AAAAAA

   
Results: 1-18 |
Results: 18
Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices
Authors: Mur, P Semeria, MN Olivier, M Papon, AM Leroux, C Reimbold, G Gentile, P Magnea, N Baron, T Clerc, R Ghibaudo, G
Citation: P. Mur et al., Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices, APPL SURF S, 175, 2001, pp. 726-733
Extraction of oxide thickness in the nanometer range using C(V) characteristics
Authors: Leroux, C Ghibaudo, G Reimbold, G Clerc, R Mathieu, S
Citation: C. Leroux et al., Extraction of oxide thickness in the nanometer range using C(V) characteristics, MICROEL ENG, 59(1-4), 2001, pp. 277-283
Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures
Authors: De Salvo, B Ghibaudo, G Luthereau, P Baron, T Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures, SOL ST ELEC, 45(8), 2001, pp. 1513-1519
Plasma charging damage mechanisms and impact on new technologies
Authors: Reimbold, G Poiroux, T
Citation: G. Reimbold et T. Poiroux, Plasma charging damage mechanisms and impact on new technologies, MICROEL REL, 41(7), 2001, pp. 959-965
Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides
Authors: Goguenheim, D Bravaix, A Ananou, B Trapes, C Mondon, F Reimbold, G
Citation: D. Goguenheim et al., Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides, J NON-CRYST, 280(1-3), 2001, pp. 78-85
A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current, SOL ST ELEC, 44(6), 2000, pp. 895-903
Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling
Authors: Clerc, R Devoivre, T Ghibaudo, G Caillat, C Guegan, G Reimbold, G Pananakakis, G
Citation: R. Clerc et al., Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling, MICROEL REL, 40(4-5), 2000, pp. 571-575
Electrical characterization of low permittivity materials for ULSI inter-metal-insulation
Authors: Cluzel, J Mondon, F Loquet, Y Morand, Y Reimbold, G
Citation: J. Cluzel et al., Electrical characterization of low permittivity materials for ULSI inter-metal-insulation, MICROEL REL, 40(4-5), 2000, pp. 675-678
Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals
Authors: De Salvo, B Luthereau, P Baron, T Ghibaudo, G Martin, F Fraboulet, D Reimbold, G Gautier, J
Citation: B. De Salvo et al., Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals, MICROEL REL, 40(4-5), 2000, pp. 863-866
A new extrapolation law for data-retention time-to-failure of nonvolatile memories
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Candelier, P Reimbold, G
Citation: B. De Salvo et al., A new extrapolation law for data-retention time-to-failure of nonvolatile memories, IEEE ELEC D, 20(5), 1999, pp. 197-199
"Reliability in VLSI Circuits: Operation, Manufacturing and Design" - June28-July 4, 1999 - Autrans, France - Preface
Authors: Boussey, J Reimbold, G
Citation: J. Boussey et G. Reimbold, "Reliability in VLSI Circuits: Operation, Manufacturing and Design" - June28-July 4, 1999 - Autrans, France - Preface, MICROEL ENG, 49(1-2), 1999, pp. 1-2
Influence of pulsed DC current stress on Electromigration results in AlCu interconnections; analysis of thermal and healing effects
Authors: Arnaud, L Reimbold, G Waltz, P
Citation: L. Arnaud et al., Influence of pulsed DC current stress on Electromigration results in AlCu interconnections; analysis of thermal and healing effects, MICROEL REL, 39(6-7), 1999, pp. 773-784
Study of Stress Induced Leakage Current by using high resolution measurements
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., Study of Stress Induced Leakage Current by using high resolution measurements, MICROEL REL, 39(6-7), 1999, pp. 797-802
ONO and NO interpoly dielectric conduction mechanisms
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G
Citation: B. De Salvo et al., ONO and NO interpoly dielectric conduction mechanisms, MICROEL REL, 39(2), 1999, pp. 235-239
Charge transport in thin interpoly nitride/oxide stacked films
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., Charge transport in thin interpoly nitride/oxide stacked films, J APPL PHYS, 86(5), 1999, pp. 2751-2758
Experimental and theoretical investigation of nonvolatile memory data-retention
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G Mondond, F Guillaumot, B Candelier, P
Citation: B. De Salvo et al., Experimental and theoretical investigation of nonvolatile memory data-retention, IEEE DEVICE, 46(7), 1999, pp. 1518-1524
Doping measurements in thin silicon-on-insulator films
Authors: Henaux, S Mondon, F Gusella, F Kling, I Reimbold, G
Citation: S. Henaux et al., Doping measurements in thin silicon-on-insulator films, J ELCHEM SO, 146(7), 1999, pp. 2737-2743
An attempt to explain thermally induced soft failures during low level ESDstresses: study of the differences between soft and hard NMOS failures
Authors: Salome, P Leroux, C Mariolle, D Lafond, D Chante, JP Crevel, P Reimbold, G
Citation: P. Salome et al., An attempt to explain thermally induced soft failures during low level ESDstresses: study of the differences between soft and hard NMOS failures, MICROEL REL, 38(11), 1998, pp. 1763-1772
Risultati: 1-18 |