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Results:
1-12
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Results: 12
Authors:
Pelloie, JL
Auberton-Herve, A
Citation: Jl. Pelloie et A. Auberton-herve, A new generation of IC processing: Low-power, high-performance SOICMOS, SOL ST TECH, 44(11), 2001, pp. 63
Authors:
Faynot, O
Poiroux, T
Pelloie, JL
Citation: O. Faynot et al., Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI, SOL ST ELEC, 45(4), 2001, pp. 599-605
Authors:
Benson, J
D'Halleweyn, NV
Redman-White, W
Easson, CA
Uren, MJ
Faynot, O
Pelloie, JL
Citation: J. Benson et al., A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling, IEEE DEVICE, 48(5), 2001, pp. 1019-1021
Authors:
Haendler, S
Jomaah, J
Balestra, F
Pelloie, JL
Raynaud, C
Citation: S. Haendler et al., Kink-related excess noise in deep submicron partially and moderately fullydepleted unibond N-metal oxide semiconductor field effect transistor (MOSFET), JPN J A P 1, 39(4B), 2000, pp. 2261-2263
Authors:
Bracale, A
Ferlet-Cavrois, V
Fel, N
Pasquet, D
Gautier, JL
Pelloie, JL
De Poncharra, JD
Citation: A. Bracale et al., A new approach for SOI devices small-signal parameters extraction, ANALOG IN C, 25(2), 2000, pp. 157-169
Authors:
Ferlet-Cavrois, V
Colladant, T
Paillet, P
Leray, JL
Musseau, O
Schwank, JR
Shaneyfelt, MR
Pelloie, JL
de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188
Authors:
Musseau, O
Ferlet-Cavrois, V
Pelloie, JL
Buchner, S
McMorrow, D
Campbell, AB
Citation: O. Musseau et al., Laser probing of bipolar amplification in 0.25-mu m MOS/SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2196-2203
Authors:
Ferlet-Cavrois, V
Paillet, P
Musseau, O
Leray, JL
Faynot, O
Raynaud, C
Pelloie, JL
Citation: V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
Authors:
Pelloie, JL
Raynaud, C
Faynot, O
Grouillet, A
de Pontcharra, JD
Citation: Jl. Pelloie et al., CMOS/SOI technologies for low-power and low-voltage circuits, MICROEL ENG, 48(1-4), 1999, pp. 327-334
Authors:
Ferlet-Cavrois, V
Bracale, A
Marcandella, C
Musseau, O
Pelloie, JL
Raynaud, C
Faynot, O
Citation: V. Ferlet-cavrois et al., Designing MOS/SOI transistors for high frequency and low voltage applications, MICROEL ENG, 48(1-4), 1999, pp. 351-354
Authors:
Dentan, M
Abbon, P
Borgeaud, P
Delagnes, E
Fourches, N
Lachartre, D
Lugiez, F
Paul, B
Rouger, M
Truche, R
Blanc, JP
Faynot, O
Leroux, C
Delevoye-Orsier, E
Pelloie, JL
de Pontcharra, J
Flament, O
Guebhard, JM
Leray, JL
Montaron, J
Musseau, O
Vitez, A
Le Mouellic, C
Corbiere, T
Dantec, A
Festes, G
Martinez, J
Rodde, K
Citation: M. Dentan et al., Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology., IEEE NUCL S, 46(4), 1999, pp. 822-828
Authors:
Ferlet-Cavrois, V
Quoizola, S
Musseau, O
Flament, O
Leray, JL
Pelloie, JL
Raynaud, C
Faynot, O
Citation: V. Ferlet-cavrois et al., Total dose induced latch in short channel NMOS/SOI transistors, IEEE NUCL S, 45(6), 1998, pp. 2458-2466
Risultati:
1-12
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