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Results: 1-25 | 26-50 | 51-67
Results: 1-25/67
ULTRAHIGH DEPTH RESOLUTION SECONDARY-ION MASS-SPECTROMETRY WITH SUB-KEV GRAZING O-2(+) BEAMS
Authors: ALKEMADE PFA JIANG ZX VISSER CCG RADELAAR S ARNOLDBIK WM
Citation: Pfa. Alkemade et al., ULTRAHIGH DEPTH RESOLUTION SECONDARY-ION MASS-SPECTROMETRY WITH SUB-KEV GRAZING O-2(+) BEAMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 373-376
GROWTH AND CHARACTERIZATION OF ORGANIC MULTILAYERS ON GOLD GROWN BY ORGANIC MOLECULAR-BEAM DEPOSITION
Authors: ROSINK JJWM BLAUW MA GEERLIGS LJ VANDERDRIFT E ROUSSEEUW BAC RADELAAR S
Citation: Jjwm. Rosink et al., GROWTH AND CHARACTERIZATION OF ORGANIC MULTILAYERS ON GOLD GROWN BY ORGANIC MOLECULAR-BEAM DEPOSITION, Optical materials, 9(1-4), 1998, pp. 416-422
OBSERVATION OF STRAIN-RELAXATION-INDUCED SIZE EFFECTS IN P-TYPE SI SIGE RESONANT-TUNNELING DIODES/
Authors: LUKEY PW CARO J ZIJLSTRA T VANDERDRIFT E RADELAAR S
Citation: Pw. Lukey et al., OBSERVATION OF STRAIN-RELAXATION-INDUCED SIZE EFFECTS IN P-TYPE SI SIGE RESONANT-TUNNELING DIODES/, Physical review. B, Condensed matter, 57(12), 1998, pp. 7132-7140
1 F NOISE IN MONOCRYSTALLINE AND POLYCRYSTALLINE ALUMINUM/
Authors: VANDENHOMBERG MJC VERBRUGGEN AH ALKEMADE PFA RADELAAR S OCHS E ARMBRUSTERDAGGE K SEEGER A STOLL H
Citation: Mjc. Vandenhomberg et al., 1 F NOISE IN MONOCRYSTALLINE AND POLYCRYSTALLINE ALUMINUM/, Physical review. B, Condensed matter, 57(1), 1998, pp. 53-55
TIN REACTIVE SPUTTER-DEPOSITION STUDIED AS A FUNCTION OF THE PUMPING SPEED
Authors: HEUVELMAN WM HELDERMAN P JANSSEN GCAM RADELAAR S
Citation: Wm. Heuvelman et al., TIN REACTIVE SPUTTER-DEPOSITION STUDIED AS A FUNCTION OF THE PUMPING SPEED, Thin solid films, 332(1-2), 1998, pp. 335-339
SIOF AND SIO2 DEPOSITION IN A HDP REACTOR - TOOL CHARACTERIZATION ANDFILM ANALYSIS
Authors: DENBOER DJ FUKUDA H HELMIG J VANDERHILST JBC JANSSEN GCAM KALKMAN AJ RADELAAR S
Citation: Dj. Denboer et al., SIOF AND SIO2 DEPOSITION IN A HDP REACTOR - TOOL CHARACTERIZATION ANDFILM ANALYSIS, Microelectronics and reliability, 38(2), 1998, pp. 281-286
METALLIC POINT CONTACTS FORMED BY PHYSICAL VAPOR-DEPOSITION AND CHEMICAL-VAPOR-DEPOSITION - MICROSCOPY STUDY AND POINT-CONTACT SPECTROSCOPY
Authors: GRIBOV NN CARO J OOSTERLAKEN TGM RADELAAR S
Citation: Nn. Gribov et al., METALLIC POINT CONTACTS FORMED BY PHYSICAL VAPOR-DEPOSITION AND CHEMICAL-VAPOR-DEPOSITION - MICROSCOPY STUDY AND POINT-CONTACT SPECTROSCOPY, Low temperature physics, 23(7), 1997, pp. 554-560
SIOFX AND SIO2 DEPOSITION IN AN ECR-HDP REACTOR - TOOL CHARACTERIZATION AND FILM ANALYSIS
Authors: KALKMAN AJ DENBOER DJ FUKUDA H VANDERHILST JBC JANSSEN GCAM RADELAAR S
Citation: Aj. Kalkman et al., SIOFX AND SIO2 DEPOSITION IN AN ECR-HDP REACTOR - TOOL CHARACTERIZATION AND FILM ANALYSIS, Microelectronic engineering, 37-8(1-4), 1997, pp. 271-276
HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER
Authors: JONGSTE JF LI X LOKKER JP JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER, Microelectronic engineering, 37-8(1-4), 1997, pp. 319-327
REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER
Authors: SABOURET E SCHAFFNIT C JONGSTE JF JANSSEN GCAM RADELAAR S
Citation: E. Sabouret et al., REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER, Microelectronic engineering, 37-8(1-4), 1997, pp. 353-363
CHEMICAL VS PHYSICAL FACTORS IN DRY-ETCHING INDUCED DAMAGE IN THE SI GEXSI1-X SYSTEM/
Authors: VANVEEN RG TEEPEN MJ VANDERDRIFT E ZIJLSTRA T FAKKELDIJ EJM WERNER K VERBRUGGEN AH RADELAAR S
Citation: Rg. Vanveen et al., CHEMICAL VS PHYSICAL FACTORS IN DRY-ETCHING INDUCED DAMAGE IN THE SI GEXSI1-X SYSTEM/, Microelectronic engineering, 35(1-4), 1997, pp. 55-58
FABRICATION OF SUBMICRON SINGLE-CRYSTALLINE AND BAMBOO AL LINES BY RECRYSTALLIZATION
Authors: VANDENHOMBERG MJC ALKEMADE PFA VERBRUGGEN AH DIRKS AG HURD JL RADELAAR S
Citation: Mjc. Vandenhomberg et al., FABRICATION OF SUBMICRON SINGLE-CRYSTALLINE AND BAMBOO AL LINES BY RECRYSTALLIZATION, Microelectronic engineering, 35(1-4), 1997, pp. 277-280
A NEW FABRICATION PROCESS FOR METALLIC POINT CONTACTS
Authors: GRIBOV NN THEEUWEN SJCH CARO J RADELAAR S
Citation: Nn. Gribov et al., A NEW FABRICATION PROCESS FOR METALLIC POINT CONTACTS, Microelectronic engineering, 35(1-4), 1997, pp. 317-320
PREPARATION OF NANOMETER-SCALE WINDOWS IN SIO2 FOR SELECTIVE EPITAXIAL-GROWTH OF SI BASED DEVICES
Authors: MAES JWH LUKEY PW ZIJLSTRA T VISSER C CARO J VANDERDRIFT EWJM TICHELAAR FD RADELAAR S
Citation: Jwh. Maes et al., PREPARATION OF NANOMETER-SCALE WINDOWS IN SIO2 FOR SELECTIVE EPITAXIAL-GROWTH OF SI BASED DEVICES, Microelectronic engineering, 35(1-4), 1997, pp. 321-324
MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS
Authors: JONGSTE JF LOKKER JP JANSSEN GCAM RADELAAR S TORRES J PALLEAU J
Citation: Jf. Jongste et al., MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS, Microelectronic engineering, 33(1-4), 1997, pp. 39-46
MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS
Authors: LOKKER JP KALKMAN AJ SCHELLEVIS H JANSSEN GCAM RADELAAR S
Citation: Jp. Lokker et al., MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS, Microelectronic engineering, 33(1-4), 1997, pp. 129-135
HIGH DEPTH RESOLUTION SIMS ANALYSIS WITH LOW-ENERGY GRAZING O-2(+) BEAMS
Authors: JIANG ZX ALKEMADE PFA ALGRA E RADELAAR S
Citation: Zx. Jiang et al., HIGH DEPTH RESOLUTION SIMS ANALYSIS WITH LOW-ENERGY GRAZING O-2(+) BEAMS, Surface and interface analysis, 25(4), 1997, pp. 285-291
CHARACTERIZATION OF AN N-TYPE SI SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR/
Authors: KUZNETSOV VI WERNER K RADELAAR S METSELAAR JW
Citation: Vi. Kuznetsov et al., CHARACTERIZATION OF AN N-TYPE SI SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR/, Thin solid films, 294(1-2), 1997, pp. 263-266
NOVEL POSTETCHING TREATMENT OF SMALL WINDOWS IN OXIDE FOR SELECTIVE EPITAXIAL-GROWTH
Authors: MAES JWH CARO J VISSER CCG ZIJLSTRA T VANDERDRIFT EWJM RADELAAR S TICHELAAR FD FAKKELDIJ EJM
Citation: Jwh. Maes et al., NOVEL POSTETCHING TREATMENT OF SMALL WINDOWS IN OXIDE FOR SELECTIVE EPITAXIAL-GROWTH, Applied physics letters, 70(8), 1997, pp. 973-975
CURVED CRYSTAL-LATTICE IN RESOLIDIFIED SUBMICRON AL LINES
Authors: VANDENHOMBERG MJC ALKEMADE PFA RADELAAR S HURD JL DIRKS AG
Citation: Mjc. Vandenhomberg et al., CURVED CRYSTAL-LATTICE IN RESOLIDIFIED SUBMICRON AL LINES, Applied physics letters, 70(3), 1997, pp. 318-320
FORMATION OF LITHOGRAPHIC METALLIC HETERO-CONTACTS
Authors: GRIBOV NN CARO J RADELAAR S
Citation: Nn. Gribov et al., FORMATION OF LITHOGRAPHIC METALLIC HETERO-CONTACTS, Physica. B, Condensed matter, 218(1-4), 1996, pp. 97-100
PROPERTIES OF TUNGSTEN POINT CONTACTS FORMED WITH CHEMICAL-VAPOR-DEPOSITION
Authors: GRIBOV NN CARO J OOSTERLAKEN TGM RADELAAR S
Citation: Nn. Gribov et al., PROPERTIES OF TUNGSTEN POINT CONTACTS FORMED WITH CHEMICAL-VAPOR-DEPOSITION, Physica. B, Condensed matter, 218(1-4), 1996, pp. 101-104
NONOHMIC HOPPING CONDUCTION IN NANOFABRICATCD SI POINT CONTACTS
Authors: MAES JWH HEUVELMAN W KOZUB VI CARO J RADELAAR S
Citation: Jwh. Maes et al., NONOHMIC HOPPING CONDUCTION IN NANOFABRICATCD SI POINT CONTACTS, Physica. B, Condensed matter, 218(1-4), 1996, pp. 105-108
HIGH-ELECTRIC-FIELD TRANSPORT IN BISMUTH NANOCONSTRICTIONS
Authors: VANDERHILST JBC VANHULST JA GRIBOV NN CARO J RADELAAR S
Citation: Jbc. Vanderhilst et al., HIGH-ELECTRIC-FIELD TRANSPORT IN BISMUTH NANOCONSTRICTIONS, Physica. B, Condensed matter, 218(1-4), 1996, pp. 109-112
THE ROLE OF BASIC AND LONG-TERM RESEARCH IN THE JESSI PROGRAM - INTRODUCTION
Authors: RADELAAR S
Citation: S. Radelaar, THE ROLE OF BASIC AND LONG-TERM RESEARCH IN THE JESSI PROGRAM - INTRODUCTION, Microelectronic engineering, 34(1), 1996, pp. 5-6
Risultati: 1-25 | 26-50 | 51-67