AAAAAA
Results: 1-25/99
Authors:
BESSOLOV VN
LEBEDEV MV
RUD VY
RUD YV
Citation: Vn. Bessolov et al., PHOTOLUMINESCENCE OF II-IV-V-2 AND I-III-VI2 CRYSTALS PASSIVATED IN ASULFIDE SOLUTION, Technical physics letters, 24(11), 1998, pp. 875-876
Authors:
BOTNARYUK VM
GORCHAK LV
RAEVSKII SD
SHERBAN DA
RUD VY
RUD YV
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF ITO P(+)-P(-)-INP SOLAR-CELLS IN LINEARLYPOLARIZED-LIGHT/, Technical physics, 43(5), 1998, pp. 546-549
Authors:
BAIRAMOV BK
POLUSHINA IK
RUD YV
RUD VY
SCHUNEMANN PG
OHMER MC
FERNELIUS NC
IRMER G
MONECKE J
Citation: Bk. Bairamov et al., OPTOELECTRONIC EFFECTS IN P-CDGEAS2 SINGLE-CRYSTALS AND STRUCTURES BASED ON THEM, Physics of the solid state, 40(2), 1998, pp. 190-194
Authors:
BODNAR IV
KUDRITSKAYA EA
POLUSHINA IK
RUD VY
RUD YV
Citation: Iv. Bodnar et al., PHYSICAL-PROPERTIES OF CUXAG1-XIN5S8 SINGLE-CRYSTALS AND RELATED SURFACE-BARRIER STRUCTURES, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 933-936
Authors:
RUD VY
RUD YV
BODNAR IV
GREMENOK VF
OBRAZTSOVA OS
SERGEEVNEKRASOV SL
Citation: Vy. Rud et al., PHOTOVOLTAIC EFFECT IN IN I-III-VI2-THIN-FILM SURFACE-BARRIER STRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 736-738
Authors:
BERDINOBATOV A
NAZAROV N
SARKISOVA VM
RUD VY
RUD YV
Citation: A. Berdinobatov et al., INDUCED PHOTOPLEOCHROISM OF P-GAALAS P-N-GAAS STRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 642-645
Authors:
RUD YV
RUD VY
BODNAR IV
GREMENOK VF
Citation: Yv. Rud et al., OPTICAL-ABSORPTION AND PHOTOSENSITIVITY OF CUINXGA1-XSE2 THIN-FILM STRUCTURES, Semiconductors, 32(4), 1998, pp. 385-388
Authors:
BODNAR IV
GREMENOK VF
RUD VY
RUD YV
Citation: Iv. Bodnar et al., PHOTOSENSITIVITY OF THIN-FILM STRUCTURES BASED ON LASER-DEPOSITED CUIN(TEXSE1-X)(2) LAYERS, Semiconductors, 32(4), 1998, pp. 409-411
Authors:
LEBEDEV AA
LEBEDEV AA
RUD YV
RUD VY
Citation: Aa. Lebedev et al., PREPARATION AND PHOTOSENSITIVITY OF HETEROSTRUCTURES BASED ON ANODIZED SILICON-CARBIDE, Semiconductors, 32(3), 1998, pp. 295-296
Authors:
LEBEDEV AA
RUD YV
RUD VY
Citation: Aa. Lebedev et al., PHOTOSENSITIVITY OF POROUS SILICON-LAYERED III-VI SEMICONDUCTORS HETEROSTRUCTURES, Semiconductors, 32(3), 1998, pp. 320-321
Authors:
AGEKYAN VF
IVANOVOMSKII VI
KNYAZEVSKII VN
RUD YV
RUD VY
Citation: Vf. Agekyan et al., OPTOELECTRONIC PHENOMENA IN GAAS AND GAP LAYERS PREPARED BY NITROGEN TREATMENT, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1075-1076
Authors:
BOTNARYUK VM
RAEVSKII SD
BELKOV VV
ZHILYAEV YV
RUD YV
FEDOROV LM
RUD VY
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF GAN GAP HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1077-1079
Authors:
BOTNARYUK VM
GORCHAK LV
DIACONU II
RUD VY
RUD YV
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF N-CDS P-INP HETEROJUNCTIONS/, Semiconductors, 32(1), 1998, pp. 61-66
Authors:
IIDA S
MAMEDOV N
RUD VY
RUD YV
Citation: S. Iida et al., PHOTOELECTRIC PROPERTIES OF STRUCTURES BASED ON TLINS2 SINGLE-CRYSTALS, Semiconductors, 32(1), 1998, pp. 67-70
Authors:
BAIRAMOV BH
RUD VY
RUD YV
Citation: Bh. Bairamov et al., PROPERTIES OF DOPANTS IN ZNGEPE(2) CDGEAS2, AGGAS2 AND AGGASE2, MRS bulletin, 23(7), 1998, pp. 41-44
Authors:
RUD VY
RUD YV
Citation: Vy. Rud et Yv. Rud, ZNGEP2 HETEROCONTACT WITH LAYERED III-VI SEMICONDUCTORS, Technical physics letters, 23(6), 1997, pp. 415-416
Authors:
KINDYAK AS
KINDYAK VV
RUD YV
Citation: As. Kindyak et al., THE VALENCE-BAND STRUCTURE IN CHALCOPYRITE CU(IN,GA)SE-2 FILMS, Semiconductors, 31(9), 1997, pp. 882-885
Authors:
BOTNARYUK VM
KOVAL AV
SIMASHKEVICH AV
SHERBAN DA
RUD VY
RUD YV
Citation: Vm. Botnaryuk et al., POLARIZATION PHOTOSENSITIVITY OF SILICON SOLAR-CELLS WITH AN ANTIREFLECTION COATING CONSISTING OF A MIXTURE OF INDIUM AND TIN OXIDES, Semiconductors, 31(7), 1997, pp. 677-680
Authors:
WALTER T
RUD VY
RUD YV
SCHOCK HW
Citation: T. Walter et al., PHOTOSENSITIVITY OF THIN-FILM ZNO CDS/CU(IN, GA)SE-2 SOLAR-CELLS/, Semiconductors, 31(7), 1997, pp. 681-685
Authors:
RUD VY
RUD YV
SHPUNT VK
Citation: Vy. Rud et al., PHOTOVOLTAIC EFFECT IN A P-TYPE CUINSE2 GREEN LEAF HETEROJUNCTION, Semiconductors, 31(2), 1997, pp. 97-99
Authors:
ASTROVA EV
LEBEDEV AA
REMENYUK AD
RUD YV
RUD VY
Citation: Ev. Astrova et al., PHOTOSENSITIVITY OF POROUS SILICON-SILICON HETEROSTRUCTURES, Semiconductors, 31(2), 1997, pp. 121-123
Authors:
BOTNARYUK VM
GORCHAK LV
PLESHKA VN
RUD VY
RUD YV
Citation: Vm. Botnaryuk et al., PHOTOSENSITIVITY OF INP CDS HETEROSTRUCTURES IN LINEARLY POLARIZED-LIGHT/, Semiconductors, 31(2), 1997, pp. 194-196
Authors:
RUD VY
RUD YV
Citation: Vy. Rud et Yv. Rud, PHOTOELECTRIC PROPERTIES OF POROUS AND SINGLE-CRYSTAL SILICON HETEROCONTACTS, Semiconductors, 31(2), 1997, pp. 197-199
Authors:
LEBEDEV AA
RUD YV
RUD VY
Citation: Aa. Lebedev et al., PHOTOLUMINESCENCE OF ANODIZED LAYERS OF CDSIAS2, Semiconductors, 31(2), 1997, pp. 200-201
Authors:
AGEKYAN VF
STEPANOV YA
LEBEDEV AA
LEBEDEV AA
RUD YV
Citation: Vf. Agekyan et al., PHOTOLUMINESCENCE OF ANODIZED SILICON-CARBIDE, Semiconductors, 31(2), 1997, pp. 202-203