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Results:
1-25
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Results: 25
Authors:
LAFONTAINE H
ROWELL NL
JANZ S
Citation: H. Lafontaine et al., PHONON-RESOLVED PHOTOLUMINESCENCE AT LAMBDA=1.55 MU-M FROM UNDULATINGSI0.5GE0.5 EPITAXIAL LAYERS, Applied physics letters, 72(19), 1998, pp. 2430-2432
Authors:
ROWELL NL
AERS GC
LAFONTAINE H
WILLIAMS RL
Citation: Nl. Rowell et al., PHOTOLUMINESCENCE IN UHV-CVD-GROWN SI1-XGEX QUANTUM-WELLS ON SI(100) - BAND ALIGNMENT VARIATION WITH EXCITATION DENSITY AND APPLIED UNIAXIAL-STRESS, Thin solid films, 321, 1998, pp. 158-162
Authors:
DION M
HOUGHTON DC
ROWELL NL
PEROVIC DD
AERS GC
ROLFE SJ
SPROULE GI
PHILLIPS JR
Citation: M. Dion et al., STRUCTURAL CHARACTERIZATION OF A UHV CVD-GROWN SIGE HBT WITH GRADED BASE/, Thin solid films, 321, 1998, pp. 167-171
Authors:
DUFOUR PC
ROWELL NL
STEELE AG
Citation: Pc. Dufour et al., FOURIER-TRANSFORM RADIATION THERMOMETRY - MEASUREMENTS AND UNCERTAINTIES, Applied optics, 37(25), 1998, pp. 5923-5931
Authors:
GONG XY
YAMAGUCHI T
KAN H
MAKINO T
ROWELL NL
LACROIX Y
MANGYOU A
AOYAMA R
KUMAGAWA M
Citation: Xy. Gong et al., MIDINFRARED PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL INAS1-YSBY INAS MULTILAYERS/, JPN J A P 1, 36(2), 1997, pp. 738-742
Authors:
GONG XY
YAMAGUCHI T
KAN H
MAKINO T
OHSHIMO K
AOYAMA M
KUMAGAWA M
ROWELL NL
RINFRET R
Citation: Xy. Gong et al., SULFUR PASSIVATION OF INAS(SB), Applied surface science, 114, 1997, pp. 388-392
Authors:
HOUGHTON DC
AERS GC
ROWELL NL
BRUNNER K
WINTER W
EBERL K
Citation: Dc. Houghton et al., BAND ALIGNMENT IN SI1-YCY SI(001) AND SI1-XGEX/SI1-YCY/SI(001) QUANTUM-WELLS BY PHOTOLUMINESCENCE UNDER APPLIED [100] AND [110] UNIAXIAL-STRESS/, Physical review letters, 78(12), 1997, pp. 2441-2444
Authors:
LAFONTAINE H
HOUGHTON DC
ELLIOT D
ROWELL NL
BARIBEAU JM
LAFRAMBOISE S
SPROULE GI
ROLFE SJ
Citation: H. Lafontaine et al., CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN USING A COMMERCIALLY AVAILABLE ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1675-1681
Authors:
JORIO A
CARLONE C
PARENTEAU M
AKTIK C
ROWELL NL
Citation: A. Jorio et al., FORMATION OF EL2, AS(GA) AND U-BAND IN IRRADIATED GAAS - EFFECTS OF ANNEALING, Journal of applied physics, 80(3), 1996, pp. 1364-1369
Authors:
LAFONTAINE H
HOUGHTON DC
ROWELL NL
AERS GC
Citation: H. Lafontaine et al., PHOTOLUMINESCENCE STUDY OF INITIAL INTERDIFFUSION OF SIGE SI QUANTUM-WELLS GROWN BY ULTRAHIGH VACUUM-CHEMICAL VAPOR-DEPOSITION/, Applied physics letters, 69(10), 1996, pp. 1444-1446
Authors:
ROWELL NL
WANG EA
Citation: Nl. Rowell et Ea. Wang, BILAYER FREESTANDING BEAM SPLITTER FOR FOURIER-TRANSFORM INFRARED SPECTROMETRY, Applied optics, 35(16), 1996, pp. 2927-2933
MISFIT DISLOCATION INJECTION, INTERFACIAL STABILITY AND PHOTONIC PROPERTIES OF SI-GE STRAINED LAYERS
Authors:
HOUGHTON DC
BARIBEAU JM
ROWELL NL
Citation: Dc. Houghton et al., MISFIT DISLOCATION INJECTION, INTERFACIAL STABILITY AND PHOTONIC PROPERTIES OF SI-GE STRAINED LAYERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 280-291
Authors:
JORIO A
CARLONE C
ROWELL NL
HOUDAYER A
PARENTEAU M
Citation: A. Jorio et al., NATIVE DEFECTS IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AND METALLORGANIC CHEMICAL-VAPOR-DEPOSITION - EFFECTS OF IRRADIATION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 160-165
Authors:
GONG XY
KAN H
MAKINO T
YAMAGUCHI T
NAKATSKASA T
KUMAGAWA M
ROWELL NL
WANG A
RINFRET R
Citation: Xy. Gong et al., HIGH-QUALITY INAS1-YSBY INAS MULTILAYERS FOR MID-IR DETECTORS/, Crystal research and technology, 30(5), 1995, pp. 603-612
Authors:
HOUGHTON DC
AERS GC
YANG SRE
WANG E
ROWELL NL
Citation: Dc. Houghton et al., TYPE-I BAND ALIGNMENT IN SI1-XGEX SI(001) QUANTUM-WELLS - PHOTOLUMINESCENCE UNDER APPLIED [110] AND [100] UNIAXIAL-STRESS/, Physical review letters, 75(5), 1995, pp. 866-869
Authors:
NOEL JP
ROWELL NL
GREENE JE
Citation: Jp. Noel et al., PHOTOLUMINESCENCE FROM SI(001) FILMS DOPED WITH 100-1000 EV B-BEAM EPITAXY( IONS DURING DEPOSITION BY MOLECULAR), Journal of applied physics, 77(9), 1995, pp. 4623-4631
Authors:
GONG XY
KAN H
YAMAGUCHI T
SUZUKI I
AOYAMA M
KUMAGAWA M
ROWELL NL
WANG A
RINFRET R
Citation: Xy. Gong et al., OPTICAL-PROPERTIES OF HIGH-QUALITY GA1-XINXAS1-YSBY INAS GROWN BY LIQUID-PHASE EPITAXY/, JPN J A P 1, 33(4A), 1994, pp. 1740-1746
Authors:
JORIO A
WANG A
PARENTEAU M
CARLONE C
ROWELL NL
KHANNA SM
Citation: A. Jorio et al., OPTICAL-IDENTIFICATION OF THE GALLIUM VACANCY IN NEUTRON-IRRADIATED GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 50(3), 1994, pp. 1557-1566
Authors:
STEINER TW
LENCHYSHYN LC
THEWALT MLW
NOEL JP
ROWELL NL
HOUGHTON DC
Citation: Tw. Steiner et al., VISIBLE PHOTOLUMINESCENCE FROM BIEXCITONS IN SI1-XGEX QUANTUM-WELLS, Solid state communications, 89(5), 1994, pp. 429-432
Authors:
GONG XY
KAN H
YAMAGUCHI T
SUZUKI I
AOYAMA M
KUMAGAWA M
ROWELL NL
AIGUO W
RINFRET R
Citation: Xy. Gong et al., LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB INAS FOR PHOTODIODES, JPN J A P 1, 32, 1993, pp. 125-127
Authors:
NOEL JP
ROWELL NL
HOUGHTON DC
WANG A
PEROVIC DD
Citation: Jp. Noel et al., PHONON-RESOLVED AND BROAD PHOTOLUMINESCENCE IN STRAINED SI1-XGEX ALLOY MBE LAYERS, Journal of electronic materials, 22(7), 1993, pp. 739-743
Authors:
LENCHYSHYN LC
THEWALT MLW
HOUGHTON DC
NOEL JP
ROWELL NL
STURM JC
XIAO X
Citation: Lc. Lenchyshyn et al., PHOTOLUMINESCENCE MECHANISMS IN THIN SI1-XGEX QUANTUM-WELLS, Physical review. B, Condensed matter, 47(24), 1993, pp. 16655-16658
Authors:
ROWELL NL
NOEL JP
HOUGHTON DC
WANG A
LENCHYSHYN LC
THEWALT MLW
PEROVIC DD
Citation: Nl. Rowell et al., EXCITON LUMINESCENCE IN SI1-XGEX SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 74(4), 1993, pp. 2790-2805
Authors:
LU F
PERRY CH
NAMAVAR F
ROWELL NL
SOREF RA
Citation: F. Lu et al., STRAIN STUDIES OF SILICON-GERMANIUM EPILAYERS ON SILICON SUBSTRATES USING RAMAN-SPECTROSCOPY, Applied physics letters, 63(9), 1993, pp. 1243-1245
Authors:
HULSE JE
ROWELL NL
WANG A
NAMAVAR F
PERRY CH
Citation: Je. Hulse et al., SPECTROSCOPIC ELLIPSOMETRY AND PHOTOLUMINESCENCE FROM SI1-XGEX ALLOYSGROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION, Canadian journal of physics, 70(10-11), 1992, pp. 1194-1198
Risultati:
1-25
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