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Results: 1-25 |
Results: 25
SUBBAND STRUCTURE AND ANOMALOUS VALLEY SPLITTING IN ULTRA-THIN SILICON-ON-INSULATOR MOSFETS
Authors: OUISSE T MAUDE DK HORIGUCHI S ONO Y TAKAHASHI Y MURASE K CRISTOLOVEANU S
Citation: T. Ouisse et al., SUBBAND STRUCTURE AND ANOMALOUS VALLEY SPLITTING IN ULTRA-THIN SILICON-ON-INSULATOR MOSFETS, Physica. B, Condensed matter, 251, 1998, pp. 731-734
HIGH-FIELD AND HIGH-TEMPERATURE STRESS OF N-SIC MOS CAPACITORS
Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD AND HIGH-TEMPERATURE STRESS OF N-SIC MOS CAPACITORS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1489-1493
LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES
Authors: ANGHEL L OUISSE T BILLON T LASSAGNE P JAUSSAUD C
Citation: L. Anghel et al., LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1494-1496
HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528
ELECTRON-TRANSPORT AT THE SIC SIO2 INTERFACE
Authors: OUISSE T
Citation: T. Ouisse, ELECTRON-TRANSPORT AT THE SIC SIO2 INTERFACE, Physica status solidi. a, Applied research, 162(1), 1997, pp. 339-368
ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS
Authors: BANO E OUISSE T SCHARNHOLZ SP GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS, Electronics Letters, 33(3), 1997, pp. 243-245
OBSERVATION OF RANDOM TELEGRAPH SIGNAL IN SIC SCHOTTKY DIODES
Authors: OUISSE T PLATEL E BILLON T LAHRECHE H
Citation: T. Ouisse et al., OBSERVATION OF RANDOM TELEGRAPH SIGNAL IN SIC SCHOTTKY DIODES, Electronics Letters, 33(22), 1997, pp. 1907-1909
ELECTRON LOCALIZATION AND NOISE IN SILICON-CARBIDE INVERSION-LAYERS
Authors: OUISSE T
Citation: T. Ouisse, ELECTRON LOCALIZATION AND NOISE IN SILICON-CARBIDE INVERSION-LAYERS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 325-337
LOW-FREQUENCY NOISE CHARACTERIZATION OF N-MOSFET AND P-MOSFET WITH ULTRATHIN OXYNITRIDE GATE FILMS
Authors: MORFOULI P GHIBAUDO G OUISSE T VOGEL E HILL W MISRA V MCLARTY P WORTMAN JJ
Citation: P. Morfouli et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF N-MOSFET AND P-MOSFET WITH ULTRATHIN OXYNITRIDE GATE FILMS, IEEE electron device letters, 17(8), 1996, pp. 395-397
MOBILITY MODELING OF SOI MOSFETS IN THE HIGH-TEMPERATURE RANGE
Authors: REICHERT G OUISSE T PELLOIE JL CRISTOLOVEANU S
Citation: G. Reichert et al., MOBILITY MODELING OF SOI MOSFETS IN THE HIGH-TEMPERATURE RANGE, Solid-state electronics, 39(9), 1996, pp. 1347-1352
RELATIONSHIP BETWEEN EMPIRICAL AND THEORETICAL MOBILITY MODELS IN SILICON INVERSION-LAYERS
Authors: REICHERT G OUISSE T
Citation: G. Reichert et T. Ouisse, RELATIONSHIP BETWEEN EMPIRICAL AND THEORETICAL MOBILITY MODELS IN SILICON INVERSION-LAYERS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1394-1398
MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: VOGEL EM HILL WL MISRA V MCLARTY PK WORTMAN JJ HAUSER JR MORFOULI P GHIBAUDO G OUISSE T
Citation: Em. Vogel et al., MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 753-758
EXPERIMENTAL-EVIDENCE FOR THE EXISTENCE OF A MOBILITY EDGE IN SILICON-CARBIDE INVERSION-LAYERS
Authors: OUISSE T BILLON T
Citation: T. Ouisse et T. Billon, EXPERIMENTAL-EVIDENCE FOR THE EXISTENCE OF A MOBILITY EDGE IN SILICON-CARBIDE INVERSION-LAYERS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 71(3), 1995, pp. 413-426
ANALYSIS OF SIMOX METAL-OXIDE-SEMICONDUCTOR TRANSISTORS OPERATED IN THE HIGH-TEMPERATURE RANGE
Authors: OUISSE T REICHERT G CRISTOLOVEANU S FAYNOT O GIFFARD B
Citation: T. Ouisse et al., ANALYSIS OF SIMOX METAL-OXIDE-SEMICONDUCTOR TRANSISTORS OPERATED IN THE HIGH-TEMPERATURE RANGE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 21-23
UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE
Authors: KARMANN S DICIOCCIO L BLANCHARD B OUISSE T MUYARD D JAUSSAUD C
Citation: S. Karmann et al., UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 134-137
ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/
Authors: BILLON T BANO E DICIOCCIO L OUISSE T LASSAGNE P JAUSSAUD C
Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196
NOISE-ANALYSIS OF SILICON-CARBIDE JFETS
Authors: FLATRESSE P OUISSE T
Citation: P. Flatresse et T. Ouisse, NOISE-ANALYSIS OF SILICON-CARBIDE JFETS, Solid-state electronics, 38(5), 1995, pp. 971-975
ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: MCLARTY PK MISRA V HILL W WORTMAN JJ HAUSER JR MORFOULI P OUISSE T
Citation: Pk. Mclarty et al., ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(1), 1995, pp. 73-75
SELF-CONSISTENT QUANTUM-MECHANICAL CALCULATIONS IN ULTRATHIN SILICON-ON-INSULATOR STRUCTURES
Authors: OUISSE T
Citation: T. Ouisse, SELF-CONSISTENT QUANTUM-MECHANICAL CALCULATIONS IN ULTRATHIN SILICON-ON-INSULATOR STRUCTURES, Journal of applied physics, 76(10), 1994, pp. 5989-5995
OBSERVATION OF NONSTATIONARY TRANSPORT IN DEEP-SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH SHUBNIKOV-DEHAAS OSCILLATIONS
Authors: MIEVILLE JP OUISSE T CRISTOLOVEANU S FORRO L REVIL N DUTOIT M
Citation: Jp. Mieville et al., OBSERVATION OF NONSTATIONARY TRANSPORT IN DEEP-SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH SHUBNIKOV-DEHAAS OSCILLATIONS, Journal of applied physics, 75(8), 1994, pp. 4226-4232
SELF-CONSISTENT CALCULATIONS IN SILICON-CARBIDE INVERSION-LAYERS
Authors: OUISSE T
Citation: T. Ouisse, SELF-CONSISTENT CALCULATIONS IN SILICON-CARBIDE INVERSION-LAYERS, Journal of applied physics, 75(4), 1994, pp. 2092-2097
LOW-FREQUENCY, HIGH-TEMPERATURE CONDUCTANCE AND CAPACITANCE MEASUREMENTS ON METAL-OXIDE-SILICON CARBIDE CAPACITORS
Authors: OUISSE T BECOURT N JAUSSAUD C TEMPLIER F
Citation: T. Ouisse et al., LOW-FREQUENCY, HIGH-TEMPERATURE CONDUCTANCE AND CAPACITANCE MEASUREMENTS ON METAL-OXIDE-SILICON CARBIDE CAPACITORS, Journal of applied physics, 75(1), 1994, pp. 604-607
HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT
Authors: BILLON T OUISSE T LASSAGNE P JASSAUD C PONTHENIER JL BAUD L BECOURT N MORFOULI P
Citation: T. Billon et al., HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT, Electronics Letters, 30(2), 1994, pp. 170-171
SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES
Authors: BANO E OUISSE T DICIOCCIO L KARMANN S
Citation: E. Bano et al., SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES, Applied physics letters, 65(21), 1994, pp. 2723-2724
EXPERIMENTAL INVESTIGATION OF SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT HIGH MAGNETIC-FIELD AND LOW-TEMPERATURE
Authors: OUISSE T CRISTOLOVEANU S MAUDE DK
Citation: T. Ouisse et al., EXPERIMENTAL INVESTIGATION OF SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT HIGH MAGNETIC-FIELD AND LOW-TEMPERATURE, Journal of applied physics, 74(1), 1993, pp. 408-415
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