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Results:
1-19
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Results: 19
Authors:
BIANCONI M
ALBERTAZZI E
CARNERA A
LULLI G
NIPOTI R
SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING ANALYSIS OF VIRGIN 6H-SIC - EXPERIMENTS AND MONTE-CARLO SIMULATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1267-1271
Authors:
NIPOTI R
DONOLATO C
GOVONI D
ROSSI P
EGENI GP
RUDELLO V
Citation: R. Nipoti et al., A STUDY OF HE-INDUCED DAMAGE IN SILICON BY QUANTITATIVE-ANALYSIS OF CHARGE COLLECTION EFFICIENCY DATA( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1340-1344
Authors:
CERVELLERA F
DONOLATO C
EGENI GP
FORTUNA G
NIPOTI R
POLESELLO P
ROSSI P
RUDELLO V
VITTONE E
VIVIANI M
Citation: F. Cervellera et al., THE LEGNARO ION MICROPROBE IN LOW CURRENT EXPERIMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 25-30
Authors:
BIANCONI M
LULLI G
SPALLACCI F
ALBERTAZZI E
NIPOTI R
CARNERA A
CELLINI C
Citation: M. Bianconi et al., RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 689-695
Authors:
NIPOTI R
BIANCONI MSM
MILITA S
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED (100) SI CRYSTALS - STRAIN BY X-RAY-DIFFRACTOMETRY VERSUS INTERSTITIALS BY RBS-CHANNELING (VOL 120, PG 64, 1996), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 699-699
Authors:
DONOLATO C
NIPOTI R
Citation: C. Donolato et R. Nipoti, SIMULATION OF PULSE-HEIGHT SPECTRA IN ION-BEAM-INDUCED CHARGE MICROSCOPY OF POLYCRYSTALLINE SILICON, Journal of applied physics, 82(2), 1997, pp. 742-747
Authors:
LULLI G
ALBERTAZZI E
BIANCONI M
NIPOTI R
CERVERA M
CAMERA A
CELLINI C
Citation: G. Lulli et al., STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI, Journal of applied physics, 82(12), 1997, pp. 5958-5964
Authors:
LARSEN AN
ORAIFEARTAIGH C
BARKLIE RC
HOLM B
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
NIPOTI R
LINDNER JKN
MESLI A
GROB JJ
CRISTIANO F
HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
Authors:
NIPOTI R
ALBERTAZZI E
BIANCONI M
LOTTI R
LULLI G
CERVERA M
CARNERA A
Citation: R. Nipoti et al., ION-IMPLANTATION INDUCED SWELLING IN 6H-SIC, Applied physics letters, 70(25), 1997, pp. 3425-3427
Authors:
DONOLATO C
NIPOTI R
GOVONI D
EGENI GP
RUDELLO V
ROSSI P
Citation: C. Donolato et al., IMAGES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON SOLAR-CELLS BY ELECTRON AND ION-BEAM-INDUCED CHARGE COLLECTION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 306-310
Authors:
NIPOTI R
SERVIDORI M
BIANCONI M
MILITA S
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED [100]SI CRYSTALS - STRAIN BY X-RAY-DIFFRACTOMETRY VERSUS INTERSTITIALS BY RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 64-67
Authors:
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
CANTIANO M
Citation: E. Albertazzi et al., DIFFERENT METHODS FOR THE DETERMINATION OF DAMAGE PROFILES IN SI FROMRBS-CHANNELING SPECTRA - A COMPARISON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 128-132
Authors:
NIPOTI R
LULLI G
MILITA S
SERVIDORI M
CELLINI C
CARNERA A
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED SILICON - FLUENCE DEPENDENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 148-151
Authors:
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
CARNERA A
CELLINI C
Citation: E. Albertazzi et al., DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 152-155
Authors:
PRIOLO F
SPINELLA C
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
LINDNER JKN
MESLI A
BARKLIE RC
SEALY L
HOLM B
LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
Authors:
SEALY L
BARKLIE RC
LULLI G
NIPOTI R
BALBONI R
MILITA S
SERVIDORI M
Citation: L. Sealy et al., EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 215-218
Authors:
BIANCONI M
NIPOTI R
CANTIANO M
GASPAROTTO A
SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING SPECTRA - SIMULATION OF AS-IMPLANTED SI SAMPLES THROUGH AN EMPIRICAL-FORMULA FOR (100) AXIAL DECHANNELING OF HE IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(4), 1994, pp. 507-511
Authors:
BENTINI GG
BIANCONI M
NIPOTI R
Citation: Gg. Bentini et al., ENERGY-LOSS AND EQUILIBRIUM CHARGE-DISTRIBUTION OF NITROGEN-IONS TRANSMITTED THROUGH THIN SILICON-CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 33-36
Authors:
FABBRI R
LULLI G
NIPOTI R
SERVIDORI M
Citation: R. Fabbri et al., X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 624-627
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1-19
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