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Results: 1-25 | 26-34 |
Results: 26-34/34
CONTACTLESS LOCAL DETERMINATION OF RECOMBINATION CENTER PARAMETERS INCD0.3HG0.7TE BY INFRARED-LASER INTERFEROMETRY
Authors: FEDORTSOV AB LETENKO DG POLYAKOV AY STAFEEV VI VOROBYEV LE
Citation: Ab. Fedortsov et al., CONTACTLESS LOCAL DETERMINATION OF RECOMBINATION CENTER PARAMETERS INCD0.3HG0.7TE BY INFRARED-LASER INTERFEROMETRY, Semiconductor science and technology, 9(1), 1994, pp. 69-76
THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG
Citation: Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150
PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION
Authors: POLYAKOV AY MILNES AG SMIRNOV NB KOZHUKHOVA EA DRUZHININA LV GOVORKOV AV DOLGINOV LM TUNITSKAYA IV
Citation: Ay. Polyakov et al., PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION, Solid-state electronics, 37(10), 1994, pp. 1691-1694
HYDROGEN PASSIVATION EFFECTS IN INGAALP AND INGAP
Authors: GORBYLEV VA CHELNIY AA POLYAKOV AY PEARTON SJ SMIRNOV NB WILSON RG MILNES AG CNEKALIN AA GOVORKOV AV LEIFEROV BM BORODINA OM
Citation: Va. Gorbylev et al., HYDROGEN PASSIVATION EFFECTS IN INGAALP AND INGAP, Journal of applied physics, 76(11), 1994, pp. 7390-7398
INDIUM ARSENIDE - A SEMICONDUCTOR FOR HIGH-SPEED AND ELECTROOPTICAL DEVICES
Authors: MILNES AG POLYAKOV AY
Citation: Ag. Milnes et Ay. Polyakov, INDIUM ARSENIDE - A SEMICONDUCTOR FOR HIGH-SPEED AND ELECTROOPTICAL DEVICES, Materials science & engineering. B, Solid-state materials for advanced technology, 18(3), 1993, pp. 237-259
DETERMINATION OF LOCAL DEEP-LEVELS HOMOGENEITY USING SEM
Authors: BRUK AS GOVORKOV AV MILVIDSKII MG POLYAKOV AY
Citation: As. Bruk et al., DETERMINATION OF LOCAL DEEP-LEVELS HOMOGENEITY USING SEM, Scanning, 15(6), 1993, pp. 345-349
GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES
Authors: MILNES AG POLYAKOV AY
Citation: Ag. Milnes et Ay. Polyakov, GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES, Solid-state electronics, 36(6), 1993, pp. 803-818
MECHANISMS OF FERMI-LEVEL PINNING IN SCHOTTKY BARRIERS ON INGAASSB AND ALGAASSB
Authors: POLYAKOV AY MILNES AG SMIRNOV NB DRUZHININA LV TUNITSKAYA IV
Citation: Ay. Polyakov et al., MECHANISMS OF FERMI-LEVEL PINNING IN SCHOTTKY BARRIERS ON INGAASSB AND ALGAASSB, Solid-state electronics, 36(10), 1993, pp. 1371-1373
ELECTRICAL-PROPERTIES OF MBE GROWN LAYERS OF ALGAASSB AND THE EFFECTSOF PROTON IMPLANTATION AND HYDROGEN PLASMA TREATMENT
Authors: POLYAKOV AY EGLASH SJ MILNES AG YE M PEARTON SJ WILSON RG
Citation: Ay. Polyakov et al., ELECTRICAL-PROPERTIES OF MBE GROWN LAYERS OF ALGAASSB AND THE EFFECTSOF PROTON IMPLANTATION AND HYDROGEN PLASMA TREATMENT, Journal of crystal growth, 127(1-4), 1993, pp. 728-731
Risultati: 1-25 | 26-34 |