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Results: 1-25/54
Authors:
SUTO K
KIMURA T
SAITO T
NISHIZAWA J
Citation: K. Suto et al., RAMAN AMPLIFICATION IN GAPALXGA1-XP WAVE-GUIDES FOR LIGHT FREQUENCY DISCRIMINATION (VOL 145, PG 105, 1998), IEE proceedings. Optoelectronics, 145(4), 1998, pp. 247-247
Authors:
SUTO K
KIMURA T
SAITO T
NISHIZAWA J
Citation: K. Suto et al., RAMAN AMPLIFICATION IN GAP-ALXGA1-XP WAVE-GUIDES FOR LIGHT FREQUENCY DISCRIMINATION, IEE proceedings. Optoelectronics, 145(2), 1998, pp. 105-108
Authors:
TONGJUN Y
MATUO T
SUTO K
NISHIZAWA J
Citation: Y. Tongjun et al., GREEN LIGHT EMISSIONS FROM GAP-ALXGA1-XP DOUBLE HETEROSTRUCTURES, Journal of electronic materials, 27(9), 1998, pp. 1053-1058
Authors:
WATANABE H
MOTOZAWA M
SUTO K
NISHIZAWA J
Citation: H. Watanabe et al., STOICHIOMETRY-DEPENDENT DEEP LEVELS IN UNDOPED P-TYPE AL0.38GA0.62AS GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(8), 1998, pp. 979-984
Authors:
NUGRAHA,"TAMURA W
ITOH O
SUTO K
NISHIZAWA J
Citation: W. Nugraha,"tamura et al., TE VAPOR-PRESSURE DEPENDENCE OF THE PN JUNCTION PROPERTIES OF PBTE LIQUID-PHASE EPITAXIAL LAYERS, Journal of electronic materials, 27(5), 1998, pp. 438-441
Authors:
SASAKI T
NISHIZAWA J
ESASHI M
Citation: T. Sasaki et al., DEEP LEVELS AND MINORITY-CARRIER LIFETIME IN PROTON-IRRADIATED SILICON PIN DIODE, Journal of applied physics, 83(8), 1998, pp. 4069-4074
Authors:
NISHIZAWA J
PLOTKA P
Citation: J. Nishizawa et P. Plotka, SCATTERING FREE-ELECTRON TRANSPORT IN DEVICES FABRICATED WITH MOLECULAR LAYER EPITAXY, Indian Journal of Pure & Applied Physics, 36(7), 1998, pp. 398-405
Authors:
LIU YX
PLOTKA P
SUTO K
OYAMA Y
NISHIZAWA J
Citation: Yx. Liu et al., TUNNELING THROUGH ULTRATHIN GAAS N(-P(++)-N(++) BARRIER GROWN BY MOLECULAR LAYER EPITAXY(+)), I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2551-2554
Authors:
NISHIZAWA J
OYAMA Y
Citation: J. Nishizawa et Y. Oyama, EXCITATION PHOTOCAPACITANCE STUDY OF IONIZED LEVELS IN N-TYPE GAAS OBSERVED DURING PHOTOQUENCHING, Journal of the Electrochemical Society, 145(8), 1998, pp. 2892-2894
Authors:
NISHIZAWA J
MURAI A
OYAMA Y
SUTO K
Citation: J. Nishizawa et al., EFFECTS OF STOICHIOMETRY AND TE CONCENTRATION ON THE DEEP LEVELS IN LIQUID-PHASE EPITAXIALLY GROWN N-TYPE AL0.3GA0.7AS5, Journal of the Electrochemical Society, 145(8), 1998, pp. 2905-2909
Authors:
SUTO K
KIMURA T
NISHIZAWA J
Citation: K. Suto et al., NEARLY PERFECT OUTPUT POWER SATURATION OF THE SEMICONDUCTOR RAMAN LASER, IEE proceedings. Optoelectronics, 144(2), 1997, pp. 87-90
Authors:
NISHIZAWA J
KURABAYASHI T
Citation: J. Nishizawa et T. Kurabayashi, MONOMOLECULAR LAYER EPITAXY OF GAAS FOR IDEAL STATIC INDUCTION TRANSISTOR, Advanced materials for optics and electronics, 7(4), 1997, pp. 183-193
Authors:
NISHIZAWA J
KURABAYASHI T
Citation: J. Nishizawa et T. Kurabayashi, SURFACE-REACTIONS AND KINETIC PHENOMENA IN MOLECULAR LAYER EPITAXY OFIII-V SEMICONDUCTOR COMPOUNDS, Thin solid films, 306(2), 1997, pp. 179-186
Authors:
SAKURAI F
MOTOZAWA M
SUTO K
NISHIZAWA J
Citation: F. Sakurai et al., LIQUID-PHASE EPITAXIAL P-TYPE ZNSE GROWTH FROM A SE SOLUTION AND FABRICATION OF PN JUNCTIONS WITH DIFFUSED N-TYPE LAYERS, Journal of crystal growth, 172(1-2), 1997, pp. 75-82
Authors:
NISHIZAWA J
KIM K
OYAMA Y
SUTO K
Citation: J. Nishizawa et al., STOICHIOMETRY-DEPENDENT DEEP LEVELS IN P-TYPE INP, Journal of applied physics, 81(7), 1997, pp. 3151-3154
Authors:
LIU YX
PLOTKA P
SUTO K
OYAMA Y
NISHIZAWA J
Citation: Yx. Liu et al., CARRIER INJECTION BY STATIC INDUCTION MECHANISM IN MLE-GROWN PLANAR-DOPED BARRIER N(-I-P(+)-I-N(+) STRUCTURES()), I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 195-197
Authors:
NISHIZAWA J
NAKAI A
MATSUDA K
BAN T
NAGATA K
Citation: J. Nishizawa et al., REACTIVE OXYGEN SPECIES PLAY AN IMPORTANT ROLE IN THE ACTIVATION OF HEAT-SHOCK FACTOR-1 IN ISCHEMIA REPERFUSED HEART, Circulation, 96(8), 1997, pp. 1741-1741
Authors:
SUTO K
KIMURA T
NISHIZAWA J
Citation: K. Suto et al., FABRICATION AND CHARACTERISTICS OF TAPERED WAVE-GUIDE SEMICONDUCTOR RAMAN LASERS, IEE proceedings. Optoelectronics, 143(2), 1996, pp. 113-118
Authors:
NISHIZAWA J
SAKURABA H
KURABAYASHI T
Citation: J. Nishizawa et al., SURFACE-REACTION OF TRIMETHYLGALLIUM ON GAAS (VOL 14, PG 136, 1996), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3604-3604
Authors:
NISHIZAWA J
SAKURABA H
KURABAYASHI T
Citation: J. Nishizawa et al., SURFACE-REACTION OF TRIMETHYLGALLIUM ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 136-146
Authors:
NISHIZAWA J
KURABAYASHI T
Citation: J. Nishizawa et T. Kurabayashi, REACTION-MECHANISMS OF MONO-MOLECULAR LAYER GROWTH USING CHEMICAL ADSORPTION, Applied surface science, 106, 1996, pp. 11-21
Authors:
NISHIZAWA J
OYAMA Y
PLOTKA P
SAKURABA H
Citation: J. Nishizawa et al., OPTIMIZATION OF LOW-TEMPERATURE SURFACE-TREATMENT OF GAAS CRYSTAL, Surface science, 348(1-2), 1996, pp. 105-114
Authors:
NUGRAHA,"SUTO K
ITOH O
NISHIZAWA J
YOKOTA Y
Citation: K. Nugraha,"suto et al., GROWTH AND ELECTRICAL-PROPERTIES OF PBTE BULK CRYSTALS GROWN BY THE BRIDGMAN METHOD UNDER CONTROLLED TELLURIUM OR LEAD VAPOR-PRESSURE, Journal of crystal growth, 165(4), 1996, pp. 402-407
Authors:
NUGRAHA,"ITOH O
SUTO K
NISHIZAWA J
Citation: O. Nugraha,"itoh et al., GROWTH AND ELECTRICAL-PROPERTIES OF PBTE EPITAXIAL LAYERS GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE LIQUID-PHASE EPITAXY, Journal of crystal growth, 163(4), 1996, pp. 353-358
Authors:
SUTO K
ADACHI S
YONEYAMA T
NISHIZAWA J
Citation: K. Suto et al., FREE-EXCITON RECOMBINATION IN GAP AND GAP ALXGA1-XP LAYERS GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE/, Journal of crystal growth, 160(1-2), 1996, pp. 13-20