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Results: 1-9 |
Results: 9
TRANSFER OF 3 IN GAAS FILM ON SILICON SUBSTRATE BY PROTON IMPLANTATION PROCESS
Authors: JALAGUIER E ASPAR B POCAS S MICHAUD JF ZUSSY M PAPON AM BRUEL M
Citation: E. Jalaguier et al., TRANSFER OF 3 IN GAAS FILM ON SILICON SUBSTRATE BY PROTON IMPLANTATION PROCESS, Electronics Letters, 34(4), 1998, pp. 408-409
SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS
Authors: DICIOCCIO L LETERTRE F LETIEC Y PAPON AM JAUSSAUD C BRUEL M
Citation: L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 349-356
BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS
Authors: ASPAR B BRUEL M MORICEAU H MALEVILLE C POUMEYROL T PAPON AM CLAVERIE A BENASSAYAG G AUBERTONHERVE AJ BARGE T
Citation: B. Aspar et al., BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS, Microelectronic engineering, 36(1-4), 1997, pp. 233-240
ELIMINATION OF STRESS-INDUCED DEFECTS IN POLYBUFFERED LOCOS ISOLATIONSCHEME FOR SUB-0.25-MU-M DESIGNS
Authors: DELEONIBUS S MARTIN F HEITZMANN M GUIBERT JC PAPON AM
Citation: S. Deleonibus et al., ELIMINATION OF STRESS-INDUCED DEFECTS IN POLYBUFFERED LOCOS ISOLATIONSCHEME FOR SUB-0.25-MU-M DESIGNS, Journal of the Electrochemical Society, 144(6), 1997, pp. 164-166
BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES
Authors: ASPAR B GUILHALMENC C PUDDA C GARCIA A PAPON AM AUBERTONHERVE AJ LAMURE JM
Citation: B. Aspar et al., BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES, Microelectronic engineering, 28(1-4), 1995, pp. 411-414
OPTIMIZATION OF ULTRATHIN GATE OXIDE IN A SILO RTN ISOLATION PROCESS FOR ADVANCED ULSI - INTRODUCING A NEW CONCEPT OF SURFACE GETTERING/
Authors: DELEONIBUS S MARTIN F BLANCHARD B ERMOLIEFF A PAPON AM
Citation: S. Deleonibus et al., OPTIMIZATION OF ULTRATHIN GATE OXIDE IN A SILO RTN ISOLATION PROCESS FOR ADVANCED ULSI - INTRODUCING A NEW CONCEPT OF SURFACE GETTERING/, Journal of the Electrochemical Society, 141(10), 1994, pp. 2811-2820
INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON
Authors: BECOURT N PONTHENIER JL PAPON AM JAUSSAUD C
Citation: N. Becourt et al., INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON, Physica. B, Condensed matter, 185(1-4), 1993, pp. 79-84
CHARACTERIZATION OF THE BUFFER LAYER IN SIC HETEROEPITAXY
Authors: BECOURT N CROS B PONTHENIER JL BERJOAN R PAPON AM JAUSSAUD C
Citation: N. Becourt et al., CHARACTERIZATION OF THE BUFFER LAYER IN SIC HETEROEPITAXY, Applied surface science, 68(4), 1993, pp. 461-466
BURIED OXIDE LAYERS FORMED BY OXYGEN IMPLANTATION ON SCREENED OXIDE SILICON-WAFERS - STRUCTURAL-ANALYSIS
Authors: SAMITIER J MARTINEZ S PEREZRODRIGUEZ A GARRIDO B MORANTE JR PAPON AM MARGAIL J
Citation: J. Samitier et al., BURIED OXIDE LAYERS FORMED BY OXYGEN IMPLANTATION ON SCREENED OXIDE SILICON-WAFERS - STRUCTURAL-ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 838-841
Risultati: 1-9 |