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Results:
1-21
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Results: 21
Authors:
BRUNETTI R
VECCHI MC
RUDAN M
Citation: R. Brunetti et al., MONTE-CARLO ANALYSIS OF ANISOTROPY IN THE TRANSPORT RELAXATION-TIMES FOR THE HYDRODYNAMIC MODEL, VLSI design (Print), 6(1-4), 1998, pp. 161-165
Authors:
BACCARANI G
RUDAN M
LORENZINI M
SALA C
Citation: G. Baccarani et al., RECENT ADVANCES IN DEVICE SIMULATION USING STANDARD TRANSPORT MODELS, VLSI design (Print), 6(1-4), 1998, pp. 223-237
Authors:
VECCHI MC
MOHRING J
RUDAN M
Citation: Mc. Vecchi et al., AN EFFICIENT SOLUTION SCHEME FOR THE SPHERICAL-HARMONICS EXPANSION OFTHE BOLTZMANN TRANSPORT-EQUATION APPLIED TO 2-DIMENSIONAL DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 239-242
Authors:
COLALONGO L
VALDINOCI M
GNUDI A
RUDAN M
Citation: L. Colalongo et al., TRANSIENT ANALYSIS OF SILICON DEVICES USING THE HYDRODYNAMIC MODEL, VLSI design (Print), 6(1-4), 1998, pp. 283-286
Authors:
GREINER A
VECCHI MC
RUDAN M
Citation: A. Greiner et al., MODELING SURFACE-SCATTERING EFFECTS IN THE SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION BASED ON THE SPHERICAL-HARMONICS EXPANSION, Semiconductor science and technology (Print), 13(10), 1998, pp. 1080-1089
Authors:
REGGIANI S
VECCHI MC
RUDAN M
Citation: S. Reggiani et al., INVESTIGATION ON ELECTRON AND HOLE TRANSPORT-PROPERTIES USING THE FULL-BAND SPHERICAL-HARMONICS EXPANSION METHOD, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2010-2017
Authors:
COLALONGO L
VALDINOCI M
PELLEGRINI A
RUDAN M
Citation: L. Colalongo et al., DYNAMIC MODELING OF AMORPHOUS-SILICON AND POLYCRYSTALLINE-SILICON DEVICES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 826-833
Authors:
VECCHI MC
RUDAN M
Citation: Mc. Vecchi et M. Rudan, MODELING ELECTRON AND HOLE TRANSPORT WITH FULL-BAND STRUCTURE EFFECTSBY MEANS OF THE SPHERICAL-HARMONICS EXPANSION OF THE BTE, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 230-238
Authors:
VERZELLESI G
COLALONGO L
PASSERI D
MARGESIN B
RUDAN M
SONCINI G
CIAMPOLINI P
Citation: G. Verzellesi et al., NUMERICAL-ANALYSIS OF ISFET AND LAPS DEVICES, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 402-408
Authors:
VECCHI MC
MOHRING J
RUDAN M
Citation: Mc. Vecchi et al., AN EFFICIENT SOLUTION SCHEME FOR THE SPHERICAL-HARMONICS EXPANSION OFTHE BOLTZMANN TRANSPORT-EQUATION, IEEE transactions on computer-aided design of integrated circuits and systems, 16(4), 1997, pp. 353-361
Authors:
VALDINOCI M
COLALONGO L
RUDAN M
COFFA S
Citation: M. Valdinoci et al., DYNAMIC-MODEL OF SILICON DEVICES WITH ENERGY-LOCALIZED TRAP CENTERS, Microelectronics, 28(1), 1997, pp. 93-100
Authors:
PELLEGRINI A
COLALONGO L
VALDINOCI M
RUDAN M
Citation: A. Pellegrini et al., AC ANALYSIS OF AMORPHOUS-SILICON DEVICES, IEEE transactions on computer-aided design of integrated circuits and systems, 15(11), 1996, pp. 1324-1331
Authors:
RUDAN M
VECCHI MC
VONSCHWERIN A
SCHOENMAKER W
DEKEERSGIETER A
MCCARTHY K
MATHEWSON A
KLAASSEN DBM
OTTEN JAM
JONES SK
METCALFE JG
Citation: M. Rudan et al., DEVICE MODELING IN THE FRAME OF PROJECT ADEQUAT, Microelectronic engineering, 34(1), 1996, pp. 67-84
Authors:
VALDINOCI M
COLALONGO L
PELLEGRINI A
RUDAN M
Citation: M. Valdinoci et al., ANALYSIS OF CONDUCTIVITY DEGRADATION IN GOLD PLATINUM-DOPED SILICON/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2269-2275
Authors:
RUDAN M
BACCARANI G
Citation: M. Rudan et G. Baccarani, ON THE STRUCTURE AND CLOSURE-CONDITION OF THE HYDRODYNAMIC MODEL, VLSI design, 3(2), 1995, pp. 115-129
Authors:
CIAMPOLINI P
PIERANTONI A
RUDAN M
Citation: P. Ciampolini et al., A CAD ENVIRONMENT FOR THE NUMERICAL-SIMULATION OF INTEGRATED PIEZORESISTIVE TRANSDUCERS, Sensors and actuators. A, Physical, 47(1-3), 1995, pp. 618-622
Authors:
LORENZ J
HILL C
JAOUEN H
LOMBARDI C
LYDEN C
DEMEYER K
PELKA J
PONCET A
RUDAN M
SOLMI S
Citation: J. Lorenz et al., THE STORM TECHNOLOGY CAD-SYSTEM, Microelectronics, 26(2-3), 1995, pp. 113-135
Authors:
CIAMPOLINI P
ROSSI A
PIERANTONI A
RUDAN M
Citation: P. Ciampolini et al., ELECTROELASTIC SIMULATION OF A PIEZORESISTIVE PRESSURE SENSOR, Microelectronics, 26(2-3), 1995, pp. 265-272
Authors:
DEKEERSMAECKER R
DECLERCK G
FELIX P
HAOND M
HILL C
JANSSEN G
LORENZ J
MAES H
MONTREE A
NEPPL F
PATRUNO P
RUDAN M
RYSSEL H
VANDENHOVE L
VANDERVORST W
VANOMMEN A
Citation: R. Dekeersmaecker et al., THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2852-2859
Authors:
VECCHI MC
RUDAN M
SONCINI G
Citation: Mc. Vecchi et al., NUMERICAL-SIMULATION OF OPTICAL-DEVICES, IEEE transactions on computer-aided design of integrated circuits and systems, 12(10), 1993, pp. 1557-1569
Authors:
QUADE W
SCHOLL E
RUDAN M
Citation: W. Quade et al., IMPACT IONIZATION WITHIN THE HYDRODYNAMIC APPROACH TO SEMICONDUCTOR TRANSPORT, Solid-state electronics, 36(10), 1993, pp. 1493-1505
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1-21
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