Authors:
KRUCK P
WEICHSELBAUM A
HELM M
FROMHERZ T
BAUER G
NUTZEL JF
ABSTREITER G
Citation: P. Kruck et al., POLARIZATION-DEPENDENT INTERSUBBAND ABSORPTION AND NORMAL-INCIDENCE INFRARED DETECTION IN P-TYPE SI SIGE QUANTUM-WELLS/, Superlattices and microstructures, 23(1), 1998, pp. 61-66
Authors:
HOLY V
DARHUBER AA
STANGL J
BAUER G
NUTZEL JF
ABSTREITER G
Citation: V. Holy et al., X-RAY REFLECTIVITY RECIPROCAL SPACE MAPPING OF STRAINED SIGE SI SUPERLATTICES/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 419-428
Authors:
HELM M
KRUCK P
FROMHERZ T
WEICHSELBAUM A
SETO M
BAUER G
MOUSSA Z
BOUCAUD P
JULIEN FH
LOURTIOZ JM
NUTZEL JF
ABSTREITER G
Citation: M. Helm et al., IR STUDIES OF P-TYPE SI SIGE QUANTUM-WELLS - INTERSUBBAND ABSORPTION,IR DETECTORS, AND 2ND-HARMONIC GENERATION/, Thin solid films, 294(1-2), 1997, pp. 330-335
Authors:
ENGEL C
BAUMGARTNER P
HOLZMANN M
NUTZEL JF
ABSTREITER G
Citation: C. Engel et al., FABRICATION OF LATERAL NPN-STRUCTURES AND PNP-STRUCTURES ON SI SIGE BY FOCUSED LASER-BEAM WRITING AND THEIR APPLICATION AS PHOTODETECTORS/, Journal of applied physics, 81(9), 1997, pp. 6455-6460
Authors:
FROMHERZ T
KRUCK P
HELM M
BAUER G
NUTZEL JF
ABSTREITER G
Citation: T. Fromherz et al., POLARIZATION DEPENDENCE OF INTERSUBBAND ABSORPTION AND PHOTOCONDUCTIVITY IN P-TYPE SIGE QUANTUM-WELLS, Superlattices and microstructures, 20(2), 1996, pp. 237-243
Authors:
JAUMANN M
STIMMER J
SCHITTENHELM P
NUTZEL JF
ABSTREITER G
NEUFELD E
HOLLANDER B
BUCHAL C
Citation: M. Jaumann et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ER-IMPLANTED SILICON DIODES GROWN BY MBE, Applied surface science, 102, 1996, pp. 327-330
Citation: Jf. Nutzel et G. Abstreiter, SEGREGATION AND DIFFUSION ON SEMICONDUCTOR SURFACES, Physical review. B, Condensed matter, 53(20), 1996, pp. 13551-13558
Authors:
KRUCK P
SETO M
HELM M
MOUSSA Z
BOUCAUD P
JULIEN FH
LOURTIOZ JM
NUTZEL JF
ABSTREITER G
Citation: P. Kruck et al., 2ND-ORDER SUSCEPTIBILITIES RELATED TO VALENCE-BAND TRANSITIONS IN ASYMMETRIC SI SIGE QUANTUM-WELLS/, Solid-state electronics, 40(1-8), 1996, pp. 763-766
Authors:
KRUCK P
HELM M
FROMHERZ T
BAUER G
NUTZEL JF
ABSTREITER G
Citation: P. Kruck et al., MEDIUM-WAVELENGTH, NORMAL-INCIDENCE, P-TYPE SI SIGE QUANTUM-WELL INFRARED PHOTODETECTOR WITH BACKGROUND LIMITED PERFORMANCE UP TO 85 K/, Applied physics letters, 69(22), 1996, pp. 3372-3374
Authors:
FROMHERZ T
KRUCK P
HELM M
BAUER G
NUTZEL JF
ABSTREITER G
Citation: T. Fromherz et al., TRANSVERSE MAGNETIC AND TRANSVERSE ELECTRIC POLARIZED INTERSUBBAND ABSORPTION AND PHOTOCONDUCTIVITY IN P-TYPE SIGE QUANTUM-WELLS, Applied physics letters, 68(25), 1996, pp. 3611-3613
Authors:
STIMMER J
REITTINGER A
NUTZEL JF
ABSTREITER G
HOLZBRECHER H
BUCHAL C
Citation: J. Stimmer et al., ELECTROLUMINESCENCE OF ERBIUM-OXYGEN-DOPED SILICON DIODES GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 68(23), 1996, pp. 3290-3292
Authors:
HOLZMANN M
BAUMGARTNER P
ENGEL C
NUTZEL JF
ABSTREITER G
SCHAFFLER F
Citation: M. Holzmann et al., FABRICATION OF N-CHANNEL AND P-CHANNEL IN-PLANE-GATE TRANSISTORS FROMSI SIGE/GE HETEROSTRUCTURES BY FOCUSED LASER-BEAM WRITING/, Applied physics letters, 68(21), 1996, pp. 3025-3027
Authors:
LI JH
HOLY V
BAUER G
NUTZEL JF
ABSTREITER G
Citation: Jh. Li et al., INVESTIGATION OF STRAIN RELAXATION OF GE1-XSIX EPILAYERS ON GE(001) BY HIGH-RESOLUTION X-RAY RECIPROCAL SPACE MAPPING, Semiconductor science and technology, 10(12), 1995, pp. 1621-1628
Authors:
NUTZEL JF
ENGELHARDT CM
WIESNER R
TOBBEN D
HOLZMANN M
ABSTREITER G
Citation: Jf. Nutzel et al., GROWTH AND PROPERTIES OF HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES IN GEON RELAXED SI SIGE, GE/SICE BUFFERS AND GE SUBSTRATES/, Journal of crystal growth, 150(1-4), 1995, pp. 1011-1014
Citation: Jf. Nutzel et G. Abstreiter, COMPARISON OF P AND SB AS N-DOPANTS FOR SI MOLECULAR-BEAM EPITAXY, Journal of applied physics, 78(2), 1995, pp. 937-940
Authors:
SCHITTENHELM P
GAIL M
BRUNNER J
NUTZEL JF
ABSTREITER G
Citation: P. Schittenhelm et al., PHOTOLUMINESCENCE STUDY OF THE CROSSOVER FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH FOR GE ON SI(100), Applied physics letters, 67(9), 1995, pp. 1292-1294
Authors:
FROMHERZ T
KOPPENSTEINER E
HELM M
BAUER G
NUTZEL JF
ABSTREITER G
Citation: T. Fromherz et al., INTERSUBBAND ABSORPTION IN MODULATION-DOPED P-TYPE SI1-XGEX QUANTUM-WELLS - THEORY AND EXPERIMENT, Superlattices and microstructures, 15(3), 1994, pp. 229-232
Authors:
FROMHERZ T
KOPPENSTEINER E
HELM M
BAUER G
NUTZEL JF
ABSTREITER G
Citation: T. Fromherz et al., HOLE ENERGY-LEVELS AND INTERSUBBAND ABSORPTION IN MODULATION-DOPED SISI1-XGEX MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 50(20), 1994, pp. 15073-15085
Authors:
FROMHERZ T
KOPPENSTEINER E
HELM M
BAUER G
NUTZEL JF
ABSTREITER G
Citation: T. Fromherz et al., SYSTEMATIC STUDY OF INTERSUBBAND ABSORPTION IN MODULATION-DOPED P-TYPE SI SI(1-X)GE(X) QUANTUM-WELLS/, Solid-state electronics, 37(4-6), 1994, pp. 941-944