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Results:
1-25
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Results: 25
Authors:
PROST W
KRUIS FE
OTTEN F
NIELSCH K
RELLINGHAUS B
AUER U
PELED A
WASSERMANN EF
FISSAN H
TEGUDE FJ
Citation: W. Prost et al., MONODISPERSE AEROSOL-PARTICLE DEPOSITION - PROSPECTS FOR NANOELECTRONICS, Microelectronic engineering, 42, 1998, pp. 535-538
Authors:
HAASE M
PROST W
VELLING P
LIU Q
TEGUDE FJ
Citation: M. Haase et al., HR XRD FOR THE ANALYSIS OF ULTRATHIN CENTROSYMMETRIC STRAINED DB-RTD HETEROSTRUCTURES, Thin solid films, 319(1-2), 1998, pp. 25-28
Authors:
AUER U
KIM SO
AGETHEN M
VELLING P
PROST W
TEGUDE FJ
Citation: U. Auer et al., FAST FABRICATION OF INP-BASED HBT USING A NOVEL COPLANAR DESIGN, Electronics Letters, 34(19), 1998, pp. 1885-1886
Authors:
LAKNER H
MENDORF C
BOLLIG B
PROST W
TEGUDE FJ
Citation: H. Lakner et al., DETERMINATION OF INTERFACE COMPOSITION IN III-V HETEROJUNCTION DEVICES (HT AND RTD) WITH ATOMIC-RESOLUTION USING STEM TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 52-56
Authors:
BRENNEMANN A
PROST W
LIU Q
AUER U
TEGUDE FJ
Citation: A. Brennemann et al., MODELING INTERMIXING OF SHORT-PERIOD STRAINED-LAYER SUPERLATTICES BY MEANS OF X-RAY-DIFFRACTION ANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 87-90
Authors:
LIU Q
PROST W
TEGUDE FJ
Citation: Q. Liu et al., INVESTIGATION OF GROWTH TEMPERATURE-DEPENDENT GAINP ORDERING IN DIFFERENT CRYSTAL PLANES USING X-RAY-DIFFRACTION AND PHOTOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 91-95
Authors:
LIU Q
PROST W
BRENNEMANN A
AUER U
TEGUDE FJ
Citation: Q. Liu et al., MODELING IMPERFECTIONS OF EPITAXIAL HETEROSTRUCTURES BY MEANS OF X-RAY-DIFFRACTION ANALYSIS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 299-304
Authors:
LINDNER A
VELLING P
PROST W
WIERSCH A
KUPHAL E
BURCHARD A
MAGERLE R
DEICHER M
TEGUDE FJ
Citation: A. Lindner et al., THE ROLE OF HYDROGEN IN LOW-TEMPERATURE MOVPE GROWTH AND CARBON DOPING OF IN0.53GA0.47AS FOR INP-BASED HBT, Journal of crystal growth, 170(1-4), 1997, pp. 287-291
Authors:
AUER U
PROST W
JANSSEN G
AGETHEN M
REUTER R
TEGUDE FJ
Citation: U. Auer et al., A NOVEL 3-D INTEGRATED HFET RTD FREQUENCY-MULTIPLIER/, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 650-654
Authors:
AUER U
REUTER R
ELLRODT P
HEEDT C
PROST W
TEGUDE FJ
Citation: U. Auer et al., THE IMPACT OF PSEUDOMORPHIC AIA SPACER LAYERS ON THE GATE LEAKAGE CURRENT OF INALAS INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Microwave and optical technology letters, 11(3), 1996, pp. 125-128
Authors:
LIU Q
BRENNEMANN A
HARDTDEGEN H
LINDNER A
PROST W
TEGUDE FJ
Citation: Q. Liu et al., CHARACTERIZATION OF HYDROGEN PASSIVATION AND CARBON SELF-COMPENSATIONOF HIGHLY C-DOPED GAAS BY MEANS OF X-RAY-DIFFRACTION, Journal of applied physics, 79(2), 1996, pp. 710-716
Authors:
LIU Q
DERKSEN S
PROST W
LINDNER A
TEGUDE FJ
Citation: Q. Liu et al., GROWTH TEMPERATURE-DEPENDENT BAND ALIGNMENT AT THE GA0.51IN0.49P TO GAAS HETEROINTERFACES, Journal of applied physics, 79(1), 1996, pp. 305-309
Authors:
WIERSCH A
HEEDT C
SCHNEIDERS S
TILDERS R
BUCHALI F
KUEBART W
PROST W
TEGUDE FJ
Citation: A. Wiersch et al., ROOM-TEMPERATURE DEPOSITION OF SINX USING ECR-PECVD FOR III V SEMICONDUCTOR MICROELECTRONICS IN LIFT-OFF TECHNIQUE/, Journal of non-crystalline solids, 187, 1995, pp. 334-339
Authors:
AUER U
REUTER R
HEEDT C
PROST W
TEGUDE FJ
Citation: U. Auer et al., INP-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH HIGH-QUALITY SHORT-PERIOD (INAS)(3M) (GAAS)(1M) SUPERLATTICE CHANNEL LAYERS/, Journal of crystal growth, 150(1-4), 1995, pp. 1225-1229
Authors:
PROST W
SCHEFFER F
LIU Q
LINDNER A
LAKNER H
GYURO I
TEGUDE FJ
Citation: W. Prost et al., METALORGANIC VAPOR-PHASE EPITAXIAL GROWN HETEROINTERFACES TO GAINP WITH GROUP-III AND GROUP-V EXCHANGE, Journal of crystal growth, 146(1-4), 1995, pp. 538-543
Authors:
LIU Q
DERKSEN S
LINDER A
SCHEFFER F
PROST W
TEGUDE FJ
Citation: Q. Liu et al., EVIDENCE OF TYPE-II BAND ALIGNMENT AT THE ORDERED GAINP TO GAAS HETEROINTERFACE, Journal of applied physics, 77(3), 1995, pp. 1154-1158
Authors:
LIU Q
PROST W
TEGUDE FJ
Citation: Q. Liu et al., DETERMINATION OF CUPT-TYPE ORDERING IN GAINP BY MEANS OF X-RAY-DIFFRACTION IN THE SKEW, SYMMETRICAL ARRANGEMENT, Applied physics letters, 67(19), 1995, pp. 2807-2809
Authors:
LIU Q
SCHEFFER F
LINDNER A
LAKNER H
PROST W
TEGUDE FJ
Citation: Q. Liu et al., X-RAY CHARACTERIZATION OF VERY THIN GAXIN1-XP (X-APPROXIMATE-TO-0.5) LAYERS GROWN ON INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 188-192
Authors:
SCHEFFER F
LINDNER A
LIU Q
HEEDT C
REUTER R
PROST W
LAKNER H
TEGUDE FJ
Citation: F. Scheffer et al., HIGHLY STRAINED IN0.5GA0.5P AS WIDE-GAP MATERIAL ON INP SUBSTRATE FORHETEROJUNCTION FIELD-EFFECT TRANSISTOR APPLICATION, Journal of crystal growth, 145(1-4), 1994, pp. 326-331
Authors:
LINDNER A
LIU Q
SCHEFFER F
HAASE M
PROST W
TEGUDE FJ
Citation: A. Lindner et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INAS GAAS SHORT-PERIOD SUPERLATTICES ON INP SUBSTRATES/, Journal of crystal growth, 145(1-4), 1994, pp. 771-777
Authors:
LIU Q
LINDNER A
SCHEFFER F
PROST W
TEGUDE FJ
Citation: Q. Liu et al., X-RAY-DIFFRACTION CHARACTERIZATION OF HIGHLY STRAINED INAS AND GAAS-LAYERS ON INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 75(5), 1994, pp. 2426-2433
Authors:
HEEDT C
BUCHALI F
PROST W
BROCKERHOFF W
FRITZSCHE D
NICKEL H
LOSCH R
SCHLAPP W
TEGUDE FJ
Citation: C. Heedt et al., DRASTIC REDUCTION OF GATE LEAKAGE IN INALAS INGAAS HEMTS USING A PSEUDOMORPHIC INALAS HOLE BARRIER LAYER/, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1685-1690
Authors:
SCHEFFER F
HEEDT C
REUTER R
LINDNER A
LIU Q
PROST W
TEGUDE FJ
Citation: F. Scheffer et al., HIGH BREAKDOWN VOLTAGE INGAAS INALAS HFET USING IN0.5GA0.5P SPACER LAYER/, Electronics Letters, 30(2), 1994, pp. 169-170
Authors:
LIU Q
QUEDEWEIT U
SCHEFFER F
LINDNER A
PROST W
TEGUDE FJ
Citation: Q. Liu et al., EFFECTS OF DEEP LEVELS AND SI-DOPING ON GAINP MATERIAL PROPERTIES INVESTIGATED BY MEANS OF OPTICAL METHODS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 181-184
Authors:
KRAUS J
MESCHEDE H
LIU Q
PROST W
TEGUDE FJ
LAKNER H
KUBALEK E
Citation: J. Kraus et al., INYGA1-YAS GAAS INTERFACE SMOOTHING BY GAAS MONOLAYERS IN HIGHLY STRAINED GRADED SUPERLATTICE CHANNELS LESS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-0.4) FOR PSEUDOMORPHIC ALXGA1-XAS/INYGA1-YAS HFET/, Journal of crystal growth, 127(1-4), 1993, pp. 589-591
Risultati:
1-25
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