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Results:
1-21
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Results: 21
Authors:
ORTIZCONDE A
RODRIGUEZ J
SANCHEZ FJG
LIOU JJ
Citation: A. Ortizconde et al., AN IMPROVED DEFINITION FOR MODELING THE THRESHOLD VOLTAGE OF MOSFETS, Solid-state electronics, 42(9), 1998, pp. 1743-1746
Authors:
HASSAN MR
LIOU JJ
ORTIZCONDE A
Citation: Mr. Hassan et al., GATE OXIDE THICKNESS DEPENDENCE OF LDD MOSFET PARAMETERS, Solid-state electronics, 41(8), 1997, pp. 1199-1201
Authors:
HASSAN MR
LIOU JJ
ORTIZCONDE A
SANCHEZ FJG
FERNANDES EG
Citation: Mr. Hassan et al., DRAIN AND SOURCE RESISTANCES OF SHORT-CHANNEL LDD MOSFETS, Solid-state electronics, 41(5), 1997, pp. 778-780
Authors:
ORTIZCONDE A
FERNANDES EDG
LIOU JJ
HASSAN MR
GARCIASANCHEZ FJ
DEMERCATO G
WONG WS
Citation: A. Ortizconde et al., A NEW APPROACH TO EXTRACT THE THRESHOLD VOLTAGE OF MOSFETS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1523-1528
Authors:
LATIF Z
ORTIZCONDE A
LIOU JJ
SANCHEZ FJG
Citation: Z. Latif et al., A STUDY OF THE VALIDITY OF CAPACITANCE-BASED METHOD FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF MOSFETS, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 340-343
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
SANCHEZ FG
Citation: Y. Yue et al., A COMPREHENSIVE STUDY OF HIGH-LEVEL FREE-CARRIER INJECTION IN BIPOLARJUNCTION TRANSISTORS, JPN J A P 1, 35(7), 1996, pp. 3845-3851
Authors:
SANCHEZ FJG
ORTIZCONDE A
LIOU JJ
Citation: Fjg. Sanchez et al., PARASITIC SERIES RESISTANCE-INDEPENDENT METHOD FOR DEVICE-MODEL PARAMETER EXTRACTION, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 68-70
Authors:
LATIF Z
LIOU JJ
ORTIZCONDE A
SANCHEZ FJG
WANG W
CHEN YG
Citation: Z. Latif et al., ANALYSIS OF THE VALIDITY OF METHODS FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL LDD MOSFETS, Solid-state electronics, 39(7), 1996, pp. 1093-1094
Authors:
ORTIZCONDE A
SANCHEZ FJG
LIOU JJ
Citation: A. Ortizconde et al., AN IMPROVED METHOD FOR EXTRACTING THE DIFFERENCE BETWEEN DRAIN AND SOURCE RESISTANCES IN MOSFETS, Solid-state electronics, 39(3), 1996, pp. 419-421
Authors:
ORTIZCONDE A
LIOU JJ
NARAYANAN R
SANCHEZ FJG
Citation: A. Ortizconde et al., DETERMINATION OF PHYSICAL-MECHANISMS CONTRIBUTING TO THE DIFFERENCE BETWEEN DRAIN AND SOURCE RESISTANCES IN SHORT-CHANNEL MOSFETS, Solid-state electronics, 39(2), 1996, pp. 211-215
EFFECTS OF HIGH-LEVEL FREE-CARRIER INJECTION ON THE BASE TRANSIT-TIMEOF BIPOLAR JUNCTION TRANSISTORS
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
SANCHEZ FG
Citation: Y. Yue et al., EFFECTS OF HIGH-LEVEL FREE-CARRIER INJECTION ON THE BASE TRANSIT-TIMEOF BIPOLAR JUNCTION TRANSISTORS, Solid-state electronics, 39(1), 1996, pp. 27-31
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
Citation: Y. Yue et al., RELATIVE ERRORS OF FREE-CARRIER DENSITY AT DIFFERENT TEMPERATURES CALCULATED FROM APPROXIMATIONS FOR THE FERMI-DIRAC INTEGRAL, JPN J A P 1, 34(5A), 1995, pp. 2286-2287
Authors:
LIOU JJ
ORTIZCONDE A
LIOU LL
HUANG CI
Citation: Jj. Liou et al., THERMAL-AVALANCHE INTERACTING BEHAVIOR OF ALGAAS GAAS MULTI-EMITTER FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(9), 1995, pp. 1645-1648
Authors:
NARAYANAN R
ORTIZCONDE A
LIOU JJ
SANCHEZ FJG
PARTHASARATHY A
Citation: R. Narayanan et al., 2-DIMENSIONAL NUMERICAL-ANALYSIS FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS, Solid-state electronics, 38(6), 1995, pp. 1155-1159
Authors:
ORTIZCONDE A
SANCHEZ FJG
LIOU JJ
ANDRIAN J
LAURENCE RJ
SCHMIDT PE
Citation: A. Ortizconde et al., A GENERALIZED-MODEL FOR A 2-TERMINAL DEVICE AND ITS APPLICATIONS TO PARAMETER EXTRACTION, Solid-state electronics, 38(1), 1995, pp. 265-266
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
Citation: Y. Yue et al., HIGH-LEVEL INJECTION IN QUASI-NEUTRAL REGION OF N P JUNCTION DEVICES - NUMERICAL RESULTS AND EMPIRICAL-MODEL/, Journal of applied physics, 77(4), 1995, pp. 1611-1615
Authors:
SANCHEZ FJG
ORTIZCONDE A
LIOU JJ
Citation: Fjg. Sanchez et al., CALCULATING DOUBLE-EXPONENTIAL DIODE MODEL PARAMETERS FROM PREVIOUSLYEXTRACTED SINGLE-EXPONENTIAL MODEL PARAMETERS, Electronics Letters, 31(1), 1995, pp. 71-72
Authors:
LIOU JJ
ORTIZCONDE A
Citation: Jj. Liou et A. Ortizconde, THE EFFECTS OF SPACE-CHARGE-LAYER THICKNESS MODULATION ON DIFFUSION CAPACITANCE, JPN J A P 1, 33(11), 1994, pp. 6148-6149
Authors:
SANCHEZ FJG
ORTIZCONDE A
NUNEZ MG
ANDERSON RL
Citation: Fjg. Sanchez et al., EXTRACTING THE SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 37(12), 1994, pp. 1943-1948
Authors:
ORTIZCONDE A
LIOU JJ
SANCHEZ MG
NUNEZ MG
ANDERSON RL
Citation: A. Ortizconde et al., SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH EXTRACTION OF N-CHANNEL MOSFET AT 77-K, Electronics Letters, 30(8), 1994, pp. 670-672
Authors:
ORTIZCONDE A
LIOU JJ
WONG W
SANCHEZ FJG
Citation: A. Ortizconde et al., SIMPLE METHOD FOR EXTRACTING THE DIFFERENCE BETWEEN THE DRAIN AND SOURCE SERIES RESISTANCES IN MOSFETS, Electronics Letters, 30(12), 1994, pp. 1013-1015
Risultati:
1-21
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