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Results: 1-25 | 26-27
Results: 1-25/27
THE DESIGN AND FABRICATION OF 0.35 MU-M SINGLE-POLYSILICON SELF-ALIGNED BIPOLAR-TRANSISTORS
Authors: CHANTRE A GRAVIER T NIEL S KIRTSCH J GRANIER A GROUILLET A GUILLERMET A MAURY D PANTEL R REGOLINI JL VINCENT G
Citation: A. Chantre et al., THE DESIGN AND FABRICATION OF 0.35 MU-M SINGLE-POLYSILICON SELF-ALIGNED BIPOLAR-TRANSISTORS, JPN J A P 1, 37(4A), 1998, pp. 1781-1786
SUPPRESSION OF THE BASE-COLLECTOR LEAKAGE CURRENT IN INTEGRATED SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: ASSOUS M DEBERRANGER E REGOLINI JL MOUIS M HERNANDEZ C
Citation: M. Assous et al., SUPPRESSION OF THE BASE-COLLECTOR LEAKAGE CURRENT IN INTEGRATED SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1740-1744
OPTICAL CHARACTERIZATION BY SPECTROSCOPIC ELLIPSOMETRY OF POLYCRYSTALLINE SI1-XGEX OF VARIABLE GE COMPOSITION UP TO 100-PERCENT GE
Authors: FERRIEU F MORIN C REGOLINI JL
Citation: F. Ferrieu et al., OPTICAL CHARACTERIZATION BY SPECTROSCOPIC ELLIPSOMETRY OF POLYCRYSTALLINE SI1-XGEX OF VARIABLE GE COMPOSITION UP TO 100-PERCENT GE, Thin solid films, 315(1-2), 1998, pp. 316-321
PHOTOFIELD INTERFACE IMPURITY SPECTROSCOPY IN BLOCKED IMPURITY BAND SI-B STRUCTURES
Authors: PASQUIER S MENY C ASADAUSKAS L LEOTIN J ARONZON BA RYLKOV VV CONEDERA V FABRE N REGOLINI JL MORIN C
Citation: S. Pasquier et al., PHOTOFIELD INTERFACE IMPURITY SPECTROSCOPY IN BLOCKED IMPURITY BAND SI-B STRUCTURES, Journal of applied physics, 83(8), 1998, pp. 4222-4229
SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE
Authors: BODNAR S DEBERRANGER E BOUILLON P MOUIS M SKOTNICKI T REGOLINI JL
Citation: S. Bodnar et al., SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 712-718
CHEMICAL-VAPOR-DEPOSITION OF TISI2 USING AN INDUSTRIAL INTEGRATED CLUSTER TOOL
Authors: MAURY D ROSTOLL ML GAYET P REGOLINI JL
Citation: D. Maury et al., CHEMICAL-VAPOR-DEPOSITION OF TISI2 USING AN INDUSTRIAL INTEGRATED CLUSTER TOOL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 133-137
POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE
Authors: VALLON S MONGET C JOUBERT O VALLIER L BELL FH PONS M REGOLINI JL MORIN C SAGNES I
Citation: S. Vallon et al., POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1874-1880
FURTHER STUDY ON SELECTIVE TISI2 DEPOSITION BY CVD
Authors: MAURY D GAYET P REGOLINI JL
Citation: D. Maury et al., FURTHER STUDY ON SELECTIVE TISI2 DEPOSITION BY CVD, Microelectronic engineering, 37-8(1-4), 1997, pp. 435-440
WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS
Authors: AUBRYFORTUNA V PERROSSIER JL MAMOR M MEYER F FROJDH C THUNGSTROM G PETERSSON CS BODNAR S REGOLINI JL
Citation: V. Aubryfortuna et al., WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS, Microelectronic engineering, 37-8(1-4), 1997, pp. 573-579
SINGLE-WAFER SI AND SIGE PROCESSES FOR ADVANCED ULSI TECHNOLOGIES
Authors: BODNAR S MORIN C REGOLINI JL
Citation: S. Bodnar et al., SINGLE-WAFER SI AND SIGE PROCESSES FOR ADVANCED ULSI TECHNOLOGIES, Thin solid films, 294(1-2), 1997, pp. 11-14
LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES
Authors: FINKMAN E RUCKER H MEYER F PRAWER SD BOUCHIER D BOULMER J BODNAR S REGOLINI JL
Citation: E. Finkman et al., LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES, Thin solid films, 294(1-2), 1997, pp. 118-121
FERMI-LEVEL PINNING IN SCHOTTKY DIODES ON IV-IV-SEMICONDUCTORS - EFFECT OF GE-INCORPORATION AND C-INCORPORATION
Authors: MAMOR M PERROSSIER JL AUBRYFORTUNA V MEYER F BOUCHIER D BODNAR S REGOLINI JL
Citation: M. Mamor et al., FERMI-LEVEL PINNING IN SCHOTTKY DIODES ON IV-IV-SEMICONDUCTORS - EFFECT OF GE-INCORPORATION AND C-INCORPORATION, Thin solid films, 294(1-2), 1997, pp. 141-144
INTEGRATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN A 200 MM INDUSTRIAL BICMOS TECHNOLOGY
Authors: DEBERRANGER E BODNAR S CHANTRE A KIRTSCH J MONROY A GRANIER A LAURENS M REGOLINI JL MOUIS M
Citation: E. Deberranger et al., INTEGRATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN A 200 MM INDUSTRIAL BICMOS TECHNOLOGY, Thin solid films, 294(1-2), 1997, pp. 250-253
STRUCTURAL PARTICULARITIES OF CARBON-INCORPORATED SI-GE HETEROSTRUCTURES
Authors: GUEDJ C BOUCHIER D BOUCAUD P HINCELIN G PORTIER X LHOIR A BODNAR S REGOLINI JL
Citation: C. Guedj et al., STRUCTURAL PARTICULARITIES OF CARBON-INCORPORATED SI-GE HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 286-290
SCHOTTKY-BARRIER HEIGHTS ON IV-IV COMPOUND SEMICONDUCTORS
Authors: MEYER F MAMOR M AUBRYFORTUNA V WARREN P BODNAR S DUTARTRE D REGOLINI JL
Citation: F. Meyer et al., SCHOTTKY-BARRIER HEIGHTS ON IV-IV COMPOUND SEMICONDUCTORS, Journal of electronic materials, 25(11), 1996, pp. 1748-1753
SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION
Authors: MAMOR M MEYER F BOUCHIER D VIALARET G FINKMAN E BODNAR S REGOLINI JL
Citation: M. Mamor et al., SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION, Applied surface science, 102, 1996, pp. 134-137
SELECTIVE EPITAXIAL SI BASED LAYERS AND TISI2 DEPOSITION BY INTEGRATED CHEMICAL-VAPOR-DEPOSITION
Authors: REGOLINI JL MARGAIL J BODNAR S MAURY D MORIN C
Citation: Jl. Regolini et al., SELECTIVE EPITAXIAL SI BASED LAYERS AND TISI2 DEPOSITION BY INTEGRATED CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 101, 1996, pp. 566-574
GROWTH OF SI1-X-YGEXCY MULTIQUANTUM WELLS - STRUCTURAL AND OPTICAL-PROPERTIES
Authors: BOUCAUD P GUEDJ C JULIEN FH FINKMAN E BODNAR S REGOLINI JL
Citation: P. Boucaud et al., GROWTH OF SI1-X-YGEXCY MULTIQUANTUM WELLS - STRUCTURAL AND OPTICAL-PROPERTIES, Thin solid films, 278(1-2), 1996, pp. 114-117
GROWTH OF TERNARY ALLOY SI1-X-YGEXCY BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: BODNAR S REGOLINI JL
Citation: S. Bodnar et Jl. Regolini, GROWTH OF TERNARY ALLOY SI1-X-YGEXCY BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2336-2340
OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES
Authors: BOUCAUD P GUEDJ C BOUCHIER D JULIEN FH LOURTIOZ JM BODNAR S REGOLINI JL FINKMAN E
Citation: P. Boucaud et al., OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 410-413
PHOTOLUMINESCENCE OF STRAINED SI1-YCY ALLOYS GROWN AT LOW-TEMPERATURE
Authors: BOUCAUD P FRANCIS C LARRE A JULIEN FH LOURTIOZ JM BOUCHIER D BODNAR S REGOLINI JL
Citation: P. Boucaud et al., PHOTOLUMINESCENCE OF STRAINED SI1-YCY ALLOYS GROWN AT LOW-TEMPERATURE, Applied physics letters, 66(1), 1995, pp. 70-72
STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM
Authors: REGOLINI JL BODNAR S OBERLIN JC FERRIEU F GAUNEAU M LAMBERT B BOUCAUD P
Citation: Jl. Regolini et al., STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1015-1019
BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS
Authors: BOUCAUD P FRANCIS C JULIEN FH LOURTIOZ JM BOUCHIER D BODNAR S LAMBERT B REGOLINI JL
Citation: P. Boucaud et al., BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS, Applied physics letters, 64(7), 1994, pp. 875-877
EPITAXIAL ORIENTATION OF BETA-FESI2 SI HETEROJUNCTIONS OBTAINED BY RTP CHEMICAL-VAPOR-DEPOSITION/
Authors: BERBEZIER I REGOLINI JL DANTERROCHES C
Citation: I. Berbezier et al., EPITAXIAL ORIENTATION OF BETA-FESI2 SI HETEROJUNCTIONS OBTAINED BY RTP CHEMICAL-VAPOR-DEPOSITION/, Microscopy microanalysis microstructures, 4(1), 1993, pp. 5-21
A COMPARATIVE-STUDY OF TISI2, OBTAINED BY SOLID-STATE REACTION AND CHEMICAL-VAPOR-DEPOSITION
Authors: GOUYPAILLER P HAOND M MATHIOT D GAUNEAU M PERIO A REGOLINI JL
Citation: P. Gouypailler et al., A COMPARATIVE-STUDY OF TISI2, OBTAINED BY SOLID-STATE REACTION AND CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 73, 1993, pp. 25-30
Risultati: 1-25 | 26-27