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Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/201
Wet chemical etching of LiGaO2 and LiAlO2
Authors: Hsu, CH Ip, KP Johnson, JW Chu, SNG Kryliouk, O Pearton, SJ Li, L Chai, BHT Anderson, TJ Ren, F
Citation: Ch. Hsu et al., Wet chemical etching of LiGaO2 and LiAlO2, EL SOLID ST, 4(6), 2001, pp. C35-C38
GaN bipolar junction transistors with regrown emitters
Authors: Zhang, AP Han, J Ren, F Waldrip, KE Abernathy, CR Luo, B Dang, G Johnson, JW Lee, KP Pearton, SJ
Citation: Ap. Zhang et al., GaN bipolar junction transistors with regrown emitters, EL SOLID ST, 4(5), 2001, pp. G39-G41
Device series resistance calculations for vertical cavity surface-emittinglasers
Authors: Dang, G Luo, B Ren, F Hobson, WS Lopata, J Chu, SNG Pearton, SJ
Citation: G. Dang et al., Device series resistance calculations for vertical cavity surface-emittinglasers, EL SOLID ST, 4(12), 2001, pp. G112-G114
Magnetic properties of Fe- and Mn-implanted SiC
Authors: Theodoropoulou, N Hebard, AF Chu, SNG Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM
Citation: N. Theodoropoulou et al., Magnetic properties of Fe- and Mn-implanted SiC, EL SOLID ST, 4(12), 2001, pp. G119-G121
Level set approach to simulation of feature profile evolution in a high-density plasma-etching system
Authors: Im, YH Hahn, YB Pearton, SJ
Citation: Yh. Im et al., Level set approach to simulation of feature profile evolution in a high-density plasma-etching system, J VAC SCI B, 19(3), 2001, pp. 701-710
High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers
Authors: Dang, G Hobson, WS Chirovsky, LMF Lopata, J Tayahi, M Chu, SNG Ren, F Pearton, SJ
Citation: G. Dang et al., High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers, IEEE PHOTON, 13(9), 2001, pp. 924-926
Ion implantation into GaN
Authors: Kucheyev, SO Williams, JS Pearton, SJ
Citation: So. Kucheyev et al., Ion implantation into GaN, MAT SCI E R, 33(2-3), 2001, pp. 51-107
GaN electronics for high power, high temperature applications
Authors: Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation: Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
Effect of carbon doping on GaN : Er
Authors: Overberg, M Abernathy, CR MacKenzie, JD Pearton, SJ Wilson, RG Zavada, JM
Citation: M. Overberg et al., Effect of carbon doping on GaN : Er, MAT SCI E B, 81(1-3), 2001, pp. 121-126
Characterization and annealing of Eu-doped GaN
Authors: Overberg, M Lee, KN Abernathy, CR Pearton, SJ Hobson, WS Wilson, RG Zavada, JM
Citation: M. Overberg et al., Characterization and annealing of Eu-doped GaN, MAT SCI E B, 81(1-3), 2001, pp. 150-152
Dry etching mechanism of copper and magnetic materials with UV illumination
Authors: Hahn, YB Pearton, SJ Cho, H Lee, KP
Citation: Yb. Hahn et al., Dry etching mechanism of copper and magnetic materials with UV illumination, MAT SCI E B, 79(1), 2001, pp. 20-26
Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
Authors: Chang, PC Li, NY Baca, AG Hou, HQ Monier, C Laroche, JR Ren, F Pearton, SJ
Citation: Pc. Chang et al., Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor, IEEE ELEC D, 22(3), 2001, pp. 113-115
Process development for small-area GaN/AlGaN heterojunction bipolar transistors
Authors: Lee, KP Zhang, AP Dang, G Ren, F Hobson, WS Lopata, J Abenathy, CR Pearton, SJ Lee, JW
Citation: Kp. Lee et al., Process development for small-area GaN/AlGaN heterojunction bipolar transistors, J VAC SCI A, 19(4), 2001, pp. 1846-1849
High density plasma via hole etching in SiC
Authors: Cho, H Lee, KP Leerungnawarat, P Chu, SNG Ren, F Pearton, SJ Zetterling, CM
Citation: H. Cho et al., High density plasma via hole etching in SiC, J VAC SCI A, 19(4), 2001, pp. 1878-1881
Magnetic properties of Mn and Fe-implanted p-GaN
Authors: Theodoropoulou, N Overberg, ME Chu, SNG Hebard, AF Abernathy, CR Wilson, RG Zavada, JM Lee, KP Pearton, SJ
Citation: N. Theodoropoulou et al., Magnetic properties of Mn and Fe-implanted p-GaN, PHYS ST S-B, 228(1), 2001, pp. 337-340
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chou, CC Lee, CM
Citation: Ay. Polyakov et al., Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures, J ELEC MAT, 30(3), 2001, pp. 147-155
Comparison of F-2 plasma chemistries for deep etching of SiC
Authors: Leerungnawarat, P Lee, KP Pearton, SJ Ren, F Chu, SNG
Citation: P. Leerungnawarat et al., Comparison of F-2 plasma chemistries for deep etching of SiC, J ELEC MAT, 30(3), 2001, pp. 202-206
Comparison of plasma etch chemistries for MgO
Authors: Baik, KH Park, PY Gila, BP Shin, JH Abernathy, CR Norasetthekul, S Luo, B Ren, F Lambers, ES Pearton, SJ
Citation: Kh. Baik et al., Comparison of plasma etch chemistries for MgO, APPL SURF S, 183(1-2), 2001, pp. 26-32
Comparison of the effects of H-2 and D-2 plasma exposure on AlGaAs/GaAs high electron mobility transistors
Authors: Luo, B Ren, F Lee, KP Pearton, SJ Wu, CS Kopf, RF Johnson, D Sasserah, JN
Citation: B. Luo et al., Comparison of the effects of H-2 and D-2 plasma exposure on AlGaAs/GaAs high electron mobility transistors, SOL ST ELEC, 45(9), 2001, pp. 1613-1624
Comparison of the effects of H-2 and D-2 plasma exposure on GaAs MESFETs
Authors: Luo, B Ren, F Lee, KP Pearton, SJ Wu, CS Johnson, D Sasserath, JN
Citation: B. Luo et al., Comparison of the effects of H-2 and D-2 plasma exposure on GaAs MESFETs, SOL ST ELEC, 45(9), 2001, pp. 1625-1638
Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs
Authors: Hobson, WS Lopata, J Chirovsky, LMF Chu, SNG Dang, G Lou, B Ren, F Tayahi, M Kilper, DC Pearton, SJ
Citation: Ws. Hobson et al., Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs, SOL ST ELEC, 45(9), 2001, pp. 1639-1644
Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs
Authors: Lee, JW Jeon, MH Devre, M Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F Shul, RJ
Citation: Jw. Lee et al., Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs, SOL ST ELEC, 45(9), 2001, pp. 1683-1686
Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures
Authors: Luo, B Johnson, JW Schoenfeld, D Pearton, SJ Ren, F
Citation: B. Luo et al., Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures, SOL ST ELEC, 45(7), 2001, pp. 1149-1152
Schottky rectifiers fabricated on free-standing GaN substrates
Authors: Johnson, JW LaRoch, JR Ren, F Gila, BP Overberg, ME Abernathy, CR Chyi, JI Chou, CC Nee, TE Lee, CM Lee, KP Park, SS Park, YJ Pearton, SJ
Citation: Jw. Johnson et al., Schottky rectifiers fabricated on free-standing GaN substrates, SOL ST ELEC, 45(3), 2001, pp. 405-410
Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN
Authors: Kent, DG Lee, KP Zhang, AP Luo, B Overberg, ME Abernathy, CR Ren, F Mackenzie, KD Pearton, SJ Nakagawa, Y
Citation: Dg. Kent et al., Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN, SOL ST ELEC, 45(3), 2001, pp. 467-470
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