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Results:
1-13
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Results: 13
Authors:
Courtot-Descharles, A
Paillet, P
Leray, JL
Musseau, O
Citation: A. Courtot-descharles et al., First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories, MAT SC S PR, 3(1-2), 2000, pp. 143-148
Authors:
Ferlet-Cavrois, V
Colladant, T
Paillet, P
Leray, JL
Musseau, O
Schwank, JR
Shaneyfelt, MR
Pelloie, JL
de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188
Authors:
Musseau, O
Ferlet-Cavrois, V
Pelloie, JL
Buchner, S
McMorrow, D
Campbell, AB
Citation: O. Musseau et al., Laser probing of bipolar amplification in 0.25-mu m MOS/SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2196-2203
Authors:
Torres, A
Flament, O
Marcandella, C
Musseau, O
Leray, JL
Citation: A. Torres et al., Spatial and spectral oxide trap distributions in power MOSFETs, IEEE NUCL S, 47(3), 2000, pp. 587-591
Authors:
Ferlet-Cavrois, V
Paillet, P
Musseau, O
Leray, JL
Faynot, O
Raynaud, C
Pelloie, JL
Citation: V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
Authors:
Pailharey, E
Baggio, J
D'hose, C
Musseau, O
Citation: E. Pailharey et al., Physical mechanisms involved during transient irradiation of a 1300 nm laser diode., IEEE NUCL S, 47(3), 2000, pp. 682-687
Authors:
Ferlet-Cavrois, V
Bracale, A
Marcandella, C
Musseau, O
Pelloie, JL
Raynaud, C
Faynot, O
Citation: V. Ferlet-cavrois et al., Designing MOS/SOI transistors for high frequency and low voltage applications, MICROEL ENG, 48(1-4), 1999, pp. 351-354
Authors:
Musseau, O
Torres, A
Campbell, AB
Knudson, AR
Buchner, S
Fischer, B
Schlogl, M
Briand, P
Citation: O. Musseau et al., Medium-energy heavy-ion single-event-burnout imaging of power MOSFET's, IEEE NUCL S, 46(6), 1999, pp. 1415-1420
Authors:
Dentan, M
Abbon, P
Borgeaud, P
Delagnes, E
Fourches, N
Lachartre, D
Lugiez, F
Paul, B
Rouger, M
Truche, R
Blanc, JP
Faynot, O
Leroux, C
Delevoye-Orsier, E
Pelloie, JL
de Pontcharra, J
Flament, O
Guebhard, JM
Leray, JL
Montaron, J
Musseau, O
Vitez, A
Le Mouellic, C
Corbiere, T
Dantec, A
Festes, G
Martinez, J
Rodde, K
Citation: M. Dentan et al., Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology., IEEE NUCL S, 46(4), 1999, pp. 822-828
Authors:
Musseau, O
Citation: O. Musseau, The effects of cosmic ions on electronic components, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 781-890
Authors:
Ferlet-Cavrois, V
Quoizola, S
Musseau, O
Flament, O
Leray, JL
Pelloie, JL
Raynaud, C
Faynot, O
Citation: V. Ferlet-cavrois et al., Total dose induced latch in short channel NMOS/SOI transistors, IEEE NUCL S, 45(6), 1998, pp. 2458-2466
Authors:
Dodd, PE
Musseau, O
Shaneyfelt, MR
Sexton, FW
D'hose, C
Hash, GL
Martinez, M
Loemker, RA
Leray, JL
Winokur, PS
Citation: Pe. Dodd et al., Impact of ion energy on single-event upset, IEEE NUCL S, 45(6), 1998, pp. 2483-2491
Authors:
Musseau, O
Ferlet-Cavrois, V
Campbell, AB
Knudson, AR
Buchner, S
Fischer, B
Schlogl, M
Citation: O. Musseau et al., Technique to measure an ion track profile, IEEE NUCL S, 45(6), 1998, pp. 2563-2570
Risultati:
1-13
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