. Kogler et al., Distribution of gettering centres at a buried amorphous layer in silicon, NUCL INST B, 148(1-4), 1999, pp. 334-339
Authors:
Pezoldt, J
Yankov, RA
Mucklich, A
Fukarek, W
Voelskow, M
Reuther, H
Skorupa, W
Citation: J. Pezoldt et al., A novel (SiC)(1-x)(AlN)(x) compound synthesized using ion beams, NUCL INST B, 147(1-4), 1999, pp. 273-278
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Impurity gettering by high-energy ion implantation in silicon beyond the projected range, APPL PHYS L, 75(22), 1999, pp. 3467-3469
Authors:
Huber, H
Assmann, W
Karamian, SA
Mieskes, HD
Nolte, H
Gazis, E
Kokkoris, M
Kossionides, S
Vlastou, R
Grotzschel, R
Mucklich, A
Prusseit, W
Citation: H. Huber et al., Heavy-ion induced damage of crystalline Ge and W in the 0.5-8 A MeV range, NUCL INST B, 146(1-4), 1998, pp. 309-316
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